FDP8880 Search Results

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Rochester Electronics LLC FDP8880 POWER FIELD-EFFECT TRANSISTOR, 1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDP8880	Bulk			573	1 - 10 - 100 - 1000 $0.52 10000 $0.52	Buy Now
onsemi FDP8880 MOSFET N-CH 30V 11A/54A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDP8880	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	FDP8880		1,000		662	1 - 10 - 100 - 1000 $0.5351 10000 $0.5351	Buy Now
Bristol Electronics	FDP8880		2,400			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	FDP8880		1,920			1 $1.6855 10 $1.6855 100 $1.6855 1000 $0.6742 10000 $0.5899	Buy Now
Rochester Electronics	FDP8880		1,396		1	1 $0.5036 10 $0.5036 100 $0.4734 1000 $0.4281 10000 $0.4281	Buy Now

TME	FDP8880				1	1 $0.891 10 $0.703 100 $0.64 1000 $0.587 10000 $0.587	Get Quote
Flip Electronics	FDP8880		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fairchild Semiconductor Corporation FDP8880 Power Field-Effect Transistor, 11A, 30V, 0.0145ohm, N-Channel, MOSFET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	FDP8880		60,783		1	1 $0.5036 10 $0.5036 100 $0.4734 1000 $0.4281 10000 $0.4281	Buy Now

FDP8880 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FDP8880		Fairchild Semiconductor	N-Channel PowerTrench MOSFET		Original	PDF
FDP8880		Fairchild Semiconductor	N-Channel PowerTrench MOSFET		Original	PDF
FDP8880_NL		Fairchild Semiconductor	30V N-Channel PowerTrench MOSFET		Original	PDF

FDP8880 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6mΩ Features General Description r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM	Original	FDP8880 FDB8880 FDB8880 O-263AB O-220AB	PDF
FDP8880 Abstract: FDB8880 Text: FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6mΩ Features General Description r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM	Original	FDP8880 FDB8880 O-263AB O-220AB 20asheet FDB8880	PDF
FDB8880 Abstract: FDP8880 ON semiconductor N51 68E-3 19E1 MOSFET S1A Text: May 2008 FDP8880 / FDB8880 N-Channel PowerTrench MOSFET tmM 30V, 54A, 11.6mΩ General Description Features r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A r DS(ON) = 11.6mΩ, VGS = 10V, ID = 40A High performance trench technology for extremely low r DS(ON) This N-Channel MOSFET has been designed specifically to	Original	FDP8880 FDB8880 O-263AB O-220AB FDB8880 ON semiconductor N51 68E-3 19E1 MOSFET S1A	PDF
Untitled Abstract: No abstract text available Text: May 2008 FDP8880 / FDB8880 N-Channel PowerTrench MOSFET tmM 30V, 54A, 11.6mΩ General Description Features r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A r DS(ON) = 11.6mΩ, VGS = 10V, ID = 40A High performance trench technology for extremely low r DS(ON) This N-Channel MOSFET has been designed specifically to	Original	FDP8880 FDB8880 O-263ABnotice. FDB8880	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF