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    FCP13N60N Search Results

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    FCP13N60N Price and Stock

    Rochester Electronics LLC FCP13N60N

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey FCP13N60N Bulk 116
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    onsemi FCP13N60N

    MOSFET N-CH 600V 13A TO220-3
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    DigiKey FCP13N60N Tube
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    Arrow Electronics FCP13N60N 493 99 Weeks 50
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    Newark FCP13N60N Bulk 100
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    Future Electronics FCP13N60N Tube 500 10 Weeks 50
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    Rochester Electronics FCP13N60N 680 1
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    Flip Electronics FCP13N60N 737
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    New Advantage Corporation FCP13N60N 400 1
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    Flip Electronics FCP13N60N

    MOSFET N-CH 600V 13A TO220-3
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    DigiKey FCP13N60N Tube 737
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    Aptina Imaging FCP13N60N

    Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220 Tube
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    Verical FCP13N60N 630 129
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    FCP13N60N 450 50
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    Fairchild Semiconductor Corporation FCP13N60N

    Power Field-Effect Transistor, 13A, 600V, 0.258ohm, N-Channel, MOSFET, TO-220AB
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    Rochester Electronics FCP13N60N 3,541 1
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    ComSIT USA FCP13N60N 200
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    FCP13N60N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FCP13N60N Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 13A TO220 Original PDF

    FCP13N60N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FCPF13N60NT

    Abstract: FCP13N60N
    Text: FCP13N60N / FCPF13N60NT N-Channel SupreMOS MOSFET 600 V, 13 A, 258 mΩ Features Description • RDS on = 244 mΩ (Typ.) @ VGS = 10 V, ID = 6.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology


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    PDF FCP13N60N FCPF13N60NT FCPF13N60NT

    Untitled

    Abstract: No abstract text available
    Text: FCP13N60N / FCPF13N60NT N-Channel SupreMOS MOSFET 600 V, 13 A, 258 mΩ Features Description • RDS on = 220 mΩ (Typ.) @ VGS = 10 V, ID = 6.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology


    Original
    PDF FCP13N60N FCPF13N60NT

    fcp13n60n

    Abstract: FCPF13N60 FCPF13N60NT fcp13n60 304N
    Text: SupreMOSTM FCP13N60N / FCPF13N60NT N-Channel MOSFET 600V, 13A, 0.258Ω Features Description • RDS on = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


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    PDF FCP13N60N FCPF13N60NT FCPF13N60 FCPF13N60NT fcp13n60 304N

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FCP11N60

    Abstract: AN-9068 FCP11N60 Equivalent FCP20N60 FCP22N60N FCPF11N60NT FCP11N60N FCPF9N60NT FCP13N60N FCP9N60N
    Text: www.fairchildsemi.com AN-9068 Gate Resistor Design Guidelines for SupreMOS Summary The faster switching of power MOSFETs enables higher power conversion efficiency. However, parasitic components in the devices and boards are involving switching characteristics more as the switching speed is


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    PDF AN-9068 FCP11N60 AN-9068 FCP11N60 Equivalent FCP20N60 FCP22N60N FCPF11N60NT FCP11N60N FCPF9N60NT FCP13N60N FCP9N60N