Untitled
Abstract: No abstract text available
Text: シングル P チャンネル MOSFET ELM5E401PA-S •概要 ■特長 ELM5E401PA-S は低入力容量 低電圧駆動、 低 ・ Vds=-20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-0.7A ・ Rds on = 620mΩ (Vgs=-4.5V) ・ Rds(on) = 860mΩ (Vgs=-2.5V)
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ELM5E401PA-S
1450mÎ
AFP1013
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PDF
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AFP1013
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM5E401PA-S •General description ■Features ELM5E401PA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • ■Maximum absolute ratings Parameter Drain-source voltage
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Original
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ELM5E401PA-S
ELM5E401PA-S
1450mÎ
AFP1013
AFP1013
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PDF
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ELM5E401PA
Abstract: No abstract text available
Text: 单 P 沟道 MOSFET ELM5E401PA-S •概要 ■特点 ELM5E401PA-S 是 P 沟道低输入电容，低工作电 •Vds=-20V 压，低导通电阻的大电流 MOSFET。 ·Id=-0.7A ·Rds on = 620mΩ (Vgs=-4.5V) ·Rds(on) = 860mΩ (Vgs=-2.5V) ·Rds(on) = 1450mΩ (Vgs=-1.8V)
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Original
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ELM5E401PA-S
1450mÎ
AFP1013
ELM5E401PA
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PDF
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Untitled
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM5E401PA-S •General description ■Features ELM5E401PA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-0.7A Rds(on) = 620mΩ (Vgs=-4.5V) Rds(on) = 860mΩ (Vgs=-2.5V)
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Original
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ELM5E401PA-S
ELM5E401PA-S
1450mÎ
AFP1013
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PDF
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