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    FHD882

    Abstract: FHD882E FHD882R FHD882Q
    Text: ৖ൈྯ૵਌ NPN SILICON POWER Transistor NPN SILICON POWER Transistor FHD882 ৖ൈྯ૵਌ DESCRIPTION & FEATURES 概述及特點 。Low saturation voltage VCE sat0 <0.5V(@IC = 2A,IB = 0.2A 。Excellent HFE linearity and high HFE HFE:60 to 400(VCE=2V, IC=1A)


    Original     		OT-89 FHD882 OT-89 FHD882R FHD882Q FHD882P 30VIE FHD882 FHD882E PDF

    FHD882

    Abstract: 2SB772 sot-89 marking 3A sot-89 dcdc sot-89 marking 3a SOT89 FHD882P voltage regulator sot-89 3v high power amplifier sot89 high voltage npn transistor SOT-89 2SB772 TO-252
    Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 EPITAXIAL SILICON Transistor FHD882 SOT-223 TOP FEATURES特征 •High current output up to 3A; ·Low saturation voltage;


    Original     		FHD882 OT-223 2SB772; OT-89 O-252 200mA OT-89 FHD882 2SB772 sot-89 marking 3A sot-89 dcdc sot-89 marking 3a SOT89 FHD882P voltage regulator sot-89 3v high power amplifier sot89 high voltage npn transistor SOT-89 2SB772 TO-252 PDF