rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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2SK1259
Abstract: No abstract text available
Text: Power F-MOS FET 2SK1259 2SK1259 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance R ds on : R Ds (on) l = 0 .0 1 2 i! (typ.) Unit: mm 20.5max. • High switching rate : U = 700ns (typ.) 5.3max. • No secondary breakdown
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2SK1259
700ns
t-150
ID-50A
Vdd-30V,
2SK1259
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2SK1258
Abstract: SC-65
Text: Power F-MOS FET 2SK1258 2SK1258 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON re sistan c e RDb on : RDS (on) l = 0 . 0 2 i l (typ.) • High sw itching ra te : t( = 350ns (typ.) • No secondary breakdow n Unit: mm 25.5max.
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2SK1258
350ns
2SK1258
SC-65
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Untitled
Abstract: No abstract text available
Text: Power F-MOS FET 2SK1259 2SK1259 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce R ds on : R DS (on) l = 0 .0 1 2 fl (typ.) • High sw itching ra te : tf= 700ns (typ.) • No secondary breakdow n • Low voltage drive is possible
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2SK1259
700ns
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2sk1259
Abstract: No abstract text available
Text: Power F-MOS FET 2SK1259 • b*ì32flS4 oqusst ö43 «pncs. PANAS0N IC IN ] L /E L E K S E I1 I) b^E 2SK1259 ]> Silicon N-channel Power F-MOS FET Package Dimensions ■ Features • Low ON resistance R ds (on) : R ds (on) 1 = 0.01211 (typ.) • High switching rate : tf = 700ns (typ.)
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OCR Scan
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2SK1259
2SK1259
700ns
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2SK1256
Abstract: TC-2510
Text: Power F-MOS FET 2SK1256 2SK1256 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON resistan ce R DS on : R (on) 1 = 0 .07 ft (typ.) ds Unit: mm • High sw itching ra te : t f= 9 5 n s (typ.) • No secondary breakdow n • Low voltage drive is possible
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OCR Scan
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2SK1256
QG1714b
2SK1256
TC-2510
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PDF
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2sk1257
Abstract: 20DRAM CRA-600
Text: P ow er F-MOS FET 2S K 12 5 7 2SK1257 Silicon N-channel Power F-MOS FET • • • • • ■ P a c k a g e D im ensions F e a tu re s Low ON resistance Rt* on : Rj* (on) 1 = 0 .0 2 4 il (typ.) High switching ra te : 1, = 320ns (typ.) No secondary breakdown
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2SK1257
320ns
2sk1257
20DRAM
CRA-600
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MG100g2ys1
Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
Text: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series
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EG50N2YS9*
G15N2YSI
MG25N2YS1
MG50N2YS1
G35Q2YSI
MG25Q2YS1
MG50Q2YS1
MG25S2YS1
G25N1JS1
G50N1JS1
MG100g2ys1
mg25q6es1
MG100J2YS1
YTF830
gt25q103
GT15H101
toshiba MG50N2YS9
MG200J2YS1
mg75n2ys1
MG75J2YS1
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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2SK1258
Abstract: 100-C SC-65 3010F
Text: Power F-MOS FET 2SK1258 2SK1258 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L o w O N r e s i s t a n c e R d s o n : R d s (o n ) 1 = 0 . 0 2 i l ( ty p .) Unit: mm • H ig h s w itc h in g r a t e : ti = 3 5 0 n s ( t y p . )
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2SK1258
350ns
Packag10
DD171SD
100-C
2SK1258
100-C
SC-65
3010F
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2SK1255
Abstract: 2SK125
Text: Power F-MOS FET 2SK1255 2SK1255 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • L ow ON re s is ta n c e R DS on : R DS (on) 1 = 0 .1 3 5 A (ty p .) Unit: mm • H igh sw itch in g r a te : t ( = 5 3 n s (ty p .) • No se c o n d a ry b reak d o w n
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2SK1255
2SK1255
2SK125
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2SK1255
Abstract: No abstract text available
Text: Power F-MOS FET 2SK1255 2SK1255 Silicon N-channel Power F-MOS FET • Package Dim ensions ■ Features • L ow ON r e s is ta n c e R DS on : RDS (on) l = 0 .1 3 5 il (ty p .) Unit: mm • High sw itc h in g r a te : t ( = 5 3 n s (ty p .) • N o s e c o n d a ry b reak d o w n
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2SK1255
135ft
VOO-30V
2SK1255
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2SK1257
Abstract: contact id converter
Text: Power F-MOS FET 2SK1257 2SK1257 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • L ow ON r e s is ta n c e R Ds on : R ds (on) l = 0 . 0 2 4 i l (ty p .) Unit: mm • H igh sw itch in g r a te : t<= 3 2 0 n s (ty p .) • N o s e c o n d a ry b reak d o w n
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2SK1257
024ft
320ns
Tc-25
2SK1257
contact id converter
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buz90af
Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Text: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391
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2SK192
2SK212
2SK241
BF960
BF961
BF964
BF966S
BF981
OT103
BF996
buz90af
P7NB60FP
P4NB80FP
P6N60
P5NB60FP
2SK30A
buz91a
2SK2645
BUZ100
2SK163
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2SK125
Abstract: FET 2SK125 y-parameter 2SK125 sony 2sk125 equivalent 2SK12S
Text: SONY CORP/ COMPONENT PRODS 4TE J> • ñ3flE3ñ3 0003055 7 SONY 2SK125 SO N Y Silicon N-Channel Junction FET Description T ^ J /- 2 S ~ Package Outline Unit: mm The 2SK125 is an N-Channel silicon junction type field effect transistor developed for low-noise
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2SK125
2SK125
23fl3
Q0030b3
T-29-25
100MHz
100MHz
FET 2SK125
y-parameter
2SK125 sony
2sk125 equivalent
2SK12S
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2SK1254STL-E
Abstract: 2SK1254L DATA SHEET 2SK1254 2SK1254L-E PRSS0004ZD-A PRSS0004ZD-C
Text: 2SK1254 L , 2SK1254(S) Silicon N Channel MOS FET REJ03G0917-0200 (Previous: ADE-208-1255) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source
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2SK1254
REJ03G0917-0200
ADE-208-1255)
PRSS0004ZD-A
PRSS0004ZD-C
2SK1254STL-E
2SK1254L DATA SHEET
2SK1254L-E
PRSS0004ZD-A
PRSS0004ZD-C
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2SK125
Abstract: 2SK1254
Text: 2SK1254 L , 2SK1254 S Silicon N-Channel MOS FET Application DPAK-1 High speed power switching 4 4 Features • Low on-resistance • High speed switching • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,
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2SK1254
2SK125
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2SK1254
Abstract: Hitachi DSA00347
Text: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1254
Hitachi DSA00347
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HITACHI 2SK* TO-247
Abstract: No abstract text available
Text: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1254
HITACHI 2SK* TO-247
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PDF
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Hitachi DSA002780
Abstract: No abstract text available
Text: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1254
D-85622
Hitachi DSA002780
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Hitachi DSA00279
Abstract: 2sk1254
Text: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1254
Hitachi DSA00279
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Untitled
Abstract: No abstract text available
Text: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1254
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PDF
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Hitachi DSA001651
Abstract: No abstract text available
Text: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1254
D-85622
Hitachi DSA001651
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2SK2574
Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
Text: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative
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2SK1868
-220F
2SK1255
O-220E
2SK2578
2SK2579
2SK1967
2SK2659
2SK1033
2SK2574
2SK2574
2SK1259
2SK2377
2SK2659
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