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    Text: Ordering number: EN659J i 2SK223 No.659J N-Channel Junction Silicon FET SAiYO High-Voltage Driver Applications Features • Ultra-high blocking voltage V gds = —80V . •Due to low gate leakage current even under high voltages, it is suitable for a wide range of


    OCR Scan     		EN659J 2SK223 20mS/VDS 2SK223 2019B 80994MT /6027KI/2275MW, PDF