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    F10N Search Results

    F10N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R5F10NLEDFB#55 Renesas Electronics Corporation Ultra-low Power Microcontrollers for High-end Smart Electricity Meter Market Visit Renesas Electronics Corporation
    R5F10NMJDFB#35 Renesas Electronics Corporation Ultra-low Power Microcontrollers for High-end Smart Electricity Meter Market Visit Renesas Electronics Corporation
    R5F10NPGDFB#35 Renesas Electronics Corporation Ultra-low Power Microcontrollers for High-end Smart Electricity Meter Market Visit Renesas Electronics Corporation
    R5F10NLEDFB#15 Renesas Electronics Corporation Ultra-low Power Microcontrollers for High-end Smart Electricity Meter Market Visit Renesas Electronics Corporation
    R5F10NPGDFB#15 Renesas Electronics Corporation Ultra-low Power Microcontrollers for High-end Smart Electricity Meter Market Visit Renesas Electronics Corporation
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    F10N Price and Stock

    Central Technologies CT0402CSF-10NG

    SMD CER CORE WIRE-WOUND INDUCTOR
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    DigiKey CT0402CSF-10NG Reel 4,300 1
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    Central Technologies CTLL1608F-10NJ

    10NH SMD CER CORE MULT INDUCTOR
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    DigiKey CTLL1608F-10NJ Reel 3,950 1
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    Same Sky PTN15-F10NB20

    TRIMMER 10K OHM 0.2W PC PIN TOP
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    DigiKey PTN15-F10NB20 Bag 2,000 1
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    Mouser Electronics PTN15-F10NB20 1,998
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    Tai-Tech Advanced Electronics Co Ltd SNL322522QF-10NJ

    FIXED IND 10NH 450MA 130MOHM SMD
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    DigiKey SNL322522QF-10NJ Reel 2,000 2,000
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    SNL322522QF-10NJ Cut Tape 2,000 1
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    SNL322522QF-10NJ Digi-Reel 2,000 1
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    Toshiba America Electronic Components TK60F10N1L,LXGQ

    MOSFET N-CH 100V 60A TO220SM
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    DigiKey TK60F10N1L,LXGQ Digi-Reel 1,750 1
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    TK60F10N1L,LXGQ Cut Tape 1,750 1
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    TK60F10N1L,LXGQ Reel 1,000 1,000
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    Find more F10N price and stock on Findchips.com

    F10N Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    F10-NC1006 Semitronics Dataline Protection - Transient Voltage Suppressor - 100A Peak Pulse Current Scan PDF
    F10-NC1012 Semitronics Dataline Protection - Transient Voltage Suppressor - 100A Peak Pulse Current Scan PDF
    F10-NC1022 Semitronics Dataline Protection - Transient Voltage Suppressor - 100A Peak Pulse Current Scan PDF
    F10-NC1039 Semitronics Dataline Protection - Transient Voltage Suppressor - 100A Peak Pulse Current Scan PDF
    F10-NL1006 Semitronics Dataline Protection - Transient Voltage Suppressor - 100A Peak Pulse Current Scan PDF
    F10-NL1012 Semitronics Dataline Protection - Transient Voltage Suppressor - 100A Peak Pulse Current Scan PDF
    F10-NL1022 Semitronics Dataline Protection - Transient Voltage Suppressor - 100A Peak Pulse Current Scan PDF
    F10-NL1039 Semitronics Dataline Protection - Transient Voltage Suppressor - 100A Peak Pulse Current Scan PDF

    F10N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F10N60

    Abstract: No abstract text available
    Text: SDP/F10N60 Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS ID Fast Switching. R DS ON (m Ω) Max 100% Avalanche Rated. 600V 10A G D S 0.75 @ VGS=10V,ID=5A TO-220 TO-220F G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )


    Original     		PDF SDP/F10N60 O-220 O-220F SDP10N60 SDF10N60 O-220/220F F10N60

    LL1608-F15N

    Abstract: LL1608-F2N7S 4000 LL1608-F2N2S LL1608-F6N8 LL1608F15n LL1608-F1N5S LL1608-F1N8S LL1608-F8N2 LL1608-F56N
    Text: Sheet1 STANDARD DEVICES SELECTION GUIDE TYPE LL1608F TOKO Part Number LL1608-F1N2S LL1608-F1N5S LL1608-F1N8S LL1608-F2N2S LL1608-F2N7S LL1608-F3N3_* LL1608-F3N9_* LL1608-F4N7_* LL1608-F5N6_* LL1608-F6N8_* LL1608-F8N2 * LL1608-F10N_* LL1608-F12N_* LL1608-F15N_*


    Original     		PDF LL1608F LL1608-F1N2S LL1608-F1N5S LL1608-F1N8S LL1608-F2N2S LL1608-F2N7S LL1608-F3N3_ LL1608-F3N9_ LL1608-F4N7_ LL1608-F5N6_ LL1608-F15N LL1608-F2N7S 4000 LL1608-F2N2S LL1608-F6N8 LL1608F15n LL1608-F1N5S LL1608-F1N8S LL1608-F8N2 LL1608-F56N

    Untitled

    Abstract: No abstract text available
    Text: F10NL1022 Diodes Bidirectional C-Tapped Transient Suppressor Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage27 @I(R) (A) (Test Condition)100u V(RWM) (V) Work.Pk.Rev.Voltage22 I(PPM) Max.(A)Pk.Pulse Current100 V(C) Nom. (V) Clamping Voltage35.6


    Original     		PDF F10NL1022 Voltage27 Voltage22 Current100 Voltage35

    f10nk50z

    Abstract: f10nk f10nk50 STF10NK F10N STF10NK50Z
    Text: F10NK50Z N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH Power MOSFET in TO-220FP package Datasheet — production data Features Order code VDSS RDS on max ID PTOT F10NK50Z 500 V < 0.7 Ω 9A 30 W • Extremely high dv/dt capability ■ 100% avalanche tested


    Original     		PDF STF10NK50Z O-220FP O-220FP f10nk50z f10nk f10nk50 STF10NK F10N STF10NK50Z

    c2dS

    Abstract: iv02h
    Text: 19-5310; Rev 0; 6/10 TION KIT EVALUA BLE A IL A AV Automotive, Two-Channel Proximity and Touch Sensor The MAX1441 proximity and touch sensor IC is designed for capacitive proximity sensing in automotive passive remote keyless entry PRKE and other applications.


    Original     		PDF MAX1441 MAX1441 c2dS iv02h

    f10nk50z

    Abstract: P10NK50Z P10NK50 f10nk50 stp10nk50z Marking STMicroelectronics to220
    Text: STP10NK50Z F10NK50Z N-CHANNEL 500V - 0.55Ω - 9A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP10NK50Z F10NK50Z 500 V 500 V < 0.7 Ω < 0.7 Ω 9A 9 A(*) 125 W 30 W • ■


    Original     		PDF STP10NK50Z STF10NK50Z O-220 O-220FP O-220 O-220FP f10nk50z P10NK50Z P10NK50 f10nk50 Marking STMicroelectronics to220

    LLV0603F

    Abstract: No abstract text available
    Text: LLV0603-F Series MULTILAYER CERAMIC CHIP INDUCTOR DESCRIPTION The LLV0603-F Series is a multilayer ceramic chip inductor with high-Q characteristics in an EIA standard 0201 footprint 0.6mm x 0.3mm and a low profile of only 0.33mm maximum. Manufactured with a proprietary


    Original     		PDF LLV0603-F 0-47nH 100MHz 800MHz 1800MHz) 250ppm/ CF-262-LLV0603F R-LOG0305A LLV0603F

    0201 footprint

    Abstract: LLV0603F LLV0603-F1N0S LLV0603-F1N2S LLV0603-F1N5S LLV0603-F1N8S LLV0603-F2N2S LLV0603-F2N7S LLV0603-F3N3S LLV0603-F3N9S
    Text: 2 TYPE Multilayer Chip Inductors LLV0603F Meeting Your Needs The LLV0603-F Series is a multilayer ceramic chip inductor with high-Q characteristics in an EIA standard 0201 footprint 0.6mm x 0.3mm and a low profile of only 0.33mm maximum. Manufactured with a proprietary ceramic material and process,


    Original     		PDF LLV0603F LLV0603-F 0-33nH 291A/B 16196C) 8719D, 8720D 338A/B R-LOG0703A 0201 footprint LLV0603F LLV0603-F1N0S LLV0603-F1N2S LLV0603-F1N5S LLV0603-F1N8S LLV0603-F2N2S LLV0603-F2N7S LLV0603-F3N3S LLV0603-F3N9S

    MAX1441

    Abstract: capacitive proximity sensing in automotive passive c2dS
    Text: 19-5310; Rev 0; 7/10 TION KIT EVALUA BLE A IL A AV Automotive, Two-Channel Proximity and Touch Sensor The MAX1441 proximity and touch sensor IC is designed for capacitive proximity sensing in automotive passive remote keyless entry PRKE and other applications.


    Original     		PDF MAX1441 MAX1441 capacitive proximity sensing in automotive passive c2dS

    P10N60

    Abstract: F10N60 10A600VRDS PJF10N60 PJP10N60
    Text: PJP10N60 / F10N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, RDS ON =1.0Ω@VGS=10V, ID=5.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


    Original     		PDF PJP10N60 PJF10N60 O-220AB ITO-220AB O-220AB 2002/95/EC ITO-220AB MIL-STD-750 P10N60 F10N60 10A600VRDS PJF10N60

    F100

    Abstract: No abstract text available
    Text: 5Vdc • HCMOS/ TTL COMPATIBLE FULL-SIZE DIP CRYSTAL CLOCK OSCILLATORS ACO 20.2 x12.6 x 5.08 mm FEATURES: • Wide frequency range. • Tight symmetry option. • Fast rise and fall times. • H C M OS and TTL compatible. • Tristate Enable / Disable options.


    Original     		PDF 500Hz 200MHz 10ppm 20ppm 25ppm 30ppm 35ppm 50ppm F100

    Untitled

    Abstract: No abstract text available
    Text: PPJP10NA60 / F10NA60 600V N-Channel MOSFET 600 V Voltage 10 A Current Features        RDS ON , VGS@10V,ID@5A<0.9Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU


    Original     		PDF PPJP10NA60 PJF10NA60 2011/65/EU IEC61249 O-220AB, ITO-220AB MIL-STD-750, O-220AB O-220AB

    T2C211

    Abstract: MAXQ20 MAXQ7665 anisotropic magnetoresistive circuit Design C0M13 can baudrate prescaler maxim temp sensors analog design guide circuit diagram of full adder 512rc quantum dc drivers
    Text: Rev 0; 12/07 MAXQ7665/MAXQ7666 USER’S GUIDE V- MAGNET MAGNETIC FIELD DIRECTION M I R+ΔR I R-ΔR CAN 2.0B BUS S SHAFT I N ROTATION M M R-ΔR POWER MGMT 16-BIT TIMERS 3 V+ TEMP SENSOR UART (LIN 2.0) JTAG DIGITAL I/O CAN 2.0B 48-TQFN 7mm x 7m m -40°°C to


    Original     		PDF MAXQ7665/MAXQ7666 16-BIT 48-TQFN 16-BIT MAXQ20 AIN11 AIN13 AIN15 AIN10 AIN12 T2C211 MAXQ7665 anisotropic magnetoresistive circuit Design C0M13 can baudrate prescaler maxim temp sensors analog design guide circuit diagram of full adder 512rc quantum dc drivers

    PD36 SMD transistor

    Abstract: 857BH MAXQ2000 MAXQ610 PO46
    Text: Rev 2; 7/10 MAXQ610 USER’S GUIDE MAXQ610 REGULATOR VOLTAGE MONITOR GPIO 16-BIT TIMER 16-BIT MAXQ RISC CPU 4KB ROM SECURE MMU CLOCK 64KB FLASH WATCHDOG 2KB SRAM 16-BIT TIMER 8kHz NANO RING IR DRIVER IR TIMER SPI USART0 USART1 Maxim Integrated Products i


    Original     		PDF MAXQ610 MAXQ610 16-BIT PD36 SMD transistor 857BH MAXQ2000 PO46

    f10nk50z

    Abstract: P10NK50Z STF10NK50Z P10NK50 STP10NK50Z JESD97 p10nk f10nk50
    Text: STP10NK50Z F10NK50Z N-CHANNEL 500V - 0.55Ω - 9A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP10NK50Z F10NK50Z 500 V 500 V < 0.7 Ω < 0.7 Ω 9A 9 A(*) 125 W 30 W • ■


    Original     		PDF STP10NK50Z STF10NK50Z O-220 O-220FP f10nk50z P10NK50Z STF10NK50Z P10NK50 STP10NK50Z JESD97 p10nk f10nk50

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by F10N02Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M S F10N 02Z Medium Power Surface Mount Products TMOS Single N -Channel w ith M onolithic Zener ESD Protected G ate M o to r o la P re fe rre d D e v ic e EZFETs are an advanced series of power MOSFETs which


    OCR Scan     		PDF MMSF10N02Z/D 2PHX43416-0

    F10N12L

    Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
    Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)


    OCR Scan     		PDF RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L 92CS-3374I RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N12L F10N15L 10N15L F10N12 RFP10N15L F10N15 10n15

    hfct5208d

    Abstract: HFCT-5208B STM141
    Text: Thal HEW LETT mLEM PACKARD SC Duplex Single Mode Transceiver Technical Data HFCT-5208 Features Description • SC Duplex Single Mode Transceiver • Interm ediate SONET OC 12 SDH STM 14,1 Compliant • Single +5 V Pow er Supply • Multisourced 1 x 9 Pin


    OCR Scan     		PDF HFCT-5208 825/CDRH HPCT-5208 5966-1890E hfct5208d HFCT-5208B STM141

    Untitled

    Abstract: No abstract text available
    Text: JTlitxan PRODUCT DEVICES.INC. 1177 S L U E H E R O N BLVD. • R I V I E R A BEACH, F L O R I D A 33404 TEL: 407 8 4 8 - 4 3 1 1 • TLX: 5 1 - 3 4 3 5 « F A X : (407) 8 6 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source


    OCR Scan     		PDF

    F10-NC1006

    Abstract: F10-NL1006 F10-NL1022 F10-NL1039
    Text: S E M T R O N INDUSTRIES LTD 13E 1 • ai37iai 0000134 D « S L C B - P I 1 - r > FIO DATALINE PROTECTION Transient Voltage Suppressor ■Glass Passivated Junction Voltage Range 6.8V to 48 Volts Nominal 100A Peak Pulse Current NEW GENERATION APPLICATIONS


    OCR Scan     		PDF ai37fiflT 000G134 F10Waveform F10-NC1006 F10-NL1006 NU012 F10-NL1022 F10-NL1039 10jjS 100mS

    N343632LTQ

    Abstract: N3436 N343632L F55N
    Text: CMOS NKK SRAM Low Voltage Fast Synchronous with Burst Counter N343632L 2M-BIT 64K X 32 _ -K. -M. -N • Features • C M O S S R A M organ ized as 6 5 ,5 3 6 X 32b its • S in g le + 3 .3 V P ow er Su p ply • Fast C lo ck A c c e ss tim e : 5 .5 n s/1 0 0 M H z , 6 n s/9 0 M H z ,


    OCR Scan     		PDF N343632L 100Pin N343632LTQ N3436 N343632L F55N

    Untitled

    Abstract: No abstract text available
    Text: ‘ ON a DATE Jfc He REV. SZSOO IP S DCN t. K & D E S C R I PT I ON NO. % H DR. a üá CHK. APPD. APP D. ON I M V H Q -ê-üM Hi 4> 8 0 Hs- H ±0 . 1 t 0 .4 =»•<=- ( N0 T E 2 ) u SECT. ( S C A L E SECT. ENDING A B 2 0 4 5.5 44 C 2 0 . 2


    OCR Scan     		PDF I-XB20S-H B20S-H F10-N R3000

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor MSC1951-01 16-SEGM ENT, 16-DIGIT BARGRAPH and NUM ERIC G EN ER A L DESCRIPTION M SC1951-01 is a Bi-CMOS bargraph and alphanum eric display controller designed to interface w ith either vacuum fluorescent or LED displays. MSC1951-01 can drive displays w ith up to 16 positions w ith either 16 segm ent bargraph or seven


    OCR Scan     		PDF MSC1951-01 16-SEGM 16-DIGIT SC1951-01 MSC1951-01 16-segment F10nf MSC1937-01

    CLM1117

    Abstract: CLM1117M CLM1117M-X
    Text: 800mA Low Dropout Regulator SCSI-II Active Terminator calodic CORPORATION \J CLM1117 FEATURES PR O D U C T DESCRIPTION • Guaranteed 800mA Output • Three Terminal Adjustable or Fixed 2.85V, 3V, 3.3V, 5V, 10V & 12V • Very Low Quiescent Current • Low Dropout Voltage of 1.2 Volts at Full Load


    OCR Scan     		PDF 800mA CLM1117 OT-223 10mbyte/s. CLM1117 1A44322 CLM1117M CLM1117M-X