FLM64724F
Abstract: No abstract text available
Text: FLM6472-4F C-Band Internally FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 36% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package
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FLM6472-4F
-46dBc
FLM6472-4F
FCSI0999M200
FLM64724F
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108 to 174 mhz
Abstract: FLM7179-4F
Text: FLM7179-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 35% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω
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FLM7179-4F
-46dBc
FLM7179-4F
FCSI0999M200
108 to 174 mhz
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PDF
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FHX04
Abstract: FHX04X FHX05X FHX06X hemt low noise die
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
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FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
FHX06X
2-18GHz
FHX04
FHX04X
FHX05X
hemt low noise die
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PDF
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FUJITSU MMIC LNA
Abstract: FMM5701LG lg s12 mmic case styles 26GHz LNA fmm5701
Text: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1.6dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION The FMM5701LG is a LNA MMIC designed for applications in the
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FMM5701LG
24GHz
18-24GHz
FMM5701LG
18-24GHz
FCSI0999M200
FUJITSU MMIC LNA
lg s12
mmic case styles
26GHz LNA
fmm5701
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PDF
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diode Free 18-24GHz
Abstract: FMM5701LG FUJITSU MMIC LNA
Text: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1.6dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION The FMM5701LG is a LNA MMIC designed for applications in the
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Original
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FMM5701LG
24GHz
18-24GHz
FMM5701LG
18-24GHz
FCSI0999M200
diode Free 18-24GHz
FUJITSU MMIC LNA
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PDF
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FLM6472-4F
Abstract: No abstract text available
Text: FLM6472-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω
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Original
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FLM6472-4F
-46dBc
FLM6472-4F
FCSI0999M200
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PDF
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Untitled
Abstract: No abstract text available
Text: FLM7179-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 35% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W
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Original
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FLM7179-4F
-46dBc
FLM7179-4F
FCSI0999M200
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PDF
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FLM6472-4F
Abstract: No abstract text available
Text: FLM6472-4F C-Band Internally FEATURES • • • • • • • High Output Power: P ^ b = 36.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 36% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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OCR Scan
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-46dBc
FLM6472-4F
FLM6472-4F
FCSI0999M200
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PDF
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FLM7179-4F
Abstract: 323CL 3852 r
Text: FLM7179-4F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 36.5dBm Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: r iadd = 35% (Typ.) Low IM 3 = -46dBc@Po = 25.5dBm
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OCR Scan
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-46dBc
FLM7179-4F
FLM7179-4F
FCSI0999M200
323CL
3852 r
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PDF
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FHX04X
Abstract: fujitsu hemt GaAs FET HEMT Chips hemt low noise die FHX04 FHX05X FHX06X FET transistors with s-parameters FUJITSU AU GM 90 562 573
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
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FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
FHX06X
2-18GHz
FHX04X
fujitsu hemt
GaAs FET HEMT Chips
hemt low noise die
FHX04
FHX05X
FET transistors with s-parameters
FUJITSU AU
GM 90 562 573
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PDF
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