SCHOTTKY 20A 40V
Abstract: JEDEC wave
Text: ESAC63-004 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10+0.5 4.5±0.2 3.7±0.2 15±0.2 6.4±0.2 2.7±0.1 Ø3.6±0.2 14 -0.5 1.2 0.4 0.8 2.7 2.54 5.08 Features Low VF JEDEC TO-220AB EIAJ SC-46 Super high speed switching Connection diagram
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ESAC63-004
O-220AB
SC-46
500ns,
SCHOTTKY 20A 40V
JEDEC wave
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SCHOTTKY 20A 60V TO-220AB
Abstract: No abstract text available
Text: ESAC63-006 20A (60V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10+0.5 4.5±0.2 3.7±0.2 15±0.2 6.4±0.2 2.7±0.1 Ø3.6±0.2 1 14 -0.5 1.2 0.4 3 2 0.8 2.7 2.54 5.08 Features Low VF JEDEC TO-220AB EIAJ SC-46 Super high speed switching Connection diagram
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Original
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PDF
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ESAC63-006
O-220AB
SC-46
500ns,
SCHOTTKY 20A 60V TO-220AB
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fuji 004
Abstract: ESAC63-004R
Text: http://www.fujisemi.com ESAC63-004R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Conditions Ratings Units 48 V 45 V Repetitive peak surge reverse voltage VRSM Repetitive peak reverse voltage
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ESAC63-004R
500ns,
fuji 004
ESAC63-004R
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SCHOTTKY 20A 40V
Abstract: ESAC63M-004 ESAC63m ESAC63M004
Text: ESAC63M-004 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10.5 Max. 4.5Max. Ø3.2+0.2 -0.1 6.0 Min. 3.7 17.0 ±0.3 4.7 2.0 13.0 1.2 0.4 0.8 2.7 2.54 5.08 Features JEDEC Insulated package by fully molding Low VF EIAJ Super high speed switching
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ESAC63M-004
SC-67
500ns,
SCHOTTKY 20A 40V
ESAC63M-004
ESAC63m
ESAC63M004
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SCHOTTKY 20A 40V
Abstract: ESAC63-004 esaC63
Text: ESAC63-004 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10+0.5 4.5±0.2 3.7±0.2 15±0.2 6.4±0.2 2.7±0.1 Ø3.6±0.2 14 -0.5 1.2 0.4 0.8 2.7 2.54 5.08 Features Low VF JEDEC TO-220AB EIAJ SC-46 Super high speed switching Connection diagram
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Original
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PDF
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ESAC63-004
O-220AB
SC-46
500ns,
SCHOTTKY 20A 40V
ESAC63-004
esaC63
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JEDEC wave
Abstract: No abstract text available
Text: ESAC63-004 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10+0.5 4.5±0.2 3.7±0.2 15±0.2 6.4±0.2 2.7±0.1 Ø3.6±0.2 14 -0.5 1.2 0.4 0.8 2.7 2.54 5.08 Features Low VF JEDEC TO-220AB EIAJ SC-46 Super high speed switching Connection diagram
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Original
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PDF
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ESAC63-004
O-220AB
SC-46
500ns,
150se
JEDEC wave
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Untitled
Abstract: No abstract text available
Text: ESAC63-004 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10+0.5 4.5±0.2 3.7±0.2 15±0.2 6.4±0.2 2.7±0.1 Ø3.6±0.2 14 -0.5 1.2 0.4 0.8 2.7 2.54 5.08 Features Low VF JEDEC TO-220AB EIAJ SC-46 Super high speed switching Connection diagram
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Original
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PDF
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ESAC63-004
O-220AB
SC-46
500ns,
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schottky diode 60V 80A
Abstract: ESAC63-006
Text: ESAC63-006 20A (60V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10+0.5 4.5±0.2 3.7±0.2 15±0.2 6.4±0.2 2.7±0.1 Ø3.6±0.2 1 14 -0.5 1.2 0.4 3 2 0.8 2.7 2.54 5.08 Features Low VF JEDEC TO-220AB EIAJ SC-46 Super high speed switching Connection diagram
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Original
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PDF
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ESAC63-006
O-220AB
SC-46
500ns,
schottky diode 60V 80A
ESAC63-006
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ESAC63
Abstract: No abstract text available
Text: http://www.fujisemi.com ESAC63-006R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Repetitive peak reverse voltage Average output current Non-repetitive forward surge current*
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ESAC63-006R
ESAC63
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Untitled
Abstract: No abstract text available
Text: ESAC63-004 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10+0.5 4.5±0.2 3.7±0.2 15±0.2 6.4±0.2 2.7±0.1 Ø3.6±0.2 14 -0.5 1.2 0.4 0.8 2.7 2.54 5.08 Features Low VF JEDEC TO-220AB EIAJ SC-46 Super high speed switching Connection diagram
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Original
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PDF
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ESAC63-004
O-220AB
SC-46
500ns,
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ESAC63-006
Abstract: No abstract text available
Text: ESAC63-006 20A (60V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10+0.5 4.5±0.2 3.7±0.2 15±0.2 6.4±0.2 2.7±0.1 Ø3.6±0.2 1 14 -0.5 1.2 0.4 3 2 0.8 2.7 2.54 5.08 Features Low VF JEDEC TO-220AB EIAJ SC-46 Super high speed switching Connection diagram
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ESAC63-006
O-220AB
SC-46
500ns,
ESAC63-006
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SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14
SMD Transistors w04 sot-23
transistor SOT-23 w04
SB050 transistor
IN4728A
mosfet SMD w04
SN30SC4
smd diode code gs1m
W01 SMD mosfet
W04 sot 23
1s355
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ESAC63-006R
Abstract: 11820a esac6
Text: DATE DRAWN JAN.-25-‘ 07 CHECKED JAN.-25-‘ 07 CHECKED JAN.-25-‘ 07 NAME APPROVED DWG.NO. T h i s m a t er i a l a n d t h e in f or m at i o n h e r ei n i s th e pr o pe r ty o f Fuji Electric D e v i c e Te c h n o lo g y C o . , L td . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
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ESAC63-006R
MS5D3019
MS5D3019
H04-004-03a
ESAC63-006R
11820a
esac6
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5CE120C
5KE120CA
5CE120CA
5CE12A
5KE12A
5CE12C
5KE12CA
5CE12CA
CAT7105CA
mp1410es
G547E2
G547H2
G547F2
P5504EDG equivalent
G547I1
SP8K10
SP8K10SFD5TB
LD1117Al
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DIODE Z54
Abstract: ESAC63M004
Text: ESAC63M -004 2 oa : Outline Drawings pa“ * SCHOTTKY B A R R IE R DIODE «12Í8-.Í 4.5” IT lii a • t t f t : Features M “3 Lae. Z54 Z54 JED EC Insulated package by fully molding. EIA J SC-67 • i£\A m m & fà Low V k Connection Diagram Super high speed switching.
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ESAC63M
SC-67
538B-7680
DIODE Z54
ESAC63M004
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ESAC63-004
Abstract: A478
Text: ESAC63-004 2 oa : O utline Drawings >a - y h * - '< V 7 m — F SCHOTTKY BARRIER DIODE 03.6 *o ? 4.5 ’Ü I .32 5 08 : Features •1 & V F Low Vp JEDEC T0-220AB EIAJ SC-46 • T.'tvT's'fae-K^nti-asi' Super high speed switching. m m & m Connection Diagram
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PDF
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ESAC63-004
O-220AB
SC-46
500ns,
A478
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ESAC63-004
Abstract: V125
Text: ESAC63-004 2 oa I > 3 ' O u tlin e D r a w in g s SCHOTTKY BARRIER DIODE : F e a tu re s • i&Vr Low VF Super high speed sw itching. High reliability by planer design. : A p p lic a tio n s High speed power switching. M a x im u m R a tin g s a n d C h a ra c te ris tic s
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OCR Scan
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PDF
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ESAC63-004
220AB
SC-46
500ns,
V125
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ESAC63-004
Abstract: Collmer Semiconductor
Text: ESAC63-004 20A I Outline Drawing scHOTTKY b a r r i e r d io d e Connection Diagram I Features Low V f Super high speed switching High reliability by planer design I Applications High speed power switching • Maximum Ratings & Characteristics • Absolute Maximum Ratings
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PDF
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ESAC63-004
O-220
500ns,
22387T5
ESAC63-004
Collmer Semiconductor
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K1214
Abstract: AC63 ESAC63M-004 T151 T930 ESAC63M004
Text: ESAC63 M - 4 I A 2 0 : Outline Drawings K % > b IQ^MAX. SCHOTTKY BARRIER DIODE 03^ ±8;^ 4.5" J T M ffi-ik : Features 154, 1,03 1 2.54 0-4r| P-7 JED E C Insulated package by fully m olding. EIA J SC-67 • 1fcVF • « m m * Connection Diagram Low V k Super high speed switching.
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PDF
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ESAC63M-004
500ns,
I95t/R89
Shl50
K1214
AC63
T151
T930
ESAC63M004
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BK 300 MI
Abstract: WTVA KO-48 ESAC63-004 H125
Text: ESAC63-004 2 oa i'a y h ï- 'O J T m — K SC H O T T K Y B A R R IER DIODE m n & : Features • f&vF Low Vp Super high speed switching. m m & n Connection Diagram High reliability by planer design, : Applications High speed power switching. M aximum Ratings and Characteristics
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OCR Scan
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PDF
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O-22QAB
SC-46
500ns,
BK 300 MI
WTVA
KO-48
ESAC63-004
H125
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SE024
Abstract: ERB12 ESAD81-004 se014 ERA1506 ERB30 ESAB82M-006 esac6 ERD03-04 SE036
Text: COLLMER SEMICONDUCTOR INC MÖE D me, dddisôi Schottky/General Purpose Diodes " P ICOL <S o \ ~ \ J > Schottky “Quick Reference” Selection Guide PACKAGE SURFACE MOUNT S I N G L E AXIAL TO-220 TO-3P F-PACK Full Mold Package PACKAGE SURFACE MOUNT D U A
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SE014
SE036
SE059
SC802-04
SC802-06
SC802-09
ERA82-004
ERA83-006
ERA85-009
ERA83-004
SE024
ERB12
ESAD81-004
ERA1506
ERB30
ESAB82M-006
esac6
ERD03-04
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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AC63
Abstract: ESAC63M-004 ESAC63M004
Text: E S A C 6 3 M -0 0 4 2 oa k Outline Drawings SCHOTTKY BARRIER DIODE I Features Insulated package by fully m o ld in g . • 1fcVF mm&m Connection Diagram Low Vk Super high speed sw itchin g. • -j u- i — ma High reliability by planer design. : Applications
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PDF
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ESAC63M-004
500ns,
AC63
ESAC63M004
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ESAB82-004
Abstract: ESAB82M-004 ESAB82M-006 ESAB85-009 KP823C04 KS823C04 TP801C04 TP801C06 YG801C04 YG801C06
Text: Schottky-Barrier Diodes Dual package Ratings and characteristics Type M axim um ratin§ V lo rrm Volts KS823C04 40 KP823C04 40 40 If s h # 2 *1 Am ps. Am ps. 5.0 Tc=87°C 5.0 Tc=87°C) 5.0 Tc=103°C) Therm al rating Tj and Tstg °c -40 t o +125 Characteristics Ta=25°C)
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KS823C04
KP823C04
TP801C04
TP801C06
ESAB82-004
ESAB82M-004
ESAB82M-006
O-220
O-22QAB
O-22QF17
ESAB85-009
YG801C04
YG801C06
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