Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FAIRCHILD P CHANNEL MOSFET Search Results

    FAIRCHILD P CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    FAIRCHILD P CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CBVK741B019

    Abstract: F63TNR FDS6975 L86Z
    Text: February 1999 FAIRCHILD SEMICONDUCTOR T M FDS69 75 Dual P-Channel, Logic Level, PowerTrench MOSFET Features General Description These P-Channel Logic Level MOSFETs are produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		FDS69 CBVK741B019 F63TNR FDS6975 L86Z PDF

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD SEM IC ONDUCTO R February 1999 tm FDS4953 MOSFET Dual P-Channel, Logic Level, PowerTrench General Description Features These P-Channel Logic Level M OSFETs are produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		FDS4953 PDF

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD S E M IC O N D U C T O R November 1998 tm FDS6875 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified M OSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to


    OCR Scan     		FDS6875 PDF

    tic 2260

    Abstract: FDS4435 CBVK741B019 F63TNR L86Z
    Text: FAIRCHILD S E M IC O N D U C T O R October 1998 tm FDS4435 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features This P-Channel Logic Level M OSFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to minimize


    OCR Scan     		FDS4435 tic 2260 FDS4435 CBVK741B019 F63TNR L86Z PDF

    Untitled

    Abstract: No abstract text available
    Text: February 1999 FAIRCHILD S E M IC O N D U C T O R tm FDS69 75 MOSFET Dual P-Channel, Logic Level, PowerTrench General Description Features These P-Channel Logic Level M OSFETs are produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		FDS69 PDF

    SSOT-6

    Abstract: FDC658P CBVK741B019 D872 F63TNR FDC633N y734
    Text: FAIRCHILD February 1999 S E M IC O N D U C T O R TM FDC65 8P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		FDC65 SOl-21 extremely180 SSOT-6 FDC658P CBVK741B019 D872 F63TNR FDC633N y734 PDF

    FDN340P

    Abstract: No abstract text available
    Text: FAIRCHILD November 1998 M IC D N D U C T D R - FDN340P Single P-Channel 2.5V Specified PowerTrench MOSFET F eatures G eneral Description This P-Channel 2.5V specified M OSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    OCR Scan     		FDN340P R0-0030 RO-0030 FDN340P PDF

    fds4435 mosfet

    Abstract: Power MOSFET, Fairchild FDS4435 ds4435 2197f
    Text: FDS4435 FAIRCHILD October 1998 S E M I C O N D U C T O R TM FDS4435 Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    OCR Scan     		FDS4435 FDS4435 DS4435 fds4435 mosfet Power MOSFET, Fairchild 2197f PDF

    FDN336P

    Abstract: SOIC-16
    Text: N ovem ber 1998 FAIRCHILD S E M IC O N D U C T O R TM FDN336P Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    OCR Scan     		FDN336P FDN336P SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: February 1999 FAIRCHILD M IC D N D U C T Q R ! FDC65 8P Single P-Channel, Logic Level, PowerTrench General Description Features This P-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		FDC65 PDF

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD S E M IC O N D U C T O R October 1998 tm FDS6675 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features T his P-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to m inimize


    OCR Scan     		FDS6675 PDF

    RTJC

    Abstract: No abstract text available
    Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m: P-Channel: -40V, -20A, 54m: Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24m: at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD8424H FDD8424H RTJC PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD8424H PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		FDS8958B com/dwg/M0/M08A PDF

    FDS8958B

    Abstract: CQ238
    Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		FDS8958B FDS8958B CQ238 PDF

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V

    Abstract: No abstract text available
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDS8858CZ FDS8858CZ N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V PDF

    FDD3510H

    Abstract: No abstract text available
    Text: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD3510H FDD3510H PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		FDS8958B FDS8958B PDF

    FDS8858

    Abstract: No abstract text available
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDS8858CZ FDS8858 PDF

    FDS8858CZ

    Abstract: fds8858
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDS8858CZ FDS8858CZ fds8858 PDF

    FDS8858CZ

    Abstract: fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDS8858CZ FDS8858CZ fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD3510H FDD3510H PDF

    FDS6575

    Abstract: F63TNR F852 SOIC-16
    Text: November 1998 FDS6575 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize


    Original     		FDS6575 OT-23 FDS6575 F63TNR F852 SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    Original     		FDS6675 OT-23 PDF