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    FGH3 Price and Stock

    onsemi FGH30S130P

    IGBT 1300V 60A 500W TO-247AB
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    DigiKey FGH30S130P Tube 73 1
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    Verical FGH30S130P 182 2
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    RS FGH30S130P Bulk 2
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    Bristol Electronics FGH30S130P 152
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    Rochester Electronics LLC FGH30N6S2

    N-CHANNEL IGBT
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    DigiKey FGH30N6S2 Tube 293
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    onsemi FGH30N6S2

    IGBT 600V 45A 167W TO247
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    DigiKey FGH30N6S2 Tube 150
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    onsemi FGH30S150P

    IGBT 1500V 60A TO-247
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    onsemi FGH30N6S2D

    IGBT 600V 45A 167W TO247
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    FGH3 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FGH30N120FTDTU Fairchild Semiconductor IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 60A 339W TO247 Original PDF
    FGH30N60LSD Fairchild Semiconductor Low saturation voltage: VCE(sat) =1.1V @ IC = 30A Original PDF
    FGH30N60LSDTU Fairchild Semiconductor Low saturation voltage: VCE(sat) =1.1V @ IC = 30A Original PDF
    FGH30N6S2 Fairchild Semiconductor 600V, SMPS II Series N-Channel IGBT Original PDF
    FGH30N6S2 Fairchild Semiconductor 600V, SMPS II Series N-Channel IGBT Original PDF
    FGH30N6S2 Fairchild Semiconductor IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 167W TO247 Original PDF
    FGH30N6S2D Fairchild Semiconductor 600 V, SMPS II N-Channel IGBT with Anti-Parallel Stealth Diode Original PDF
    FGH30S130P Fairchild Semiconductor IGBTs - Single, Discrete Semiconductor Products, IGBT 1300V 60A 500W TO-247AB Original PDF
    FGH30S150P ON Semiconductor Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1500V 60A TO-247 Original PDF
    FGH30T65UPDT_F155 Fairchild Semiconductor IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 60A 250W TO247-3 Original PDF
    FGH30T65UPDT-F155 ON Semiconductor Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 650V 60A 250W TO247-3 Original PDF

    FGH3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    30N6S2D

    Abstract: No abstract text available
    Text: FGH30N6S2D / FGP30N6S2D / FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs


    Original     		FGH30N6S2D FGP30N6S2D FGB30N6S2D FGH30N6S2D, FGP30N6S2D, FGB30N6S2D 100kHz 30N6S2D PDF

    Untitled

    Abstract: No abstract text available
    Text: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V


    Original     		FGH30N120FTD FGH30N120FTD PDF

    FGH30S130P

    Abstract: fgh30s FGH30 CO120 FGH3
    Text: FGH30S130P Shorted AnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This device is


    Original     		FGH30S130P FGH30S130P fgh30s FGH30 CO120 FGH3 PDF

    30n6s2d

    Abstract: TA49336 FGB30N6S2D FGH30N6S2D FGP30N6S2D
    Text: FGH30N6S2D / FGP30N6S2D / FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs


    Original     		FGH30N6S2D FGP30N6S2D FGB30N6S2D FGH30N6S2D, FGP30N6S2D, FGB30N6S2D 100kHz 30n6s2d TA49336 PDF

    welder inverter 160 dc

    Abstract: welder mosfet igbt welder FGH30N60LSD FGH30N60LSDTU
    Text: FGH30N60LSD tm Features General Description • Low saturation voltage: VCE sat =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a


    Original     		FGH30N60LSD FGH30N60LSD welder inverter 160 dc welder mosfet igbt welder FGH30N60LSDTU PDF

    Untitled

    Abstract: No abstract text available
    Text: FGH30N60LSD tm Features General Description The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		FGH30N60LSD FGH30N60LSD PDF

    design ups inverter

    Abstract: 247A03
    Text: FGH30N60LSD 600 V, 30 A PT IGBT Features General Description • Low Saturation Voltage: VCE sat = 1.1 V @ IC = 30 A Using Fairchild 's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as


    Original     		FGH30N60LSD FGH30N60LSD FGA30N60LSD O-247 design ups inverter 247A03 PDF

    30N6S2

    Abstract: FGB30N6S2 FGB30N6S2T FGH30N6S2 FGP30N6S2 FGP30N6S2D 1108a
    Text: FGH30N6S2 / FGP30N6S2 / FGB30N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with


    Original     		FGH30N6S2 FGP30N6S2 FGB30N6S2 FGH30N6S2, FGP30N6S2, FGB30N6S2 100kHz 200kHZ 30N6S2 FGB30N6S2T FGP30N6S2D 1108a PDF

    FGH30N60LSDTU

    Abstract: FGH30N60LSD mosfet 600V 30A
    Text: FGH30N60LSD tm Features General Description • Low saturation voltage: VCE sat =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a


    Original     		FGH30N60LSD FGH30N60LSD FGH30N60LSDTU mosfet 600V 30A PDF

    600v 30a IGBT

    Abstract: FGH30N120FTD FGH30N120FTDTU IGBT 1200V 60A IGBT 200A 1200V application induction heating IGBT 60A 1200V HIGH VOLTAGE DIODE for microwave ovens igbt 600V 30A datasheet I36 MARKING igbt for HIGH POWER induction heating
    Text: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche


    Original     		FGH30N120FTD 1200ut FGH30N120FTD 600v 30a IGBT FGH30N120FTDTU IGBT 1200V 60A IGBT 200A 1200V application induction heating IGBT 60A 1200V HIGH VOLTAGE DIODE for microwave ovens igbt 600V 30A datasheet I36 MARKING igbt for HIGH POWER induction heating PDF

    Untitled

    Abstract: No abstract text available
    Text: FGH30T65UPDT_F155 650V, 30A Field Stop Trench IGBT Features • Maximum Junction Temperature : TJ = 175oC General Description • Positive Temperaure Co-efficient for Easy Parallel Operating Using novel field stop trench IGBT technology, Fairchild ’s new


    Original     		FGH30T65UPDT 175oC PDF

    fgh30s

    Abstract: No abstract text available
    Text: FGH30S130P 1300 V, 30 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching


    Original     		FGH30S130P fgh30s PDF

    Untitled

    Abstract: No abstract text available
    Text: FGH30N60LSD 600 V, 30 A PT IGBT Features General Description • Low Saturation Voltage: VCE sat = 1.1 V @ IC = 30 A Using Fairchild's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as


    Original     		FGH30N60LSD FGA30N60LSD O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: FGH30N6S2 / FGP30N6S2 / FGB30N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with


    Original     		FGH30N6S2 FGP30N6S2 FGB30N6S2 FGH30N6S2, FGP30N6S2, FGB30N6S2 100kHz PDF

    Untitled

    Abstract: No abstract text available
    Text: FGH30T65UPDT 650V, 30A Field Stop Trench IGBT Features • Maximum Junction Temperature : TJ = 175oC General Description • Positive Temperaure Co-efficient for Easy Parallel Operating Using novel field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance


    Original     		FGH30T65UPDT 175oC PDF

    Untitled

    Abstract: No abstract text available
    Text: FGH30S130P 1300 V, 30 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild ’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching


    Original     		FGH30S130P FGH30S130P PDF

    Untitled

    Abstract: No abstract text available
    Text: FGH30N6S2 / FGP30N6S2 / FGB30N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with


    Original     		FGH30N6S2 FGP30N6S2 FGB30N6S2 FGH30N6S2, FGP30N6S2, FGB30N6S2 100kHz PDF

    FGH30S130P

    Abstract: marking MJ
    Text: FGH30S130P Shorted AnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This device is


    Original     		FGH30S130P FGH30S130P marking MJ PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    Untitled

    Abstract: No abstract text available
    Text: FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V


    Original     		FGA30N120FTD FGA30N120FTD PDF

    fga30n120

    Abstract: FGH30N120FT
    Text: FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT Features • Field Stop Trench Technology General Description • High Speed Switching Using advanced field stop trench IGBT technology, Fairchild ’s 1200V trench IGBTs offer the optimum performance for hard


    Original     		FGA30N120FTD FGA30N120FTD FGH30N120FTD fga30n120 FGH30N120FT PDF

    FGN36AA630NNF

    Abstract: FGH36AA630NNF FEH36AA125JGF FGN36AA400LLF FGH36AA400LLF FGRS3LL0400 FERS3E0063 FEN36AA125JGF FGL36AA400LLF FEN36AA250KKF
    Text: GE Consumer & Industrial Power Protection New Record Plus Draw-out Circuit Breakers Selective & Current Limiting GE imagination at work Record Plus™ Record Plus™ Moulded Case Circuit Breakers Selective and Current Limiting The Record Plus family of circuit breakers is a line of aesthetically and technically coordinated protection devices developed for use in low voltage distribution and control applications. The circuit breakers are available in four sizes, each of


    Original     		150kA. B-9000 I/3254/E/EX FGN36AA630NNF FGH36AA630NNF FEH36AA125JGF FGN36AA400LLF FGH36AA400LLF FGRS3LL0400 FERS3E0063 FEN36AA125JGF FGL36AA400LLF FEN36AA250KKF PDF

    INDUCTION HEATING

    Abstract: induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D
    Text: Discrete Discrete IGBTs BVCES Min V IC@100°C (A) VCE(sat) Typ (V) tf Typ (ns) Short Circuit Rated Built-in Diode 400 130 4.5 1500 No No Camera Strobe HGT1N30N60A4D 600 60 1.8 38 No Yes Power Conversion (SMPS Series) HGT1N40N60A4D 600 63 1.7 35 No Yes Power Conversion (SMPS Series)


    Original     		HGT1N30N60A4D HGT1N40N60A4D HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 SGF23N60UFD SGF15N60RUFD SGF40N60UF INDUCTION HEATING induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF