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    Infineon Technologies AG S25FL256SAGMFIG10

    IC FLASH 256MBIT SPI/QUAD 16SOIC
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    Infineon Technologies AG S25FL512SAGMFIG10

    IC FLASH 512MBIT SPI/QUAD 16SOIC
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    Rochester Electronics S25FL512SAGMFIG10 1,387 1
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    Infineon Technologies AG S25FL512SDPMFIG10

    IC FLASH 512MBIT SPI/QUAD 16SOIC
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    DigiKey S25FL512SDPMFIG10 Tray 604 1
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    Infineon Technologies AG S25FL128SDPMFIG10

    IC FLASH 128MBIT SPI/QUAD 16SOIC
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    DigiKey S25FL128SDPMFIG10 Tray 473 1
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    NXP Semiconductors TWR-WIFI-G1011MI

    TOWER WIFI MOD- GAINSPAN
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    DigiKey TWR-WIFI-G1011MI Box 1
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    FIG10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    6968e

    Abstract: TF6968E D002P 65a3
    Text: TF6968E Dual N-Channel MOSFET – ESD Protected VDS=20V RDS ON , VGS # 9 P RDS(ON), VGS # 9  P RDS(ON), VGS # 9  P ID = 6.5A Features • Advanced trench process technology • Specially designed for Li-lon battery packs • Designed for battery switch applications


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    TF6968E 6968E FIG10-Maximum FIG11- 100ms 6968e TF6968E D002P 65a3 PDF

    AP70T03GH

    Abstract: AP70T03GJ 60V 60A TO-252 N-CHANNEL
    Text: AP70T03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching 30V RDS ON 9mΩ ID G ▼ RoHS Compliant BVDSS 60A S Description Advanced Power MOSFETs from APEC provide the


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    AP70T03GH/J-HF O-252 AP70T03GJ) O-251 100us 100ms Fig10. AP70T03GH AP70T03GJ 60V 60A TO-252 N-CHANNEL PDF

    Untitled

    Abstract: No abstract text available
    Text: REV. 0.2 FS6989-DS-02_EN Datasheet FS6989 Single-phase Full-wave Motor Driver NOV 2006 FS6989 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.:886-2-28094742


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    FS6989-DS-02 FS6989 PDF

    Untitled

    Abstract: No abstract text available
    Text: REV. 1.1 FS6611-DS-11_EN Datasheet FS6611 Energy Metering IC with Impulse Output SEP 2006 FS6611 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.:886-2-28094742


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    FS6611-DS-11 FS6611 FS6611 PDF

    Untitled

    Abstract: No abstract text available
    Text: AP70T03AS/P Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 9mΩ ID G 60A S Description G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,


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    AP70T03AS/P O-263 AP70T03AP) O-220 100us 100ms Fig10. PDF

    09N20H

    Abstract: AP09N20H AP09N20J
    Text: AP09N20H/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics D BVDSS RDS ON ID 200V 380mΩ 8.6A G S Description Advanced Power MOSFETs from APEC provide the designer with


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    AP09N20H/J O-252 AP09N20J) O-251 O-251 09N20J 09N20H AP09N20H AP09N20J PDF

    AP70T03GP

    Abstract: AP70T03GS
    Text: AP70T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching Speed BVDSS 30V RDS ON 9mΩ ID G 60A S Description Advanced Power MOSFETs from APEC provide the


    Original
    AP70T03GS/P O-263 AP70T03GP) O-220 100ms Fig10. AP70T03GP AP70T03GS PDF

    Untitled

    Abstract: No abstract text available
    Text: FS6989 Single-phase Full-wave Motor Driver General Description Pin Configuration The FS6989 is a single-phase full wave brushless DC motor driver IC with the functions for thermal shutdown, lock protection, power polarity reverse protection, hall bias circuit and external PWM speed control. The


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    FS6989 FS6989 Fig10 PDF

    02N60

    Abstract: 02N60J 02N60h 2529V
    Text: AP02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Lower Gate Charge ▼ Fast Switching Characteristic G ▼ Simple Drive Requirement BVDSS 700V RDS ON 8.8Ω ID 1.4A S


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    AP02N60H/J-H O-252 AP02N60J-H) O-251 O-251 02N60J 02N60 02N60J 02N60h 2529V PDF

    9936gm

    Abstract: AP9936GM-HF
    Text: AP9936GM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ DC-DC Application ▼ Dual N-channel Device D2 D1 D2 D1 G2 S2 SO-8 S1 30V RDS ON 50mΩ ID ▼ Surface Mount Package ▼ RoHS Compliant BVDSS 5A G1


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    AP9936GM-HF 9936GM 9936gm AP9936GM-HF PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM0903GMA N-CHANNEL ENHANCEMENT-MODE POWER MOSFET D Simple drive requirement Lower gate charge SS Fast switching characteristics SG BV DSS 30V R DS ON 9mΩ ID 60A ESO-8 Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,


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    SSM0903GMA SSM0903GMA PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM70T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge D Simple drive requirement Fast switching G Pb-free, RoHS compliant. BV DSS 30V R DS ON 9mΩ ID 60A S DESCRIPTION G D S The SSM70T03GH is in a TO-252 package, which is widely used for commercial and industrial surface-mount applications, and is well suited


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    SSM70T03GH O-252 SSM70T03GJ O-251, PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM9936GM Dual N-channel Enhancement-mode Power MOSFETs BVD2 Simple drive requirement D2 Lower gate charge D1 D1 Fast switching characteristics R I G2 S2 Pb-free; RoHS compliant. SO-8 S1 BVDSS 30V R DS ON 50mΩ ID 5A G1 DESCRIPTION Advanced Power MOSFETs from Silicon Standard provide the


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    SSM9936GM SSM9936GM PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary LC5830K DATA SHEET LC5830K DATA SHEET Rev.0.3 Rev.0.3 The contents in this data sheet are preliminary, and are subject to changes without notice. SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp Copy Right: SANKEN ELECTRIC CO., LTD. Page.1


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    LC5830K LC5830K PDF

    CM105B104K25A

    Abstract: CT21X5R105K25A TK10202AM9 AP-478
    Text: アプリケーションマニュアル 1ch定電流HブリッジドライバICのご紹介 TK10202AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS


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    TK10202AM9 GC3-L008A HSON3030C-8 200mA) 600mW* 1k200mA 8k150mA CM105B104K25A CT21X5R105K25A TK10202AM9 AP-478 PDF

    MUN2216

    Abstract: MUN2211 MUN2212 MUN2213 MUN2214 MUN2215 MUN2230 MUN2231 MUN2232 0425-c
    Text: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 1 2 SC-59 WEITRON http://www.weitron.com.tw Rev.A 23-Jan-09 MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)


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    MUN2211 SC-59 23-Jan-09 FIG32. FIG33. FIG34. SC-59 MUN2216 MUN2212 MUN2213 MUN2214 MUN2215 MUN2230 MUN2231 MUN2232 0425-c PDF

    KHB7D5N60F1

    Abstract: KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V
    Text: SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


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    KHB7D5N60P1/F1/F2 KHB7D0N60P1 Fig15. Fig16. Fig17. KHB7D5N60F1 KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V PDF

    EM78P153SN

    Abstract: EM78P153SP EM78P153S EM78P153S* writer
    Text: EM78P153S OTP ROM 1. GENERAL DESCRIPTION EM78P153S is an 8-bit microprocessor with low-power and high-speed CMOS technology. It is equipped with a 1024*13-bits Electrical One Time Programmable Read Only Memory OTP-ROM within it. It provides a PROTECTION bit to prevent intrusion of user’s code in the OTP memory as well as 15


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    EM78P153S EM78P153S 13-bits 14-lead EM78P153SP EM78P153SN EM78P153SN EM78P153SP EM78P153S* writer PDF

    48V SMPS

    Abstract: KMB8D2N60QA
    Text: SEMICONDUCTOR KMB8D2N60QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS.


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    KMB8D2N60QA 100ms Fig10. 48V SMPS KMB8D2N60QA PDF

    KHB5D0N50F

    Abstract: KHB5D0N50P KHB5D0N50F2
    Text: SEMICONDUCTOR KHB5D0N50P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB5D0N50P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original
    KHB5D0N50P/F/F2 KHB5D0N50P Fig15. Fig16. Fig17. KHB5D0N50F KHB5D0N50P KHB5D0N50F2 PDF

    KHB019N20F1

    Abstract: KHB019N20F2 KHB019N20P1
    Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters


    Original
    KHB019N20P1/F1/F2 KHB019N20P1 Fig15. Fig16. Fig17. KHB019N20F1 KHB019N20F2 KHB019N20P1 PDF

    KS0075

    Abstract: 0B 2262 8 x 8 DOT MATRIX DISPLAY white 8 x 8 DOT MATRIX DISPLAY S6A0075 samsung LCD controller KS0075
    Text: S6A0075 100 SEG / 34 COM DRIVER & CONTROLLER FOR DOT MATRIX LCD June. 2000. Ver. 0.0 Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express


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    S6A0075 S6A0075 KS0075 0B 2262 8 x 8 DOT MATRIX DISPLAY white 8 x 8 DOT MATRIX DISPLAY samsung LCD controller KS0075 PDF

    Matsuo Film CAPACITOR

    Abstract: 431A 553m 0068PF RCR-2350 c4430
    Text: m MATSUO METALLIZED POLY ETHYLENE TEREPHTHALATE FILM CAPACITORS A CAUTIONS •T h is capacitor is suitable for D C circuit. In case of A C circuit use, please refer to our sales departm ent. • T h e sum of peak value of A C and D C voltage should not exceed the


    OCR Scan
    PDF

    CI 3060 elsys

    Abstract: rs 3060 cj KS0090 KS* I2C driver LCD driver KS KS0090I SEG60
    Text: Pre! iminary K S0090 26C O M /64SEG DRIVER & CONTROLLER FO R STN LCD Rev. 7.0 1. INTRODUCTION DOT MATRIX LCD CONTROLLER & DRIVER K S 0090/90-I K S 0090 / K S0090I is a d o t matrix LC D driver & controller LSI w hich is fabricated by low p o w e r C M O S technology. It can display 2 or 3 lines with 5 x 8 dots form a t.


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    KS0090 26COM/64SEG KS0090/90-I KS0090I KS0090I CI 3060 elsys rs 3060 cj KS* I2C driver LCD driver KS SEG60 PDF