Untitled
Abstract: No abstract text available
Text: Ordering number: EN659J i 2SK223 No.659J N-Channel Junction Silicon FET SAiYO High-Voltage Driver Applications Features • Ultra-high blocking voltage V gds = —80V . •Due to low gate leakage current even under high voltages, it is suitable for a wide range of
|
OCR Scan
|
EN659J
2SK223
20mS/VDS
2SK223
2019B
80994MT
/6027KI/2275MW,
|
PDF
|
2SK223
Abstract: No abstract text available
Text: | Ordering number: EN6SSJ | H 7 T c? 7 0 7 f c i 0015L>42 3 5 T F e a tu re s • U ltra-high blocking voltage Vqds = —80V . • Due to low gate leakage cu rren t even under high voltages, it is suitable for a wide range of applications (Igdl = ln A /V o s^ 50V, I d = 1mA).
|
OCR Scan
|
EN659J
2SK223
20mS/VDS
2034/2034A
SC-43
7tlt17D7b
|
PDF
|