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    F59L2G81 Price and Stock

    Elite Semiconductor Memory Technology Inc F59L2G81A-25T

    Electronic Component
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    ComSIT USA F59L2G81A-25T 500
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    Win Source Electronics F59L2G81A-25T 33,000
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    • 100 $2.167
    • 1000 $2
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    elite F59L2G81A25BIG

    2 GBIT(256M X 8) 3.3V NAND FLASH MEMORY Flash, 256MX8, 25ns, PBGA63
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    ComSIT USA F59L2G81A25BIG 20
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    Elite Semiconductor Memory Technology Inc F59L2G81A-25TG

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    NexGen Digital F59L2G81A-25TG 534
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    Win Source Electronics F59L2G81A-25TG 32,000
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    • 100 $2.167
    • 1000 $2
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    F59L2G81 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NAND Flash

    Abstract: F59L2G81A
    Text: ESMT F59L2G81A Flash 2 Gbit 256M x 8 3.3V NAND Flash Memory FEATURES         Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte


    Original     		PDF F59L2G81A 350us NAND Flash F59L2G81A

    F59L2G81A

    Abstract: F59L2G81A, F59L2G81 two-plane program nand bsc 60h
    Text: ESMT Preliminary F59L2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		PDF F59L2G81A 4bit/512Byte F59L2G81A F59L2G81A, F59L2G81 two-plane program nand bsc 60h

    Untitled

    Abstract: No abstract text available
    Text: ESM T Preliminary F59L2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		PDF F59L2G81A 250us