Untitled
Abstract: No abstract text available
Text: M ITSUBISHI RF POW ER MODULE M57764 8 0 6 —8 2 5 M H z , 2 0 W , FM FOR MOBILE RADIO APPLICATION DESCRIPTION M 57764 is a thick film OUTLINE DRAWING RF power module specifically designed for 8 0 6 ~ 8 2 5 M H z , 15W FM mobile radios. 66 • 1 60 • I FEATURES
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M57764
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Untitled
Abstract: No abstract text available
Text: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for
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023SbQS
Q004312
60203-Y66
BCY66
QQ0M31Ö
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siemens dioden
Abstract: leistungstransistoren thyristor capacitive discharge ignition Leistungsdiode car ignition circuit diagram of mosfet BUZ 384 car ignition chip die npn transistor Siemens Halbleiter
Text: Technische Angaben Erläuterungen der Datenblattwerte Qualität und Zuverlässigkeit Technical Inform ation Explanation o f Data Sheet Parameters Q uality and R eliability SIEM ENS 1 Übersicht 1.1 SIPM OS-Leistungstransistoren Leistungstransistoren im Bereich 5 0 V .
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SIL00001
MILSTD-883,
siemens dioden
leistungstransistoren
thyristor capacitive discharge ignition
Leistungsdiode
car ignition circuit diagram
of mosfet BUZ 384
car ignition
chip die npn transistor
Siemens Halbleiter
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of mosfet BUZ 384
Abstract: simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn
Text: SIEMENS Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 5 0 V . 1000 V und 10 m fi . 8 Q Power transistors in the 50 V to 1000 V and 10 mQ to 8 Q range
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SIL00001
SIL00002
MILSTD-883,
of mosfet BUZ 384
simple SL 100 NPN Transistor
leistungstransistoren
ANALOG DEVICES bar code on the lable
test transistors
Siemens Dioden
fgs npn
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ci 740
Abstract: ci740 germanium transistor pnp XBI03 germanium Power Transistor Lf transistor power germanium transistor pnp Germanium common collector PNP transistor lf
Text: E D ISW A N MAZDA XBI03 L.F. T R A N S IS T O R Germanium PN P Junction Type _ T E N T A T IV E GENERAL The X B I0 3 is a germanium pnp junction type transistor suitable for use as an L.F. Amplifier The element of the transistor is hermetically sealed in a small can.
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XBI03
ci 740
ci740
germanium transistor pnp
germanium Power Transistor
Lf transistor
power germanium transistor pnp
Germanium
common collector PNP
transistor lf
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transistor B9C
Abstract: B9C transistor
Text: M ay 1998 MÉL Micro Linear ML4751 Low Current, Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4751 is a low power boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered systems. The m axim um switching frequency can exceed
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ML4751
100kHz,
transistor B9C
B9C transistor
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B3604
Abstract: No abstract text available
Text: Aprì! 1990 Edition 2.0 FUJITSU DATA SH EET '• MB3604 HIGH FREQUENCY OPERATIONAL AMPLIFIER HIGH FREQUENCY SINGLE OPERATIONAL AMPLIFIER The Fujitsu M B3604 is a m o n o lith ic high frequency operational am plifier fabricated by Fujitsu Bipolar Technology.
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MB3604
B3604
DIP-16P-M04
D-6000
PV0014-904A2
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18ph diode
Abstract: ICS08
Text: July 1996 P R E LIM IN A R Y MgLMicro Linear ML4850 Low Current Single Cell Boost Regulator with Detect GENERAL DESCRIPTION FEATURES The M L4850 is a low power boost regulator designed for low voltage D C to D C conversion in single cell battery powered systems. The m axim um switching frequency can
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ML4850
L4850
18ph diode
ICS08
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Mextram
Abstract: GP 004 DIODE 101C 220H 320H PNP TRANSISTor experiments transistor XM
Text: Paper 9.3 Experience with the New Com pact M E X T R A M M odel for Bipolar Transistors H.C. de GraafF, W.J. Kloosterman, J.A.M. Geelen and M.C.A.M. Koolen Philips Research Laboratories P.O. Box 80000 5600 JA Eindhoven, The Netherlands A bstract Here Qte and Qtc are the emitter and collector de
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ED-32,
Mextram
GP 004 DIODE
101C
220H
320H
PNP TRANSISTor experiments
transistor XM
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Untitled
Abstract: No abstract text available
Text: July 1998 Micro Linear ML4950 Adjustable Output, Low Current Single Cell Boost Regulator with Detect GENERAL DESCRIPTION FEATURES The M L4950 is a low power boost regulator designed for low voltage DC to DC conversion in single cell battery powered systems. The m axim um switching frequency can
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ML4950
L4950
100kHz,
ML4950
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L4850
Abstract: No abstract text available
Text: July 1998 % M ic ro Linear ML4850 Low Current Single Cell Boost Regulator with Detect GENERAL DESCRIPTION FEATURES The M L4850 is a low power boost regulator designed for low voltage DC to DC conversion in single cell battery powered systems. The m axim um switching frequency can
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ML4850
L4850
100kHz,
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LM391 equivalent
Abstract: lm391 IC LM391 JE182 JE722 OF LM391 550JA
Text: LM391 & National Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio pow er driver is designed to drive external pow er tra n sisto rs in 10 to 100 w att pow er am plifier designs. High pow er supply voltage operation and true high fidelity
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LM391
LM391
0W-411
LM391 equivalent
IC LM391
JE182
JE722
OF LM391
550JA
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Untitled
Abstract: No abstract text available
Text: M ay 1998 fo ri . ML4850 Low Current Single Cell Boost Regulator with Detect GENERAL DESCRIPTION FEATURES The M L4850 is a low pow er boost regulator designed for low voltage DC to DC conversion in single cell battery powered systems. The m axim um sw itchin g frequency can
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ML4850
L4850
100kHz,
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Untitled
Abstract: No abstract text available
Text: July 1996 P R E LIM IN A R Y MÉLMicro Linear ML4950 Adjustable Output, Low Current Single Cell Boost Regulator with Detect GENERAL D ESCRIPTION FEATURES The M L49 5 0 is a low pow er boost regulator designed for low voltage D C to D C conversion in single cell battery
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ML4950
L4950
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Untitled
Abstract: No abstract text available
Text: July 1996 PR E LIM IN A R Y MgLMicro Linear ML4771 High Current Boost Regulator GENERAL D ESCRIPTIO N FEATURES The M L4771 is a continuous conduction boost regulator designed for D C to D C conversion in m ultiple cell battery powered systems. Continuous conduction allo w s the
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ML4771
L4771
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Untitled
Abstract: No abstract text available
Text: MgL Micro Linear July 1996 ML4775 Adjustable Output Low Voltage Boost Regulator with Shutdown G EN ERA L D ESCRIPTIO N FEATURES The M L4775 is a boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered systems. The co m b in a tio n of BiCMOS process technology, internal
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ML4775
L4775
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X I TRANSISTOR 6 PIN
Abstract: sMT6
Text: Transistor, digitai, dual, with resistors, 6-pin package Transistor, digital, dual, with resistors, 6-pin package These ROHM packages consist of various pairs of digital transistors in a single 6-pin UMT6 UM6 or SMT6 (IMD, SC-74) package. Each package consists of two independent digital
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SC-74)
SC-70)
SC-59)
DTA124EKA
DTA144EKA
X I TRANSISTOR 6 PIN
sMT6
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3101-B
Abstract: h3101 Harris HFA3101 5 GHz Gilbert cell array csf 78-12
Text: CSF! H A R R I S W HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array November 1996 Features • Description High Gain Bandwidth Product fT .10GHz • High Power Gain Bandwidth P ro d u c t. 5GHz •
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HFA3101
HFA3101
10GHz)
10GHz
1320nm
3101-B
h3101
Harris HFA3101 5 GHz Gilbert cell array
csf 78-12
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Untitled
Abstract: No abstract text available
Text: A pril 1998 PRELIMINARY MgL Micro Linear ML4769 2 Cell, Adjustable Output Boost Regulator with Load Disconnect GENERAL DESCRIPTION FEATURES The M L4769 is a continuous conduction boost regulator designed fo r DC to DC conversion in m ultiple cell battery pow er systems. C ontinuous conduction allows the
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ML4769
L4769
200kHz,
L4769
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tag 8833
Abstract: IC LM 393 N LM 352 voltage regulator Ic 13,56 MHz RFID antenna receiver of rfid tag Bi-phase-L Coding IC LM 393 N pin details 125 kHz RFID tag antenna power supply of uv curing lamp RF inductor 13.56 MHz
Text: MCRF355 13.56 MHz Passive RFID Device with Anti-Collision Feature Features • • • • • • • • • • • • • Package Type Carrier frequency: 13.56 MHz Data modulation frequency: 70 kHz Manchester coding protocol 154 bits of user memory On-board 100 ms SLEEP timer
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MCRF355
DS21287G-page
tag 8833
IC LM 393 N
LM 352 voltage regulator Ic
13,56 MHz RFID antenna
receiver of rfid tag
Bi-phase-L Coding
IC LM 393 N pin details
125 kHz RFID tag antenna
power supply of uv curing lamp
RF inductor 13.56 MHz
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TDA1054
Abstract: TDA 1054 M tda 486 ic data TAPE RECORDER bias ac din hfe nv riaa preamplifier circuit diagram DUAL PRE-AMPLIFIER FOR TAPE RECORDER DUAL PREAMPLIFIER WITH ALC XR88C681P/28-F ALC Automatic Level Control
Text: TDA1054 LINEAR INTEGRATED CIRCUIT PRELIMINARY DATA PREAMPLIFIER FOR CASSETTE RECORDERS WITH ALC • • • • • • E X C E LLE N T V E R S A T IL IT Y in USE V s fro m 4 to 20V HIG H OPEN LOOP G AIN LOW D ISTO R TIO N LOW NOISE LAR G E A U T O M A T IC L E V E L C O N TR O L RANGE
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TDA1054
16-lead
300mV
23-Typical
TDA1054
TDA 1054 M
tda 486 ic data
TAPE RECORDER bias
ac din hfe nv
riaa preamplifier circuit diagram
DUAL PRE-AMPLIFIER FOR TAPE RECORDER
DUAL PREAMPLIFIER WITH ALC
XR88C681P/28-F
ALC Automatic Level Control
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ac cdi schematic diagram
Abstract: dc cdi schematic diagram cdi schematic cdi circuit diagram California Devices cdi schematics equivalent transistor bc 107 off grid inverter schematics cdi wiring diagram "california devices"
Text: cl o cot S '/ t ó CALIFORNIA DEVICES INC. /¿vi o^ f DLM SERIES HCMOS Gate Arrays 000935 April 1985 PRODUCT FEATURES DLM SERIES FAMILY ORGANIZATION ^ • High perform anc^ 3 ^ ^ silicon gate HC^MOSJechnology. P art N um ber ■ From 210 to 10,152 equivalent 2-input gates.
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pi880
D-6050
5M85/Printed
ac cdi schematic diagram
dc cdi schematic diagram
cdi schematic
cdi circuit diagram
California Devices
cdi schematics
equivalent transistor bc 107
off grid inverter schematics
cdi wiring diagram
"california devices"
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor FEATURES D iffused em itter ballasting resistors providing excellent cu rre n t sharing
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LLE18040X
125002/00/02/pp12
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PDF
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Manchester c source code using PIC
Abstract: rfid attendance system ask fsk psk CB10 MCRF200 MCRF355 MCRF450 RFID FSK RFID reader SOURCE CODE microchip
Text: Not recommended for new designs. Please use MCRF355 or MCRF450. MCRF200 125 kHz microID Passive RFID Device Features Package Type • Factory programming and memory serialization SQTPSM • One-time contactless programmable (developer kit only) • Read-only data transmission after programming
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MCRF355
MCRF450.
MCRF200
64-bit
DS21219J-page
Manchester c source code using PIC
rfid attendance system
ask fsk psk
CB10
MCRF200
MCRF450
RFID FSK RFID reader SOURCE CODE microchip
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