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    638Z

    Abstract: FDC638APZ MOSFET 20V 45A
    Text: FDC638APZ P-Channel 2.5V PowerTrench Specified MOSFET –20V, –4.5A, 43mΩ Features General Description „ Max rDS on = 43mΩ at VGS = –4.5V, ID = –4.5A This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process


    Original     		PDF FDC638APZ 72ains FDC638APZ FDC638ASPZ 638Z MOSFET 20V 45A

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    Abstract: No abstract text available
    Text: FDC638APZ P-Channel 2.5V PowerTrench Specified MOSFET –20V, –4.5A, 43mΩ Features General Description ̈ Max rDS on = 43mΩ at VGS = –4.5V, ID = –4.5A This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process


    Original     		PDF FDC638APZ FDC638APZ FDC638ASPZ