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Intersil Corporation F1S60P03
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F1S60P03 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RFP60P03 Abstract: RF1S60P03SM RF1S60P03SM9A RFG60P03 TB334 Text: RFG60P03, RFP60P03, F1S60P03SM Data Sheet January 2002 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs Features • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	Original	PDF	RFG60P03, RFP60P03, RF1S60P03SM TA49045. RFP60P03 RF1S60P03SM RF1S60P03SM9A RFG60P03 TB334
RFP60P03 Abstract: RF1S60P03SM RF1S60P03SM9A RFG60P03 TB334 IS421 Text: RFG60P03, RFP60P03, F1S60P03SM Data Sheet July 1999 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs • 60A, 30V Formerly developmental type TA49045. Ordering Information PACKAGE 3951.3 Features These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	Original	PDF	RFG60P03, RFP60P03, RF1S60P03SM TA49045. RFP60P03 RF1S60P03SM RF1S60P03SM9A RFG60P03 TB334 IS421
F1S60P03 Abstract: RF1S60P03 RF1S60P03SM RFG60P03 RFP60P03 RS-380 Text: RFG60P03, RFP60P03, F1S60P03, F1S60P03SM S E M I C O N D U C T O R 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 60A, 30V JEDEC STYLE TO-247 SOURCE DRAIN GATE • rDS ON = 0.027Ω • Temperature Compensating PSPICE Model	Original	PDF	RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM O-247 175oC RF1S60P03 RF1S60P03SM F1S60P03 RF1S60P03 RFG60P03 RFP60P03 RS-380
F1S60P03 Abstract: f1s60 RF1S60P03 RF1S60P03SM RFG60P03 RFP60P03 TB334 Text: [ /Title RFG60 P03, RFP60P 03, RF1S60 P03, RF1S60 P03SM /Subject (60A, 30V, RFG60P03, RFP60P03, F1S60P03, F1S60P03SM Semiconductor 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using	Original	PDF	RFG60 RFP60P RF1S60 P03SM) RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 80e-2 F1S60P03 f1s60 RF1S60P03 RF1S60P03SM RFG60P03 RFP60P03 TB334
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	PDF	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
f1s60 Abstract: No abstract text available Text: RFG60P03, RFP60P03, F1S60P03SM Data Sheet Title FG6 03, P60 3, 1S6 03S bt A, V, 27 m, anwer OSTs utho eyrds ter- July 1999 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs Features These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	Original	PDF	RFG60P03, RFP60P03, RF1S60P03SM TA49045. f1s60
Untitled Abstract: No abstract text available Text: P *3 3 S RFG60P03, RFP60P03, F1S60P03, F1S60P03SM 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti	OCR Scan	PDF	RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 0-027Q 69e-4 33e-6 05e-9 33e-8) 80e-2
Untitled Abstract: No abstract text available Text: in te rrii RFG60P03, RFP60P03, F1S60P03SM D a la S h e e t J u ly 1 9 9 9 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 5 1 .3 Features • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	OCR Scan	PDF	RFG60P03, RFP60P03, RF1S60P03SM TA49045. RF1S60P03SM AN7254 AN7260.