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    Untitled

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM5E401PA-S •概要 ■特長 ELM5E401PA-S は低入力容量 低電圧駆動、 低 ・ Vds=-20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-0.7A ・ Rds on = 620mΩ (Vgs=-4.5V) ・ Rds(on) = 860mΩ (Vgs=-2.5V)


    Original
    ELM5E401PA-S 1450mÎ AFP1013 PDF

    AFP1013

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM5E401PA-S •General description ■Features ELM5E401PA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • ■Maximum absolute ratings Parameter Drain-source voltage


    Original
    ELM5E401PA-S ELM5E401PA-S 1450mÎ AFP1013 AFP1013 PDF

    ELM5E401PA

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM5E401PA-S •概要 ■特点 ELM5E401PA-S 是 P 沟道低输入电容,低工作电 •Vds=-20V 压,低导通电阻的大电流 MOSFET。 ·Id=-0.7A ·Rds on = 620mΩ (Vgs=-4.5V) ·Rds(on) = 860mΩ (Vgs=-2.5V) ·Rds(on) = 1450mΩ (Vgs=-1.8V)


    Original
    ELM5E401PA-S 1450mÎ AFP1013 ELM5E401PA PDF

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM5E401PA-S •General description ■Features ELM5E401PA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-0.7A Rds(on) = 620mΩ (Vgs=-4.5V) Rds(on) = 860mΩ (Vgs=-2.5V)


    Original
    ELM5E401PA-S ELM5E401PA-S 1450mÎ AFP1013 PDF