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onsemi PCG30N60A4W DIODE SCHOTTKY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PCG30N60A4W	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi HGTG30N60A4 IGBT 600V 75A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG30N60A4	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	HGTG30N60A4	Bulk			90	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi HGTG30N60A4D IGBT 600V 75A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG30N60A4D	Tube			1	1 $8.29 10 $5.651 100 $5.651 1000 $8.29 10000 $8.29	Buy Now
Newark	HGTG30N60A4D	Bulk	450		1	1 $4.85 10 $4.85 100 $4.85 1000 $4.85 10000 $4.85	Buy Now
Vishay Intertechnologies SIHG30N60AEL-GE3 EL SERIES POWER MOSFET TO247AC 120 MO @ 10V - Tape and Reel (Alt: SIHG30N60AEL-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHG30N60AEL-GE3	Reel			500	1 - 10 - 100 - 1000 $2.829 10000 $2.7048	Buy Now
Mouser Electronics	SIHG30N60AEL-GE3					1 - 10 - 100 - 1000 $3.29 10000 $3.09	Get Quote
Fairchild Semiconductor Corporation HGTG30N60A4 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	HGTG30N60A4		5			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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G30N60A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
G30N60A4 Abstract: HGTG30N60A4 IGBT G30N60A4 g30n60a smart ups 750 circuit g30n60 247A03 Text: G30N60A4 Data Sheet April 2013 600V SMPS IGBT Features The G30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high	Original	PDF	HGTG30N60A4 HGTG30N60A4 TA49343. O-247 G30N60A4 G30N60A4 IGBT G30N60A4 g30n60a smart ups 750 circuit g30n60 247A03
g30n60a4 Abstract: g30n60a IGBT G30N60A4 TA49343 G30N60A4 transistor g30n60 12V 30A diode HGTG30N60A4 TA49373 ICE 280 Text: G30N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a	Original	PDF	HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC g30n60a4 g30n60a IGBT G30N60A4 TA49343 G30N60A4 transistor g30n60 12V 30A diode TA49373 ICE 280
G30N60A4 Abstract: G30N60A G30N60 IGBT G30N60A4 TA49343 TA49373 HGTG30N60A4 G30N60A4 transistor LD26 Text: G30N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a	Original	PDF	HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC G30N60A4 G30N60A G30N60 IGBT G30N60A4 TA49343 TA49373 G30N60A4 transistor LD26
g30n60a4 Abstract: IGBT G30N60A4 G30N60A HGTG30N60A4 TA49343 G30N60A4 transistor LD26 TA49373 Text: G30N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	PDF	HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC g30n60a4 IGBT G30N60A4 G30N60A TA49343 G30N60A4 transistor LD26 TA49373
G30N60a4 Abstract: G30N60A IGBT G30N60A4 G30N60 TA49343 G30N60A4 transistor HGTG30N60A4 HGTP30N60A4D ICE 280 TA49373 Text: G30N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a	Original	PDF	HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC G30N60a4 G30N60A IGBT G30N60A4 G30N60 TA49343 G30N60A4 transistor HGTP30N60A4D ICE 280 TA49373
G30N60A4 Abstract: hgtp30n60a4 Text: G30N60A4 Data Sheet November 2013 600 V SMPS IGBT Features The G30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high	Original	PDF	HGTG30N60A4 HGTG30N60A4 TA49343. G30N60A4 hgtp30n60a4
g30n60a4 Abstract: g30n60 IGBT G30N60A4 G30N60A4 transistor G30N60A HGTG30N60A4 LD26 TA49343 TA49373 Text: G30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	PDF	HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC g30n60a4 g30n60 IGBT G30N60A4 G30N60A4 transistor G30N60A LD26 TA49343 TA49373
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	PDF	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
G30N60A4 Abstract: HGTG30N60A4 Text: G30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	PDF	HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC G30N60A4