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Abstract: No abstract text available
Text: FLK102MH14 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)15 V(BR)GSS (V) I(D) Max. (A)400m P(D) Max. (W)7.5 Maximum Operating Temp (øC) I(DSS) Min. (A) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.
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FLK102MH14
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FLK102MH-14
Abstract: FLK102MH14 1.5 j50
Text: FLK102MH-14 X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general
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FLK102MH-14
FLK102MH-14
FLK102MH14
1.5 j50
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FLK102MH-14
Abstract: FLK107MH-14
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general
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FLK107MH-14
FLK102MH-14
FCSI0598M200
FLK107MH-14
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FLK107MH-14
Abstract: FLK102MH-14
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general
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FLK107MH-14
FLK102MH-14
FLK107MH-14
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FLK102MH-14
Abstract: FLK102 FLK107MH-14 KU 608
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general
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FLK107MH-14
FLK102MH-14
FCSI0598M200
FLK102
FLK107MH-14
KU 608
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Untitled
Abstract: No abstract text available
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general
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FLK107MH-14
FLK102MH-14
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FLK102
Abstract: FLK102MH-14 FLK107MH-14 ku Band Power GaAs FET
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general
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FLK107MH-14
FLK102MH-14
FLK102
FLK107MH-14
ku Band Power GaAs FET
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Untitled
Abstract: No abstract text available
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general
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FLK107MH-14
FLK102MH-14
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Untitled
Abstract: No abstract text available
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general
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FLK107MH-14
FLK102MH-14
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: F L K l 02MH-14 FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 6.5dB(Typ.) High PAE: r iadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general
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02MH-14
FLK102MH-14
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FLK107MH-14
Abstract: FLK102MH-14 fujitsu gaas fet
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 6.5dB(Typ.) High PAE: r iadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general
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FLK107MH-14
FLK102MH-14
FCSI0598M200
FLK107MH-14
fujitsu gaas fet
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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FMC141401-02
Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking
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FSX52WF
Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of
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FLX202MH-12
FLK202MH-14
FSX52WF
fujitsu "application notes"
fsx51wf
NF037
FMC141401-02
FLL101
fll171
FMC1414P1-02
FLL55
FLL120MK
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