FHX35
Abstract: eudyna FHX35LG hemt low noise die fujitsu gaas fet
Text: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.
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FHX35X/002
FHX35LG/002
FHX35X/002
FHX35LG/002
Co4888
FHX35
eudyna
FHX35LG
hemt low noise die
fujitsu gaas fet
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EUDYNA
Abstract: FSX017X/001 FSX017X
Text: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high
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FSX017LG/001
FSX017X/001
FSX017/001
FSX017LG/001
RATINGS4888
EUDYNA
FSX017X/001
FSX017X
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sumitomo connectors
Abstract: opnext Edd 44 OC-768 JP3407400005
Text: Leading Optical Device Manufacturers Release Common Specifications for 40 Gbit/s Solutions Based on XLMD Optical Device Multi-Source Agreement Multi-Source Agreement Enables Multiple Vendors to Produce 40 Gbit/s Optical Devices Based on a Unified Standard
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fujitsu hemt
Abstract: No abstract text available
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
fujitsu hemt
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Untitled
Abstract: No abstract text available
Text: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX027X
FSX027X
12GHz.
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FSX017X
Abstract: No abstract text available
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
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Eudyna Devices
Abstract: VIP 22 A FB113 ECM-A0
Text: ES/EMY1401VI Preliminary Data Sheet Rev1.2 July,2005 ES/EMY1401VI 11.3 Gb/s LN Modulator Driver IC 1. Features 1 2) 3) 4) 5) 6) Operation up to 11.3 Gb/s Internal Input 50 ohm Termination Output Voltage Swing: 5.0V 50ohm Load) Power Supply Voltage : -5.20V
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ES/EMY1401VI
ES/EMY1401VI
50ohm
16-pin
ECM-A00-197
Eudyna Devices
VIP 22 A
FB113
ECM-A0
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emy14
Abstract: No abstract text available
Text: EMY1441HI Datasheet Rev1.1 J anuary,2006 EMY1441HI 11.3 Gb/s Direct Modulation Driver IC for +3.3V Supplied Voltage 1. Abstr act 1 2) 3) 4) 5) 6) 7) 8) Operation speed over 11.3Gb/s Output Modulation Current:60mA typ.,25ohm Load) Power Supply Voltage : +3.3V
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EMY1441HI
EMY1441HI
25ohm
24-pin
1906B,
ECM-A00-218
emy14
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ECM-A00
Abstract: No abstract text available
Text: ES/EMY1421HI Preliminary Datasheet Rev1.1 J une, 2006 ES/EMY1421HI 11.3 Gb/s EA Modulator Driver IC for +3.3V Supplied Voltage 1. Abstr act 1 2) 3) 4) 5) 6) Operation speed over 11.3Gb/s Output Amplitude: 1.4Vpp - 3.0Vpp typ.,50ohm Load) Cross Point Adjustable: 40% -85%
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ES/EMY1421HI
ES/EMY1421HI
50ohm
24-pin
ECM-A00-226
ECM-A00
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EUDYNA
Abstract: LN Modulator Driver Eudyna Devices FMM3117VN EUDYNA CROSS
Text: FMM3117VN Datasheet Rev. B2 April, 2004 FMM3117VN 12.5Gbps Dual-drive LN Modulator Driver IC 1. Features 1 2) 3) 4) 5) 6) 7) 8) High Speed Operation up to 12.5Gbps On-chip 50 ohm Termination for High Speed Data Input Rapid Rise/Fall Time : 25ps Typ., 20-80%)
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FMM3117VN
FMM3117VN
85Vpp
50ohm
32-pin
EUDYNA
LN Modulator Driver
Eudyna Devices
EUDYNA CROSS
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Filtronic
Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15
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FPD3000
FPD2250
FPD1500
FPD1050
FPD750
FPD6836
FPD200
FPD7612
EPA240B
EPA160B
Filtronic
EUDYNA
fpd6836
epa018a
FPD750
ph15 transistor
FLC087XP
FPD3000
FPD7612
FPD1500
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Eudyna Devices
Abstract: EMM5206LP microwave sensor RO4003C k band oscillator 2329500 JESD22-A114-C EUDYNA Eudyna high power Canton AS 100 SC
Text: EMM5206LP K Band Oscillator MMIC FEATURES ・ High Output Power : Pout =5 dBm @ Vdd = 4 V typ. ・ Low Power Consumption : Idd = 20 mA @ Vdd = 4 V (typ.) ・ Low Phase Noise : n = -100 dBc/Hz @ 100 kHz offset, fosc = 24 GHz ・ Low Spurious Level : RJ2nd < -40 dBc
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EMM5206LP
EMM5206LP
1906B,
Eudyna Devices
microwave sensor
RO4003C
k band oscillator
2329500
JESD22-A114-C
EUDYNA
Eudyna high power
Canton AS 100 SC
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Untitled
Abstract: No abstract text available
Text: ELM5964 ELM5964-16F C-Band Band Internally Matched FET FEATURES High Output Power: P1dB=42.5dBm 42.5dBm Typ ( High Gain: G1dB=10.0dB (Typ.) High PAE: add=40 %( Typ.) Frequency Band: 5.9~6.4GHz Impedance Matched Zin/Zout = 50 50
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ELM5964
ELM5964-16F
ELM5964-16F
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EUDYNA
Abstract: ecm-a00-213 FLD5F20NP FMM3116VN FMM3117VN 10 gb laser diode EAM laser ECM-A00 laser weapon
Text: FMM3116VN Data Sheet Rev. 1.0 December, 2005 FMM3116VN 12.5Gb/s Electro Absorption Modulator Driver IC 1. Features High Speed Operation up to 12.5Gb/s 2 On-chip 50 ohm Termination for High Speed Data Input 3) Rapid Rise/Fall Time : 25ps Typ., 20-80%) 4) Adjustable Output Voltage Swing : 1.5VPP to 2.5VPP (50ohm Load)
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FMM3116VN
FMM3116VN
50ohm
32-pin
FMM3117VN
85VPP
1906B,
ECM-A00-213
EUDYNA
ecm-a00-213
FLD5F20NP
FMM3117VN
10 gb laser diode
EAM laser
ECM-A00
laser weapon
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mmic n1
Abstract: No abstract text available
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the
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FMM5701X
24GHz
24GHz
18-28GHz
FMM5701X
18-28GHz
mmic n1
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Untitled
Abstract: No abstract text available
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the
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FMM5701X
24GHz
24GHz
18-28GHz
FMM5701X
18-28GHz
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Eudyna Devices
Abstract: Doppler Sensor K-band DOPPLER 24ghz k band oscillator doppler sensor mmic case styles EMM5206LP EUDYNA Canton AS 100 SC RM1101
Text: EMM5206LP K Band Oscillator MMIC FEATURES ・High Output Power : Pout=5dBm @Vdd=4V typ. ・Low Power Consumption : Idd=20mA @Vdd=4V (typ.) ・Low Phase Noise : Φn=-100dBc/Hz @100KHz offset, fosc=24GHz ・Low Spurious Level : RJ2nd<-40dBc ・High Reliability, High Breakdown Voltage : Vgdo=20V, Igdo=160uA
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EMM5206LP
-100dBc/Hz
100KHz
24GHz
-40dBc
160uA
ES/EMM5206LP
Eudyna Devices
Doppler Sensor K-band
DOPPLER 24ghz
k band oscillator
doppler sensor
mmic case styles
EMM5206LP
EUDYNA
Canton AS 100 SC
RM1101
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EUDYNA
Abstract: ka-band mixer fmm5117 A114 es JESD22-A114-C RO4003
Text: ES/FMM5117YE K,Ka-Band Down-Converter MMIC FEATURES •High Conversion Gain, Gc = -11 dB Typ. •High Linearity •Broad RF Frequency Band ; 20 - 30 GHz •SMT Laminate Package (YE Package) •Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5117YE is a double, single balanced diode mixer downconverter MMIC. The device consists of a low noise mixer, LO
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ES/FMM5117YE
FMM5117YE
EUDYNA
ka-band mixer
fmm5117
A114 es
JESD22-A114-C
RO4003
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FMM5048
Abstract: FMM5048GJ EUDYNA 1425GHz Eudyna Devices power amplifiers ku vsat amplifier Eudyna Devices Fmm5048GJ
Text: FMM5048GJ VSAT MMIC FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION
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FMM5048GJ
FMM5048GJ
Vo4888
FMM5048
EUDYNA
1425GHz
Eudyna Devices power amplifiers
ku vsat amplifier
Eudyna Devices Fmm5048GJ
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ka-band mixer
Abstract: A114 es FMM5116YE JESD22-A114-C RO4003 Ka-band
Text: ES/FMM5116YE K,Ka-Band Up-Converter MMIC FEATURES •High Conversion Gain, Gc = -11 dB Typ. •High Linearity •Broad RF Frequency Band ; 20 - 30 GHz •SMT Laminate Package (YE Package) •Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5116YE is a double, single balanced diode mixer upconverter MMIC. The device consists of a low noise mixer, LO
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ES/FMM5116YE
FMM5116YE
ka-band mixer
A114 es
JESD22-A114-C
RO4003
Ka-band
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FMM5701X
Abstract: EUDYNA eudyna an
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the
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FMM5701X
24GHz
24GHz
18-28GHz
FMM5701X
18-28GHz
EUDYNA
eudyna an
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Eudyna Devices
Abstract: fmm106
Text: FMM1061VJ GaAs MMIC FEATURES • Operation to 6.0 GHz • Input Frequency divide by 4, OUT and OUT • -5V or+5V DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available
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FMM1061VJ
SMT-10
FMM1061VJ
Eudyna Devices
fmm106
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Untitled
Abstract: No abstract text available
Text: 1,550nm Modulator Integrated DFB Laser FLD5F10NP-A FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection
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550nm
FLD5F10NP-A
100ps/nm)
10Gb/s.
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C-Band Power GaAs FET
Abstract: No abstract text available
Text: FLC257MH-6 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH-6 is a power GaAs FET that is designed for general
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FLC257MH-6
FLC257MH-6
C-Band Power GaAs FET
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