rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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2SK1254STL-E
Abstract: 2SK1254L DATA SHEET 2SK1254 2SK1254L-E PRSS0004ZD-A PRSS0004ZD-C
Text: 2SK1254 L , 2SK1254(S) Silicon N Channel MOS FET REJ03G0917-0200 (Previous: ADE-208-1255) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source
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2SK1254
REJ03G0917-0200
ADE-208-1255)
PRSS0004ZD-A
PRSS0004ZD-C
2SK1254STL-E
2SK1254L DATA SHEET
2SK1254L-E
PRSS0004ZD-A
PRSS0004ZD-C
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PDF
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2SK125
Abstract: 2SK1254
Text: 2SK1254 L , 2SK1254 S Silicon N-Channel MOS FET Application DPAK-1 High speed power switching 4 4 Features • Low on-resistance • High speed switching • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,
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2SK1254
2SK125
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PDF
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2SK1254
Abstract: Hitachi DSA00347
Text: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1254
Hitachi DSA00347
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PDF
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Hitachi DSA002780
Abstract: No abstract text available
Text: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1254
D-85622
Hitachi DSA002780
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Hitachi DSA00279
Abstract: 2sk1254
Text: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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Original
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2SK1254
Hitachi DSA00279
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PDF
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Hitachi DSA001651
Abstract: No abstract text available
Text: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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Original
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2SK1254
D-85622
Hitachi DSA001651
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PDF
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2SK1259
Abstract: No abstract text available
Text: Power F-MOS FET 2SK1259 2SK1259 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance R ds on : R Ds (on) l = 0 .0 1 2 i! (typ.) Unit: mm 20.5max. • High switching rate : U = 700ns (typ.) 5.3max. • No secondary breakdown
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OCR Scan
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2SK1259
700ns
t-150
ID-50A
Vdd-30V,
2SK1259
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PDF
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2SK1258
Abstract: SC-65
Text: Power F-MOS FET 2SK1258 2SK1258 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON re sistan c e RDb on : RDS (on) l = 0 . 0 2 i l (typ.) • High sw itching ra te : t( = 350ns (typ.) • No secondary breakdow n Unit: mm 25.5max.
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OCR Scan
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2SK1258
350ns
2SK1258
SC-65
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PDF
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Untitled
Abstract: No abstract text available
Text: Power F-MOS FET 2SK1259 2SK1259 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce R ds on : R DS (on) l = 0 .0 1 2 fl (typ.) • High sw itching ra te : tf= 700ns (typ.) • No secondary breakdow n • Low voltage drive is possible
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OCR Scan
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2SK1259
700ns
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PDF
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2sk1259
Abstract: No abstract text available
Text: Power F-MOS FET 2SK1259 • b*ì32flS4 oqusst ö43 «pncs. PANAS0N IC IN ] L /E L E K S E I1 I) b^E 2SK1259 ]> Silicon N-channel Power F-MOS FET Package Dimensions ■ Features • Low ON resistance R ds (on) : R ds (on) 1 = 0.01211 (typ.) • High switching rate : tf = 700ns (typ.)
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OCR Scan
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2SK1259
2SK1259
700ns
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PDF
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2SK1256
Abstract: TC-2510
Text: Power F-MOS FET 2SK1256 2SK1256 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON resistan ce R DS on : R (on) 1 = 0 .07 ft (typ.) ds Unit: mm • High sw itching ra te : t f= 9 5 n s (typ.) • No secondary breakdow n • Low voltage drive is possible
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OCR Scan
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2SK1256
QG1714b
2SK1256
TC-2510
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PDF
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2sk1257
Abstract: 20DRAM CRA-600
Text: P ow er F-MOS FET 2S K 12 5 7 2SK1257 Silicon N-channel Power F-MOS FET • • • • • ■ P a c k a g e D im ensions F e a tu re s Low ON resistance Rt* on : Rj* (on) 1 = 0 .0 2 4 il (typ.) High switching ra te : 1, = 320ns (typ.) No secondary breakdown
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OCR Scan
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2SK1257
320ns
2sk1257
20DRAM
CRA-600
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PDF
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MG100g2ys1
Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
Text: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series
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OCR Scan
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EG50N2YS9*
G15N2YSI
MG25N2YS1
MG50N2YS1
G35Q2YSI
MG25Q2YS1
MG50Q2YS1
MG25S2YS1
G25N1JS1
G50N1JS1
MG100g2ys1
mg25q6es1
MG100J2YS1
YTF830
gt25q103
GT15H101
toshiba MG50N2YS9
MG200J2YS1
mg75n2ys1
MG75J2YS1
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PDF
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2SK1258
Abstract: 100-C SC-65 3010F
Text: Power F-MOS FET 2SK1258 2SK1258 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L o w O N r e s i s t a n c e R d s o n : R d s (o n ) 1 = 0 . 0 2 i l ( ty p .) Unit: mm • H ig h s w itc h in g r a t e : ti = 3 5 0 n s ( t y p . )
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OCR Scan
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2SK1258
350ns
Packag10
DD171SD
100-C
2SK1258
100-C
SC-65
3010F
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PDF
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2SK1255
Abstract: 2SK125
Text: Power F-MOS FET 2SK1255 2SK1255 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • L ow ON re s is ta n c e R DS on : R DS (on) 1 = 0 .1 3 5 A (ty p .) Unit: mm • H igh sw itch in g r a te : t ( = 5 3 n s (ty p .) • No se c o n d a ry b reak d o w n
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OCR Scan
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2SK1255
2SK1255
2SK125
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PDF
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2SK1255
Abstract: No abstract text available
Text: Power F-MOS FET 2SK1255 2SK1255 Silicon N-channel Power F-MOS FET • Package Dim ensions ■ Features • L ow ON r e s is ta n c e R DS on : RDS (on) l = 0 .1 3 5 il (ty p .) Unit: mm • High sw itc h in g r a te : t ( = 5 3 n s (ty p .) • N o s e c o n d a ry b reak d o w n
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OCR Scan
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2SK1255
135ft
VOO-30V
2SK1255
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PDF
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2SK1257
Abstract: contact id converter
Text: Power F-MOS FET 2SK1257 2SK1257 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • L ow ON r e s is ta n c e R Ds on : R ds (on) l = 0 . 0 2 4 i l (ty p .) Unit: mm • H igh sw itch in g r a te : t<= 3 2 0 n s (ty p .) • N o s e c o n d a ry b reak d o w n
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OCR Scan
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2SK1257
024ft
320ns
Tc-25
2SK1257
contact id converter
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PDF
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buz90af
Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Text: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391
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OCR Scan
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2SK192
2SK212
2SK241
BF960
BF961
BF964
BF966S
BF981
OT103
BF996
buz90af
P7NB60FP
P4NB80FP
P6N60
P5NB60FP
2SK30A
buz91a
2SK2645
BUZ100
2SK163
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PDF
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FET 2SK125
Abstract: 2SK125 2sk125 equivalent 2SK125 sony 00MHZ equivalent transistor 2sk
Text: 2SK125 SONY« Silicon N-Channel Junction FET Description The 2SK125 is an N-Channel silicon junction type field effect transistor developed for low-noise amplification at frequencies up to UHF. It is espe cially suitable for when a wide dynamic range is
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OCR Scan
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2SK125
2SK125
100MHz
FET 2SK125
2sk125 equivalent
2SK125 sony
00MHZ
equivalent transistor 2sk
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PDF
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2SK125
Abstract: FET 2SK125 y-parameter 2SK125 sony 2sk125 equivalent 2SK12S
Text: SONY CORP/ COMPONENT PRODS 4TE J> • ñ3flE3ñ3 0003055 7 SONY 2SK125 SO N Y Silicon N-Channel Junction FET Description T ^ J /- 2 S ~ Package Outline Unit: mm The 2SK125 is an N-Channel silicon junction type field effect transistor developed for low-noise
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OCR Scan
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2SK125
2SK125
23fl3
Q0030b3
T-29-25
100MHz
100MHz
FET 2SK125
y-parameter
2SK125 sony
2sk125 equivalent
2SK12S
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PDF
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HITACHI 2SK* TO-247
Abstract: No abstract text available
Text: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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OCR Scan
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2SK1254
HITACHI 2SK* TO-247
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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OCR Scan
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2SK1254
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PDF
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2SK2574
Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
Text: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative
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OCR Scan
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2SK1868
-220F
2SK1255
O-220E
2SK2578
2SK2579
2SK1967
2SK2659
2SK1033
2SK2574
2SK2574
2SK1259
2SK2377
2SK2659
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PDF
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