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    FAIRCHILD TO220AB PACKAGE Search Results

    FAIRCHILD TO220AB PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    FAIRCHILD TO220AB PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    RURP6120CC

    Abstract: No abstract text available
    Text: RURP6120CC 6A, 1200V Ultrafast Dual Diode October 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <70ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC TO-220AB . +175oC ANODE 2 CATHODE ANODE 1


    Original     		RURP6120CC O-220AB 175oC RURP6120CC PDF

    RURP640CC

    Abstract: RURP650CC RURP660CC FAIRCHILD to220ab package
    Text: RURP640CC, RURP650CC, RURP660CC 6A, 400V - 600V Ultrafast Dual Diodes January 2002 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC TO-220AB . +175oC


    Original     		RURP640CC, RURP650CC, RURP660CC O-220AB 175oC RURP660CC RURP640CC RURP650CC FAIRCHILD to220ab package PDF

    RURP640CC

    Abstract: RURP650CC RURP660CC
    Text: RURP640CC, RURP650CC, RURP660CC 6A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC TO-220AB . +175oC


    Original     		RURP640CC, RURP650CC, RURP660CC O-220AB 175oC RURP660CC RURP640CC RURP650CC PDF

    14N36GVL

    Abstract: HGT1S14N36G3VLS TO-262AA equivalent IGBT DRIVER ignition coil automotive HGT1S14N36G3VL HGT1S14N36G3VLT HGTP14N36G3VL IC100 LD26 Intersil ignition IGBT
    Text: HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs September 2001 Features Packages JEDEC TO-220AB • Logic Level Gate Drive EMITTER COLLECTOR GATE • Internal Voltage Clamp • ESD Gate Protection COLLECTOR


    Original     		HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS O-220AB O-262AA 14N36GVL HGT1S14N36G3VLS TO-262AA equivalent IGBT DRIVER ignition coil automotive HGT1S14N36G3VL HGT1S14N36G3VLT HGTP14N36G3VL IC100 LD26 Intersil ignition IGBT PDF

    TDA8844

    Abstract: ic TDA8842 TDA8842 OF IC 78xx regulator Samsung TV tuners module LMC556 LM317 toshiba uA4558 uhf linear amplifier module 5w KA7500
    Text: Function Pins Package IK Semi OP AMP Dual Operational Amplifer Dual Operational Amplifer Dual Operational Amplifer 8 8 8 DIP/SOP/SIP DIP/SOP/SIP DIP/SOP IL358 IL4558 IL4560 Dual Operational Amplifer Quad Operational Amplifer Low Power J-FET Dual Operational Amplifer


    Original     		IL358 IL4558 IL4560 IL4580 IL324 IL062 IL072 IL082 IL1776C IL1458 TDA8844 ic TDA8842 TDA8842 OF IC 78xx regulator Samsung TV tuners module LMC556 LM317 toshiba uA4558 uhf linear amplifier module 5w KA7500 PDF

    automotive ignition coil on plug

    Abstract: V5036S V5036 ignition IGBTS drivers ISL9V3036P3 ISL9V5036P3 ISL9V5036S3S
    Text: ISL9V5036S3S / ISL9V5036P3 EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT General Description Applications The ISL9V5036S3S and ISL9V5036P3 are the next generation IGBTs that offer outstanding SCIS capability in the D² -Pak TO263 and TO-220 plastic package. These devices are intended for


    Original     		ISL9V5036S3S ISL9V5036P3 500mJ, ISL9V5036P3 O-220 500mJ automotive ignition coil on plug V5036S V5036 ignition IGBTS drivers ISL9V3036P3 PDF

    V3036P

    Abstract: automotive ignition coil on plug V3036 IGBT DRIVER ignition coil automotive TO-252AA fairchild igbt ignition ISL9V3036D3S ISL9V3036P3 ISL9V3036S3S FAIRCHILD to220ab package
    Text: ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT General Description Applications The ISL9V3036D3S, ISL9V3036S3S, and ISL9V3036P3 are the next generation IGBTs that offer outstanding SCIS capability in the space saving D-Pak TO-252 , as well as the industry standard D²Pak (TO-263) and TO-220 plastic packages. These devices are


    Original     		ISL9V3036D3S ISL9V3036S3S ISL9V3036P3 300mJ, ISL9V3036D3S, ISL9V3036S3S, ISL9V3036P3 O-252) O-263) O-220 V3036P automotive ignition coil on plug V3036 IGBT DRIVER ignition coil automotive TO-252AA fairchild igbt ignition FAIRCHILD to220ab package PDF

    SGH80N60RUFD

    Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
    Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)


    Original     		SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120 PDF

    RURP6120CC

    Abstract: No abstract text available
    Text: RURP6120CC 6A, 1200V Ultrafast Dual Diode January 2002 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <70ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC TO-220AB . +175oC ANODE 2 CATHODE ANODE 1


    Original     		RURP6120CC O-220AB 175oC RURP6120CC PDF

    14n40fvl

    Abstract: HGTP14N40F3VL
    Text: HGTP14N40F3VL 14A, 400V N-Channel, Logic Level Voltage Clamping IGBT December 2001 Features • • • • • Package Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection TJ = +150oC Ignition Energy Capable JEDEC TO-220AB EMITTER COLLECTOR GATE


    Original     		HGTP14N40F3VL O-220AB 150oC 14n40fvl HGTP14N40F3VL PDF

    IGBT DRIVER ignition coil automotive

    Abstract: 14n40fvl igbt ignition GE 443 14N40 automotive ignition coil design of ignition and fuel system HGTP14N40F3VL LD26 intersil ignition
    Text: HGTP14N40F3VL 14A, 400V N-Channel, Logic Level Voltage Clamping IGBT April 1995 Features • • • • • Package Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection TJ = +150oC Ignition Energy Capable JEDEC TO-220AB EMITTER COLLECTOR GATE


    Original     		HGTP14N40F3VL 150oC O-220AB IGBT DRIVER ignition coil automotive 14n40fvl igbt ignition GE 443 14N40 automotive ignition coil design of ignition and fuel system HGTP14N40F3VL LD26 intersil ignition PDF

    FAIRCHILD to220ab package

    Abstract: RHRP640CC RHRP650CC RHRP660CC TB334
    Text: RHRP640CC, RHRP650CC, RHRP660CC January 1998 Title HRP 0CC 4464 6A, 400V - 600V Hyperfast Dual Diodes Features RHRP640CC, RHRP650CC and RHRP660CC are hyperfast dual diodes with soft recovery characteristics t rr < 30ns . They have half the recovery time of ultrafast diodes and are


    Original     		RHRP640CC, RHRP650CC, RHRP660CC RHRP650CC RHRP660CC 175oC FAIRCHILD to220ab package RHRP640CC TB334 PDF

    FAIRCHILD to220ab package

    Abstract: TO220AB package TO-220AB TO-220AB Package 220AB TO220AB code p8
    Text: TO-220AB Package Dimensions TO-220AB FS PKG Code P8 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 2.24 2000 Fairchild Semiconductor International September 1999, Rev. A


    Original     		O-220AB O-220AB FAIRCHILD to220ab package TO220AB package TO-220AB TO-220AB Package 220AB TO220AB code p8 PDF

    20n36

    Abstract: No abstract text available
    Text: HGTP20N36G3VL,HGT1S20N36G3VLS, HGT1S20N36G3VL 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs December 2002 Features Packages JEDEC TO-220AB • Logic Level Gate Drive E C • Internal Voltage Clamp G COLLECTOR FLANGE • ESD Gate Protection • TJ = 175oC


    Original     		HGTP20N36G3VL HGT1S20N36G3VLS, HGT1S20N36G3VL 175oC O-220AB O-263AB 20n36 PDF

    FGPF4633

    Abstract: FGH40N60SFD fgpf50n33 FGA25N120 FGH60N60 fga70n33 fgd4536 FGH60N60SFD FGH40N60 fgh80n60
    Text: FAIRCHILD IGBTs, JFETs and Power MOSFETs Products may be RoHS compliant. Check mouser.com for RoHS status. *Kinked Leads ♦ Surface Mount Device MOUSER STOCK NO. Mfr. For quantities greater than listed, call for quote. Package Mfr. Part No. BVCES IC Min V (A)


    Original     		O-220F 512-FGPF4633TU 512-FGD4536TM 512-HGTP7N60B3D O-252 512-HGT1S20N60C3S9A 512-FGP20N60UFDTU 512-FGAF40N60UFDTU FGPF4633 FGH40N60SFD fgpf50n33 FGA25N120 FGH60N60 fga70n33 fgd4536 FGH60N60SFD FGH40N60 fgh80n60 PDF

    TO-263AB

    Abstract: igbt ignition HGTP20N36G3VL ignition IGBTS HGT1S20N36G3VL HGT1S20N36G3VLS IC100
    Text: HGTP20N36G3VL,HGT1S20N36G3VLS, HGT1S20N36G3VL 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs March 2004 Features Packages JEDEC TO-220AB • Logic Level Gate Drive E C • Internal Voltage Clamp G COLLECTOR FLANGE • ESD Gate Protection • TJ = 175oC


    Original     		HGTP20N36G3VL HGT1S20N36G3VLS, HGT1S20N36G3VL O-220AB 175oC O-263AB TO-263AB igbt ignition ignition IGBTS HGT1S20N36G3VL HGT1S20N36G3VLS IC100 PDF

    20N36GVL

    Abstract: 20n36 ignition WITH IGBTS
    Text: HGTP20N36G3VL,HGT1S20N36G3VLS, HGT1S20N36G3VL 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs November 2003 Features Packages JEDEC TO-220AB • Logic Level Gate Drive E C • Internal Voltage Clamp G COLLECTOR FLANGE • ESD Gate Protection • TJ = 175oC


    Original     		HGTP20N36G3VL HGT1S20N36G3VLS, HGT1S20N36G3VL 175oC O-220AB O-263AB 20N36GVL 20n36 ignition WITH IGBTS PDF

    RHR6120C

    Abstract: RHRP6120CC TA49058
    Text: RHRP6120CC July 1996 Title HRP 20C bt A, 00V pert al ode utho rpoon, pert al ode, ache ergy ted, 4091.1 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns). It has half the recovery time of ultrafast diodes and is silicon nitride


    Original     		RHRP6120CC RHRP6120CC RHR6120C TA49058 PDF

    BYW51100

    Abstract: BYW51-100 BYW51 BYW51150 BYW51-150 BYW51200 BYW51-200 FAIRCHILD to220ab package
    Text: BYW51-100, BYW51-150, BYW51-200 December 2001 8A, 100V - 200V Ultrafast Dual Diodes Features The BYW51 series devices are low forward voltage drop, ultra-fast-recovery rectifiers tRR < 35ns . They use a planar ion-implanted epitaxial construction. • Ultra Fast Recovery Time (<35ns)


    Original     		BYW51-100, BYW51-150, BYW51-200 BYW51 BYW51100 BYW51-100 BYW51150 BYW51-150 BYW51200 BYW51-200 FAIRCHILD to220ab package PDF

    14N36GVL

    Abstract: HGT1S14N36G3VLS HGT1S14N36G3VL HGT1S14N36G3VLS9A HGTP14N36G3VL IC100 LD26 IGBT DRIVER ignition coil automotive 550uH
    Text: HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs December 2001 Features Packages JEDEC TO-220AB • Logic Level Gate Drive EMITTER COLLECTOR GATE • Internal Voltage Clamp • ESD Gate Protection COLLECTOR


    Original     		HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS O-220AB O-262AA 14N36GVL HGT1S14N36G3VLS HGT1S14N36G3VL HGT1S14N36G3VLS9A HGTP14N36G3VL IC100 LD26 IGBT DRIVER ignition coil automotive 550uH PDF

    BYW51100

    Abstract: BYW51 BYW51-200 BYW51-150 BYW51-100 BYW51150 BYW51200 FAIRCHILD to220ab package
    Text: BYW51-100, BYW51-150, BYW51-200 June 1995 File Number 8A, 100V - 200V Ultrafast Dual Diodes Features The BYW51 series devices are low forward voltage drop, ultra-fast-recovery rectifiers tRR < 35ns . They use a planar ion-implanted epitaxial construction.


    Original     		BYW51-100, BYW51-150, BYW51-200 BYW51 BYW51100 BYW51-200 BYW51-150 BYW51-100 BYW51150 BYW51200 FAIRCHILD to220ab package PDF

    Untitled

    Abstract: No abstract text available
    Text: ISL9V5036P3_F085 EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT General Description Applications The ISL9V5036P3_F085 is the next generation IGBT that offer outstanding SCIS capability in the TO-220 plastic package. This device is intended for use in automotive ignition circuit,


    Original     		ISL9V5036P3 500mJ, O-220 500mJ PDF

    ecospark 105

    Abstract: IGBT DRIVER ignition coil automotive ISL9V5036P3 isl9v5036p3_f085 ISL9V5036 igbt ignition V5036P smart ignition igbt
    Text: ISL9V5036P3_F085 EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT General Description Applications The ISL9V5036P3_F085 is the next generation IGBT that offer outstanding SCIS capability in the TO-220 plastic package. This device is intended for use in automotive ignition circuit,


    Original     		ISL9V5036P3 500mJ, O-220 500mJ ecospark 105 IGBT DRIVER ignition coil automotive isl9v5036p3_f085 ISL9V5036 igbt ignition V5036P smart ignition igbt PDF