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    11293

    Abstract: No abstract text available
    Text: F1688RA HSXAWAVS High Power GaAs FET September 1998 Rev.B Features • High Output Power PidB=36.5dBm typ. @2.4GHz • High Gain G l= OUTLINE DRAWING 12.5dB(typ.)@2.4GHz 1.625(0.065) • High Efficiency T|add =40%(typ.)@2.4GHz • High Linearity IP3=48dBm(typ.)@2.4GHz


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    PDF HWF1688RA 48dBm F1688R Cer75 11293