FDP7N50U
Abstract: FDPF7N50U
Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP7N50U/FDPF7N50U
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FDPF7N50U
Abstract: No abstract text available
Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP7N50U/FDPF7N50U
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Untitled
Abstract: No abstract text available
Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • 5A, 500V, RDS on = 1.5 @VGS = 10 V
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FDP7N50U/FDPF7N50U
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FDPF7N50U
Abstract: No abstract text available
Text: UniFET TM FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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Original
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FDP7N50U/FDPF7N50U
FDP7N50U/FDPF7N50U
FDPF7N50U
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PDF
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FDPF7N50U
Abstract: FDP7N50U
Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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Original
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FDP7N50U/FDPF7N50U
FDPF7N50U
FDP7N50U
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PDF
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