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transistor 400v 3a 40w Abstract: 40w electronic ballast BUL45A crossover LE17 Text: bOE J> • fil331fl7 DDGOSDS b27 « S M L B SEMELAB PLC SEMELAB " T - 3 3 - /Í BUL45A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M EC H A N IC A L D A T A Dimensions in mm Designed for use in electronic ballast	OCR Scan	PDF	fil331fl7 300jiS transistor 400v 3a 40w 40w electronic ballast BUL45A crossover LE17
BUW60 Abstract: LE17 Scans-007954 Text: SEMELAB LTD 37E T> fil331fl7 DDOOnfl SEMELAB JUL 0 8 198Q BUW 60 NPIM MULTI-EPITAXIAL POWER TRANSISTOR Suitable for applications requiring low saturation voltage and high gain for reduced load operation M E C H A N IC A L D A T A Dim ensions in mm FEATURES	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: SEMELAB PLC bPE D • 8133167 QQQOblO 147 H S U L B ■■■I _ T '-'i'V M = rr= MOSPOWER4 “ I G B T m i ” SEME LAB SML65G100BN 1000V 65A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol ^CES All Ratings: T c = 25°C unless otherwise specified.	OCR Scan	PDF	SML65G100BN SML65G100BN IL-STD-750 O-247AD
SML601R6KN Abstract: LE17 SML601R3KN LG plc A-1331A Text: SE H E LA B PLC b0E ^ G 0D Gt i 72 T21 •SMLB MOS POWER =K= 4 Mil SEME LAB SML601R3KN SML601R6KN 600V 6.5A 1.30Q 600V 5.8A 1.60ÌÌ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS *D ’ dm VGS PD VSTG All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	PDF	SML601R3KN SML601R6KN O-22QAC LE17 LG plc A-1331A
diode 152 Abstract: BFC12 Text: IUI i^ E INI SEME BFC12 LAB 4TH GENERATION MOSFET SOT-227 Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 11 e (0 463) VDSS Terminal 1 Terminal 3 Source 2* Gate Terminal 2 Terminal 4 Drain Source 1	OCR Scan	PDF	BFC12 OT-227 MIL-STD-750 diode 152 BFC12