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    EQUIVALENT FOR 30N60 Search Results

    EQUIVALENT FOR 30N60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    EQUIVALENT FOR 30N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    7N60B equivalent

    Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
    Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain


    Original     		7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2 PDF

    IXAN0063

    Abstract: IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT Mohan power electronics converters applications a transistor igbt BJT safe operating area IGBT PNP input output bjt npn transistor SCHEMATIC servo dc IGBTS
    Text: Insulated Gate Bipolar Transistor IGBT Basics Abdus Sattar, IXYS Corporation IXAN0063 1 This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs.


    Original     		IXAN0063 2001Indonesia IXAN0063 IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT Mohan power electronics converters applications a transistor igbt BJT safe operating area IGBT PNP input output bjt npn transistor SCHEMATIC servo dc IGBTS PDF

    FMV30N60S1

    Abstract: 30N60 FMV30
    Text: / FMV30N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg


    Original     		FMV30N60S1 O-220F FMV30N60S1 30N60 FMV30 PDF

    FMW30N60S1

    Abstract: FMW30N60S1HF 30N60S
    Text: / FMW30N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg


    Original     		FMW30N60S1HF O-247-P2 FMW30N60S1 FMW30N60S1HF 30N60S PDF

    FMH30N60S1

    Abstract: FMH30N60 SCHEMATIC ups 600V 20A N-Channel MOSFET TO-3P 30N60S
    Text: / FMH30N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] TO-3P 13 ± 0.2 4.5±0.2 Drain D UPS Server Telecom Power conditioner system Power supply 1.6


    Original     		FMH30N60S1 FMH30N60S1 FMH30N60 SCHEMATIC ups 600V 20A N-Channel MOSFET TO-3P 30N60S PDF

    30N60S1

    Abstract: FMP30N60S1 30N60S fuji electric lot code fuji lot code mosfet 452
    Text: / FMP30N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] +0.5 4.5±0.2 1.3±0.2 2.7 ±0.1 10 Ø3.6 6.4 ±0.2 ±0.2 UPS Server Telecom Power conditioner system


    Original     		FMP30N60S1 O-220 O-220AB 30N60S1 FMP30N60S1 30N60S fuji electric lot code fuji lot code mosfet 452 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF

    G30N60A4

    Abstract: G30N60A TIL-220 IGBT G30N60A4 TA49343 G30N60A4 transistor G30N60 HGTG30N60A4 TA49373 transistor bipolar collector current 1mA
    Text: i n t e HGTG30N60A4 r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT File N u m b er i 4829 Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    OCR Scan     		HGTG30N60A4 HGTG30N60A4 TA49343. O-247 G30N60A4 G30N60A4 G30N60A TIL-220 IGBT G30N60A4 TA49343 G30N60A4 transistor G30N60 TA49373 transistor bipolar collector current 1mA PDF

    30N60A4D

    Abstract: TA49373 30N60A4 TA49345 TA49343 hgtp30n60a4d HGTG30N60A4D TIL-220 HGTG*N60A4D la 4830 ic
    Text: i n t e HGTG30N60A4D r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    OCR Scan     		HGTG30N60A4D HGTG30N60A4D TA49343. TA49373. 30N60A4D TA49373 30N60A4 TA49345 TA49343 hgtp30n60a4d TIL-220 HGTG*N60A4D la 4830 ic PDF

    30N60A4D

    Abstract: TA49373 30N60A4 HGTG30N60A4D TA49345 ICE 280 TA49343 30N60A
    Text: HGTG30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30N60A4D TA49373 30N60A4 TA49345 ICE 280 TA49343 30N60A PDF

    30N60A4

    Abstract: 30N60A4D HGTG*N60A4D 30n60 hgtp30n60a4 hgtg30n60a4d TA49373 30N60A HGTP30N60A4D TA49345
    Text: HGTG30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30N60A4 30N60A4D HGTG*N60A4D 30n60 hgtp30n60a4 TA49373 30N60A HGTP30N60A4D TA49345 PDF

    30n60a4d

    Abstract: 30N60A4 TA49373 hgtp30n60a4 TA49343 HGTG30N60A4D LD26 TA49345 HGTG*N60A4D
    Text: HGTG30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30n60a4d 30N60A4 TA49373 hgtp30n60a4 TA49343 LD26 TA49345 HGTG*N60A4D PDF

    30N60A4D

    Abstract: No abstract text available
    Text: HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30N60A4D PDF

    30n60a4d

    Abstract: 30N60A4 TA49345 30N60A 30n60* 227 HGT1N30N60A4D LD26 TA49373 SOT227B
    Text: HGT1N30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input


    Original     		HGT1N30N60A4D HGT1N30N60A4D 150oC. 100kHz 30n60a4d 30N60A4 TA49345 30N60A 30n60* 227 LD26 TA49373 SOT227B PDF

    30N60A4D

    Abstract: mj 1504 transistor equivalent 30N60A4 HGT1N30N60A4D 30n60* 227 transistor mj 1504 transistors mj 1504 TA49373
    Text: HGT1N30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the


    Original     		HGT1N30N60A4D HGT1N30N60A4D 150oC. TA49345. 100kHz 30N60A4D mj 1504 transistor equivalent 30N60A4 30n60* 227 transistor mj 1504 transistors mj 1504 TA49373 PDF

    30n60a4d

    Abstract: mj 1504 transistor equivalent TA49345 HGT1N30N60A4D hyperfast diode reference guide TA49373 30n60* 227 30N60A4 LD26
    Text: HGT1N30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the


    Original     		HGT1N30N60A4D HGT1N30N60A4D 150oC. 100kHz 30n60a4d mj 1504 transistor equivalent TA49345 hyperfast diode reference guide TA49373 30n60* 227 30N60A4 LD26 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


    Original     		O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF