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    onsemi FCH22N60N

    MOSFET N-CH 600V 22A TO247-3
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    Newark FCH22N60N Bulk 60
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    Rochester Electronics FCH22N60N 1,721 1
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    TME FCH22N60N 1
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    New Advantage Corporation FCH22N60N 180 1
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    Fairchild Semiconductor Corporation FCH22N60N

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    FCH22N60N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FCH22N60N Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 22A TO-247 Original PDF

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    FCH22N60N

    Abstract: FCH22N60 11A 650V MOSFET
    Text: SupreMOSTM FCH22N60N tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior


    Original     		PDF FCH22N60N FCH22N60N FCH22N60 11A 650V MOSFET

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    Abstract: No abstract text available
    Text: FCH22N60N N-Channel SupreMOS MOSFET 600 V, 22 A, 165 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCH22N60N

    FCH22N60N

    Abstract: No abstract text available
    Text: FCH22N60N N-Channel SupreMOS MOSFET 600 V, 22 A, 165 mΩ Features Description • RDS on = 140 mΩ (Typ.)@ VGS = 10 V, ID = 11 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCH22N60N FCH22N60N 150oC