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    ERJ3GEYJ122V Price and Stock

    Panasonic Electronic Components ERJ-3GEYJ122V

    RES SMD 1.2K OHM 5% 1/10W 0603
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    DigiKey ERJ-3GEYJ122V Digi-Reel 104,220 1
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    ERJ-3GEYJ122V Cut Tape 104,220 1
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    ERJ-3GEYJ122V Reel 103,960 5,000
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    Mouser Electronics ERJ-3GEYJ122V 105,771
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    Verical ERJ-3GEYJ122V 165,000 10,000
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    ERJ-3GEYJ122V 25,990 4,099
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    Newark ERJ-3GEYJ122V Reel 50,000
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    Onlinecomponents.com ERJ-3GEYJ122V 168,670
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    Bristol Electronics ERJ-3GEYJ122V 9,300
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    TTI ERJ-3GEYJ122V Reel 50,000
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    Chip1Stop ERJ-3GEYJ122V Cut Tape 25,990
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    Component Electronics, Inc ERJ-3GEYJ122V 3,630
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    Master Electronics ERJ-3GEYJ122V 168,670
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    Ozdisan Elektronik ERJ-3GEYJ122V
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    Panasonic Electronic Components ERJ3GEYJ122V

    SMD Chip Resistor, 1.2 kOhm, ? 5%, 100 mW, 0603 [1608 Metric], Thick Film, General Purpose - Product that comes on tape, but is not reeled (Alt: 65T8565)
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    Avnet Americas ERJ3GEYJ122V Ammo Pack 17 Weeks, 1 Days 1
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    ERJ3GEYJ122V Reel 20 Weeks 50,000
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    Newark ERJ3GEYJ122V Cut Tape 4,304 1
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    Future Electronics ERJ3GEYJ122V Reel 50,000 25 Weeks 5,000
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    Bristol Electronics ERJ3GEYJ122V 16,453
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    Quest Components ERJ3GEYJ122V 48,469
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    ERJ3GEYJ122V 48,469
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    ERJ3GEYJ122V 7,216
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    ERJ3GEYJ122V 7,216
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    ERJ3GEYJ122V 5,360
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    ERJ3GEYJ122V 5,360
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    ERJ3GEYJ122V 3,948
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    ERJ3GEYJ122V 3,948
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    ERJ3GEYJ122V 3,948
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    ERJ3GEYJ122V 3,948
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    ERJ3GEYJ122V 3,660
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    ERJ3GEYJ122V 3,660
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    ERJ3GEYJ122V 3,440
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    ERJ3GEYJ122V 3,440
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    TME ERJ3GEYJ122V 4,760 1
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    Avnet Abacus ERJ3GEYJ122V Reel 26 Weeks 50,000
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    Panasonic Electronic Components ERJ-3GEYJ122V-CUT TAPE

    Resistor, Thick Film, Res 1.2 Kilohms, Pwr-Rtg 0.1 W, Tol 5%,SMT,0603,Cut Tape | Panasonic Electronic Components ERJ-3GEYJ122V-Cut Tape
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    RS ERJ-3GEYJ122V-CUT TAPE Bulk 128,690 50,000
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    Panasonic Electronic Components ERJ-3GEYJ122V-T/R

    Resistor, Thick Film, Res 1.2 Kilohms, Pwr-Rtg 0.1 W, Tol 5%,SMT,0603,Tape & Reel | Panasonic Electronic Components ERJ-3GEYJ122V-T/R
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    RS ERJ-3GEYJ122V-T/R Bulk 50,000
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    ERJ3GEYJ122V Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ERJ3GEYJ122V Panasonic RES 1.2K-OHM 5% 0.10W 200PPM THK-FILM SMD-0603 TR-7-PA Original PDF
    ERJ-3GEYJ122V Panasonic Electronic Components Resistors - Chip Resistor - Surface Mount - RES SMD 1.2K OHM 5% 1/10W 0603 Original PDF

    ERJ3GEYJ122V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PTFC262157SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157SH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum


    Original     		PDF PTFC262157SH PTFC262157SH H-34288G-4/2 c262157sh-gr1

    J103 transistor

    Abstract: transistor c223
    Text: PTFB072707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 – 768 MHz Description The PTFB072707FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced


    Original     		PDF PTFB072707FH PTFB072707FH b072707fh-gr1 J103 transistor transistor c223

    SEK4

    Abstract: No abstract text available
    Text: PTFC262808FV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with


    Original     		PDF PTFC262808FV PTFC262808FV 280-watt H-37275G-6/2 SEK4

    Untitled

    Abstract: No abstract text available
    Text: PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output


    Original     		PDF PXFC192207FH PXFC192207FH 220-watt

    RFCA8818PCK-410

    Abstract: MW-846-C-DD-75
    Text: RFCA8818 RFCA8818 Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier Package: Thermally Enhanced SOIC-8 Features  75 Push-Pull Amplifier  40MHz to 1008MHz Operation


    Original     		PDF RFCA8818 40MHz 1008MHz RFCA8818 RFCA8818PCK-410 MW-846-C-DD-75

    D2061 transistor

    Abstract: B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064
    Text: ORDER NO. MD0604120A3 DVD Stereo System SA-VK650GCP Colour S . Silver Type Please use this manual together with the service manual for Model No. [SA-VK650GC/GN/GS/GCS/GCT-S, Order No. MD0604118C3]. Specifications n SYSTEM SC-VK650(GCP) Notes: Music Center: SA-VK650 (GCP)


    Original     		PDF MD0604120A3 SA-VK650GCP SA-VK650GC/GN/GS/GCS/GCT-S, MD0604118C3] SC-VK650 SA-VK650 SB-VK650 SB-WVK650 0A072 F2G0J470A031 D2061 transistor B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064

    Untitled

    Abstract: No abstract text available
    Text: RFCA8818 RFCA8818 Dual CATV 40MHz to 1008MHz High Linearity, low Noise GaAs Amplifier DUAL CATV 40MHz TO 1008MHz HIGH LINEARITY, LOW NOISE GaAs AMPLIFIER Package: Thermally Enhanced SOIC-8 Features  75 Push-Pull Amplifier  40MHz to 1008MHz Operation


    Original     		PDF RFCA8818 40MHz 1008MHz 1008MHz RFCA8818

    Untitled

    Abstract: No abstract text available
    Text: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced


    Original     		PDF PTVA123501EC PTVA123501FC PTVA123501EC PTVA123501FC H-36248-2 H-37248-2

    Untitled

    Abstract: No abstract text available
    Text: PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum


    Original     		PDF PTFC262157FH PTFC262157FH H-34288G-4/2 c262157sh-gr1 48stances.

    SMD Transistors w27

    Abstract: p416 diode on semiconductor SMD Transistors w26
    Text: User's Guide SLAU280A – March 2009 – Revised October 2012 TLV320AIC36EVM-K This user's guide describes the characteristics, operation, and use of the TLV320AIC36EVM-K. This evaluation module EVM features a complete stereo audio codec with several inputs and outputs,


    Original     		PDF SLAU280A TLV320AIC36EVM-K TLV320AIC36EVM-K. TLV320AIC36 SBAS387 TAS1020B SLES025 TPS767D318 SLVS209 SN74LVC125A SMD Transistors w27 p416 diode on semiconductor SMD Transistors w26

    HDR1X4

    Abstract: HDR 1X4 ERJ-3GEY0R00V RFCA8818
    Text: RFCA8818 RFCA8818 Dual CATV 40MHz to 1008MHz High Linearity, low Noise GaAs Amplifier DUAL CATV 40MHz TO 1008MHz HIGH LINEARITY, LOW NOISE GaAs AMPLIFIER Package: Thermally Enhanced SOIC-8 Features  75 Push-Pull Amplifier  40MHz to 1008MHz Operation


    Original     		PDF RFCA8818 40MHz 1008MHz RFCA8818 HDR1X4 HDR 1X4 ERJ-3GEY0R00V

    Untitled

    Abstract: No abstract text available
    Text: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced


    Original     		PDF PTVA123501EC PTVA123501FC PTVA123501EC PTVA123501FC H-36248-2 H-37248-2

    ATC100B4R3CW500X

    Abstract: PTVA035002EV V1
    Text: PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down


    Original     		PDF PTVA035002EV PTVA035002EV a035002 ATC100B4R3CW500X PTVA035002EV V1

    schematic diagram UPS 600 Power tree

    Abstract: SMD Transistors w27 schematic diagram UPS numeric digital 600 plus H9TP17 schematic diagram UPS power tree 600 schematic diagram Power Tree UPS 600 SMD Transistors w26 DIODE SMD W12 75 electret mic panasonic w31 smd
    Text: User's Guide SLAU280 – March 2009 TLV320AIC36EVM-K This user's guide describes the characteristics, operation, and use of the TLV320AIC36EVM-K. This evaluation module EVM features a complete stereo audio codec with several inputs and outputs, extensive audio routing, mixing, and effects capabilities. A complete circuit description, schematic


    Original     		PDF SLAU280 TLV320AIC36EVM-K TLV320AIC36EVM-K. TLV320AIC36 TAS1020B TPS767D318 SN74LVC125A SN74LVC1G125 SN74LVC1G07 SBAS387 schematic diagram UPS 600 Power tree SMD Transistors w27 schematic diagram UPS numeric digital 600 plus H9TP17 schematic diagram UPS power tree 600 schematic diagram Power Tree UPS 600 SMD Transistors w26 DIODE SMD W12 75 electret mic panasonic w31 smd

    power tr unit j122 5 pin

    Abstract: power tr unit j122 PTVA120251EA lm7805 3A A 4562 L 4440 J233 AG J56-1
    Text: PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with


    Original     		PDF PTVA120251EA PTVA120251EA H-36265-2 power tr unit j122 5 pin power tr unit j122 lm7805 3A A 4562 L 4440 J233 AG J56-1

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.


    Original     		PDF PTFB183408SV PTFB183408SV 340-watt

    4871I

    Abstract: No abstract text available
    Text: PTFB213208SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB213208SV PTFB213208SV 320-watt H-37275G-6/2 4871I

    PTFB092707FH

    Abstract: No abstract text available
    Text: PTFB092707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 925 – 960 MHz Description The PTFB092707FH is a 270-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.


    Original     		PDF PTFB092707FH PTFB092707FH 270-watt H-37288L-4/2

    Untitled

    Abstract: No abstract text available
    Text: PTVA120501EA Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz Description The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down


    Original     		PDF PTVA120501EA PTVA120501EA H-36265-2 1400MHz,

    PTFC262808SV

    Abstract: No abstract text available
    Text: PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808SV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with


    Original     		PDF PTFC262808SV PTFC262808SV 280-watt

    coilcraft 0805LS-102XJLC

    Abstract: ERJ-3GEY0R00V ERJ3GEYJ122V RFCA8818PCK-410 MW-846-C-DD-75 grm188r61a105ka61d
    Text: RFCA8818 RFCA8818 Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier Package: Thermally Enhanced SOIC-8 Features  75 Push-Pull Amplifier  40MHz to 1008MHz Operation


    Original     		PDF RFCA8818 40MHz 1008MHz RFCA8818 coilcraft 0805LS-102XJLC ERJ-3GEY0R00V ERJ3GEYJ122V RFCA8818PCK-410 MW-846-C-DD-75 grm188r61a105ka61d

    br cornell dubilier

    Abstract: No abstract text available
    Text: PTVA104501EH Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz Description The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down


    Original     		PDF PTVA104501EH PTVA104501EH H-33288-2 br cornell dubilier

    Untitled

    Abstract: No abstract text available
    Text: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced


    Original     		PDF PTVA123501EC PTVA123501FC PTVA123501EC PTVA123501FC H-36248-2 H-37248-2

    Untitled

    Abstract: No abstract text available
    Text: PTFC262808FV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with


    Original     		PDF PTFC262808FV PTFC262808FV 280-watt H-37275G-6/2