MARKING CODE SMD JW
Abstract: TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000
Text: SIEMENS AKTIEN6ESELLSCHAF 47E D • ô53St.0S QQBbbSa Ô m S l E ú SAB 82532 1 INTRODUCTION The Enhanced Serial Communication Controller ESCC2 SAB 82532 is a data communication device with two symmetrical serial channels. It has been designed to implement high-speed com
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T-75-37-07
235b05
82532N-TS
PL-CC-68
MARKING CODE SMD JW
TXC CXO
A51AC
isdn modem
2S34
chmn
m1p7
SAB-R3000
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Untitled
Abstract: No abstract text available
Text: • fl235b05 Q O T O b i 4 213 ■ SIEMENS CGY181 GaAsMMIC Preliminary Datasheet * Power amplifier for PCN/PCS applications * Fully integrated 2 stage amplifier •Operating voltage range: 2.7 to 6 V •Overall power added efficiency 35 % * Input matched to 50 i2, simple output match
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fl235b05
CGY181
Q68000-A8883
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Untitled
Abstract: No abstract text available
Text: B 41 564, B 41 584 B 43 564, B 43 584 Capacitors with Screw Term inals L L Grade For professional current converter technology Voltage ratings up to 500 Vdc Construction • Charge-discharge proof, polar • Aluminum case with insulating sleeve • Poles with screw terminal connections
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KAL0272-T
fl23SbD5
106Hz
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Untitled
Abstract: No abstract text available
Text: Metallized Polypropylene Film Capacitors MKP in Plastic Case B 32 620 . B 32 622 MKP stacked-film capacitors Smallest possible dimensions _ / _ b T I Construction • • • • Dielectric: polypropylene Stacked-film technology Plastic case (UL 94 V-0)
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KMK0089-9
fi53SbDS
D74Abb
160Vdo/9
630Vdc/4
S23Sti05
0074flb7
fl23SL0S
0074flbfl
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R]=2.2kD, R2=47kfl Pin Configuration BCR 108W WHs Q62702-C2275 1= B Package o Ordering Code II CO Marking LU II
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47kfl)
Q62702-C2275
OT-323
fl235bG5
0E35b05
0120bfi3
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Untitled
Abstract: No abstract text available
Text: SIEMENS Plastic Fiber O ptic Transm itter Diode Plastic C onnector Housing SFH 752 SFH 752V Not fo r new design Features • • • • 2.2 mm aperture holds standard 1000 micron plastic fiber No fiber stripping required Good linearity Molded microlens for efficient coupling
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A23SbD5
fl235bDS
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Untitled
Abstract: No abstract text available
Text: SIEMENS C16x-Family of High-Performance CMOS 16-Bit Microcontrollers SAB 88C166 W Preliminary SAB 88C166(W) 16-Bit Microcontrollers with 32 KByte Flash EPROM • • • • • • • • • • • • • • • • • • • • • High Performance 16-bit CPU with 4-Stage Pipeline
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C16x-Family
16-Bit
88C166
0235bQ5
00bl53G
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Untitled
Abstract: No abstract text available
Text: SIEMENS TEMPFET BTS121A Features • • • • • N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin Type v DS BTS 121A 100 V /d 22 A 1 2 3 G D S ^os<on Package
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BTS121A
O-220AB
C67078-S5010-A2
current11111!
623Sb05
i2423
fl23Sb05
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Untitled
Abstract: No abstract text available
Text: SIEM ENS A udio R inging C odec Filter B asic Function A R C O FI-B A Version 1.1 1.3 PSB 2161 BICMOS Features • Applications in digital terminal equipment featuring voice functions • Digital signal processing performs all CODEC functions • Fully compatible to the ITU-T G. 712 and ETSI
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NET33)
16-bit
023Sb05
010271b
P-DSO-28-1
fl235b05
D1DE717
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SAB 0602
Abstract: SAB 529 siemens SAB 0600
Text: 47E D • Ö235b05 0035010 1 ■ S I E G SIEMENS AKTIENGESEL LSCH AF T' Three-Tone Chime Single-Tone Chime Dual-Tone Chime SAB 0600 SAB 0601 SAB 0602 Bipolar IC Features • • • • 7 1 ' 3 M elodious sound Few com ponents required Integrated output stage for 8 Q loudspeaker
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235b05
67000-H
SAB 0602
SAB 529
siemens SAB 0600
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Untitled
Abstract: No abstract text available
Text: SIEMENS C16x-Family of SAB 80C166W/83C166W High-Performance CMOS 16-Bit Microcontrollers Preliminary SAB 80C166W / 83C166W • • • • • • • • • • • • • • • • • • • • • • • • • • • • 16-Bit Microcontroller
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C16x-Family
80C166W/83C166W
16-Bit
80C166W
83C166W
83C166Wonly)
0235bG5
00bl473
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GI 9220
Abstract: sda9090 of IC 9290 sl201 KT3 v6
Text: bSE D • 053 SbDS DDS 3 M 71 bOT « S I E G SIEM E N S _ SIEMENS AKTIENGESELLSCHAF SDA 9290 Picture Processor NMOS 1C Preliminary Data Features • Noise and cross color reduction by field - or frame recursive filtering • 3 adjustments: 4 dB-, 7 dB- or 12 dB reduction
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Q67100-H5040
PL-CC-44
GI 9220
sda9090
of IC 9290
sl201
KT3 v6
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SMD L02
Abstract: smd diode l03 PSB4506
Text: bSE D • fl235bD5 GGS2G21 5 b 3 ■ S I E 6 SIEM EN S SIEMENS AKTIENGESELLSCHAF Simple Hands-Free Add-On Circuit SHAC PSB 44030-P PSB 44030-T Preliminary Data Bipolar 1C Features • • • • • • • • Low voltage operation (min. 2.7 V) for line powered
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fl235bD5
GGS2G21
44030-P
44030-T
P-DSO-20-1
P-DIP-20-1
SMD L02
smd diode l03
PSB4506
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Untitled
Abstract: No abstract text available
Text: bGE D I 3535t.0S G05Q773 453 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHA.F "p-4 Lc"3 3 " 1'3SAE 81C54 C M O S RAM ACMOS 1C Preliminary Data Features • 512 x 8 bit-organization • Multiplexed address and data bus • Tristate address and data lines • On-chip address register
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3535t
G05Q773
81C54
Q67100-H8486
P-DIP-16
4096-bit
fi53SbDS
DDSG77T
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Untitled
Abstract: No abstract text available
Text: S235büS 00^2073 fill SIEMENS Mini PROFET BSP 350 MiniPROFET • • • • • • • • • High-side switch Short-circuit protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Reverse battery protection1
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S235bÃ
Q67000-S227
B35b05
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BSM200GA100D
Abstract: bsm200ga100 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 GA100D stt25
Text: bOE D fl23SbD5 OOMS^OM 4Tb • S I E G ■ SIEMENS SIEMENS AKTIENGESELLSCHAF BSM 200 GA 100 D IGBT Module Preliminary Data V CE = 1000 V J c = 2 7 5 A at r c = 25 C / c = 200 A at T c = 80 C • • • • • Power module Single switch Including fast free-wheel diodes
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fl23SbD5
BSM200GA100D
GA100D
C67076-A2001-A2
SII00253
SII00254
BSM200GA100D
bsm200ga100
siemens igbt BSM 200 GA 120
siemens igbt BSM 300 ga 120
siemens igbt BSM 200 GA 100
stt25
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4 M X 1 6 - B it D y n a m ic R A M H Y B 3 1 6 4 1 6 0 T -5 0 /-6 0 4 k & 8 k R e fre s h h Y B 3 1 6 5 1 6 0 T -5 0 /-6 0 Prelim inary Inform ation • • • • • 4 194 304 words by 16-bit organization 0 to 70 "C operating temperature Fast access and cycle time
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16-bit
3164160T-50)
3164160T-60)
3165160T-50)
fl235bGS
160T-50/-60
16-DRAM
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration
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Q62702-F1062
OT-23
BFT92
H35bD5
900MHz
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