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    Rochester Electronics LLC FDC654P

    SMALL SIGNAL FIELD-EFFECT TRANSI
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    DigiKey FDC654P Bulk 2,308,364 1,789
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    Rochester Electronics LLC FDC655AN

    MOSFET N-CH 30V 6.3A SUPERSOT6
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    DigiKey FDC655AN Bulk 299,497 156
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    Rochester Electronics LLC FDC655N

    MOSFET N-CH
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    DigiKey FDC655N Bulk 63,000 1,480
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    Rochester Electronics LLC FDC653N

    SMALL SIGNAL FIELD-EFFECT TRANSI
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    DigiKey FDC653N Bulk 2,505 984
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    onsemi FDC655AN

    MOSFET N-CH 30V 6.3A SUPERSOT6
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    FDC65 Datasheets (45)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    FDC6506 Fairchild Semiconductor Dual P-Channel Logic Level PowerTrench MOSFET Original PDF
    FDC6506P Fairchild Semiconductor Dual P-Channel Logic Level PowerTrench MOSFET Original PDF
    FDC6506P Fairchild Semiconductor Dual P-Channel Logic Level PowerTrench MOSFET Original PDF
    FDC6506P Fairchild Semiconductor Dual P-Channel Logic Level PowerTrench MOSFET Original PDF
    FDC6506P Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDC6506P Fairchild Semiconductor Dual P-Channel Logic Level PowerTrench MOSFET Scan PDF
    FDC6506P_NL Fairchild Semiconductor Dual P-Channel Logic Level PowerTrench MOSFET Original PDF
    FDC653 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC653N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC653N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC653N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDC653N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    FDC653N_NB3E005A Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC653N_NF073 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC653N_NL Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC654P Fairchild Semiconductor Single P-Channel Logic Level PowerTrench MOSFET Original PDF
    FDC654P Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC654P Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDC654P Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    FDC654P_NF073 Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF

    FDC65 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Untitled

    Abstract: No abstract text available
    Text: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,


    Original     		FJBE2150D FDC655 FJBE2150D PDF

    Untitled

    Abstract: No abstract text available
    Text: November 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		FDC653N NB3E005A NF073 PDF

    30bg100

    Abstract: LM347
    Text: R sn Q i l v out 0.02Í2 FDC653N 3.3nH 2.5V, 3A


    OCR Scan     		PDF

    TE Supersot 6

    Abstract: FDC655AN
    Text: FAIRCHILD June 1998 M lC O N D U C T O R FDC655AN Single N-Channel, Logic Level, PowerTrench MOSFET G eneral Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state


    OCR Scan     		FDC655AN TE Supersot 6 PDF

    SOIC-16

    Abstract: FDC654P
    Text: March 1998 FDC654P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		FDC654P OT-23 FDC654P SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDC655BN tm Single N-Channel, Logic Level, PowerTrench MOSFET 30 V, 6.3 A, 25 mΩ Features General Description „ Max rDS on = 25 mΩ at VGS = 10 V, ID = 6.3 A This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process


    Original     		FDC655BN FDC655BN PDF

    g995

    Abstract: WPC8763 G545B2 intel g41 crb ISL6251 ISL6236 WPC8769 acer lcd inverter schematic SLG8SP512 wpc8763ldg
    Text: 5 4 ISL6262A 3 2 1 VCC_CORE <VRON> PU3 D D +5VPCU +5VPCU <AC/DC Insert> FDS6690AS PQ26 FDC653N VIN PQ21 ISL6236 FDC653N PQ27 +3VPCU FDC653N PQ22 +3V_S5 <S5D> C +3VSUS <SUSD> AT814 PU1 FDC653N ADAPTER PQ29 +2.5V <MAINON> +3V <MAIND> VIN AT5206G PU2 BATTERY


    Original     		ISL6262A FDS6690AS FDC653N ISL6236 FDC653N ISL6251 AT5206G AT814 g995 WPC8763 G545B2 intel g41 crb WPC8769 acer lcd inverter schematic SLG8SP512 wpc8763ldg PDF

    FDC6506P

    Abstract: dual mosfet marking 506
    Text: FDC6506P Dual P-Channel Logic Level PowerTrench MOSFET General Description Features These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for


    Original     		FDC6506P FDC6506P dual mosfet marking 506 PDF

    FDC6561AN

    Abstract: SOIC-16
    Text: April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		FDC6561AN OT-23 FDC6561AN SOIC-16 PDF

    FDC653N

    Abstract: Supersot 6 Scans-0037042
    Text: FAIRCHILD MICQNDUCTDR M I jq q " 7 N ovem ber 1997 tm FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell


    OCR Scan     		FDC653N FDC653N Supersot 6 Scans-0037042 PDF

    dual n-channel mosfet super sot-6

    Abstract: d872 SSOT-6 FDG6561 CBVK741B019 F63TNR FDC633N FDC6561AN dual n-channel mosfet super sot-6 powertrench diode ko
    Text: FAIRCHILD April 1999 S E M IC O N D U C T O R TM FDC6561AN Dual N-Channel Logic Level PowerTrench MOSFET F eatures G en eral D escription These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		FDC6561AN dual n-channel mosfet super sot-6 d872 SSOT-6 FDG6561 CBVK741B019 F63TNR FDC633N FDC6561AN dual n-channel mosfet super sot-6 powertrench diode ko PDF

    CBVK741B019

    Abstract: F63TNR FDC633N FDC658P SOIC-16
    Text: February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		FDC658P OT-23 CBVK741B019 F63TNR FDC633N FDC658P SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: R A I R C H I I - D March 1998 M ICDNDUCTO R ^ FDC654P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		FDC654P FDC654P PDF

    SSOT-6

    Abstract: CBVK741B019 F63TNR FDC633N FDC6561AN SOIC-16
    Text: April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		FDC6561AN OT-23 SSOT-6 CBVK741B019 F63TNR FDC633N FDC6561AN SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 30 V, 6.3 A, 25 mΩ Features tm General Description ̈ Max rDS on = 25 mΩ at VGS = 10 V, ID = 6.3 A This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process


    Original     		FDC655BN PDF

    Untitled

    Abstract: No abstract text available
    Text: November 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		FDC653N OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain


    Original     		FDC655BN 10elopment. PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1998 FDC654P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		FDC654P OT-23 PDF

    FDC6561AN

    Abstract: CBVK741B019 F63TNR FDC633N SOIC-16
    Text: April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		FDC6561AN OT-23 FDC6561AN CBVK741B019 F63TNR FDC633N SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: F /\IR G H II_ D N ovem ber 1997 MlC O N D U C T O R FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell


    OCR Scan     		FDC653N PDF

    Untitled

    Abstract: No abstract text available
    Text: FJP2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when


    Original     		FJP2145 FDC655 FJP2145 PDF

    Untitled

    Abstract: No abstract text available
    Text: February 1999 FAIRCHILD M IC D N D U C T Q R ! FDC65 8P Single P-Channel, Logic Level, PowerTrench General Description Features This P-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		FDC65 PDF

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD S E M IC O N D U C T O R April 1999 tm FDC6561AN Dual N-Channel Logic Level PowerTrench MOSFET Features General Description These N-Channel Logic Level M OSFETs are produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		FDC6561AN PDF

    FDC654P

    Abstract: No abstract text available
    Text: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		FDC654P FDC654P PDF