FH15NT Search Results

FH15NT Price and Stock

Filter by Manufacturer


Walsin Technology Corporation WLCW1005CFH15NTB INDUCTOR WIRE WOUND 15NH 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	WLCW1005CFH15NTB	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.05088	Buy Now
Mouser Electronics	WLCW1005CFH15NTB					1 $0.14 10 $0.123 100 $0.087 1000 $0.06 10000 $0.05	Get Quote

FH15NT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FR4 dielectric constant 4.6 Abstract: CD268 SHF-0289 Stanford SHF-0289 SHF 189 MCH18 822 a b Text: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added	Original	PDF	SHF-0289 SHF-0289 30dBm 250mA. EDS-101241 FR4 dielectric constant 4.6 CD268 Stanford SHF-0289 SHF 189 MCH18 822 a b
SHF-0589 Abstract: MCH18 Text: Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0589 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added	Original	PDF	SHF-0589 SHF-0589 34dBm 500mA. EDS-101242 MCH18
Stanford SHF-0289 Abstract: SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189 Text: Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added	Original	PDF	SHF-0289 30dBm 250mA. EDS-101241 Stanford SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189
SHF-0289 Abstract: SHF 189 FR4 dielectric constant vs temperature Text: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added	Original	PDF	SHF-0289 30dBm 250mA. EDS-101241 SHF 189 FR4 dielectric constant vs temperature
Untitled Abstract: No abstract text available Text: Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET ° 2.45 GHz Application Circuit at 25 C Vds=8V, Idq=250mA Microstrip Segment Specifications Ref. desig. Value Part Number /Style Ref. desig. Value C d2,5 5.6 pF ROHM MCH18 series Z1 50 ohms, 7.3 deg. @ 2450 MHz	Original	PDF	SHF-0289 250mA) MCH18 LL1608- FH15NT