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    FLOTING GATE Search Results

    FLOTING GATE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    FLOTING GATE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60294 IRS21853SPBF DUAL HIGH SIDE DRIVER IC Features • • • • • • Product Summary Gate drive supply range from 10 V to 20 V Under voltage lockout for VCC & VBS1,2 5 V input logic compatible Tolerant to negative transient voltage


    Original     		PDF PD60294 IRS21853SPBF ns/170 IRS21853 16-Lead IRS21853STRPBF SO-16N

    13001 switching circuit

    Abstract: S21853 IRS21853SPBF MS-012AC
    Text: Data Sheet No. PD60294 IRS21853SPBF DUAL HIGH SIDE DRIVER IC Features • • • • • • Product Summary Gate drive supply range from 10 V to 20 V Under voltage lockout for VCC & VBS1,2 5 V input logic compatible Tolerant to negative transient voltage


    Original     		PDF PD60294 IRS21853SPBF ns/170 IRS21853 16-Lead IRS21853STRPBF SO-16N 13001 switching circuit S21853 IRS21853SPBF MS-012AC

    IRS2011SPBF

    Abstract: IRFB4212 MS-012AA IRFB23N15D IRFBC20 IRFBC30 IRFBC40 IRS2011 IRS2011s
    Text: Data Sheet No.PD60221 IRS2011SPBF HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational up to +200V Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 10V to 20V


    Original     		PDF PD60221 IRS2011SPBF 5M-1994. MS-012AA. MS-012AA) IRS2011SPBF IRFB4212 MS-012AA IRFB23N15D IRFBC20 IRFBC30 IRFBC40 IRS2011 IRS2011s

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60294 IRS21853SPBF DUAL HIGH SIDE DRIVER IC Features • • • • • • Product Summary Gate drive supply range from 10 V to 20 V Under voltage lockout for VCC & VBS1,2 5 V input logic compatible Tolerant to negative transient voltage


    Original     		PDF PD60294 IRS21853SPBF ns/170 IRS21853 16-Lead IRS21853STRPBF SO-16N

    IR2117 APPLICATION NOTE

    Abstract: IR2117 . igbt driver IR2117
    Text: Data Sheet No. PD60146 Rev M IR2117/IR2118 S SINGLE CHANNEL DRIVER Features • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60146 IR2117/IR2118 IR2117) IR2118) 5M-1994. MS-012AA. IR2117 APPLICATION NOTE IR2117 . igbt driver IR2117

    IRS2011

    Abstract: IRFB23N15D IRFB4212 IRFBC20 IRFBC30 IRFBC40 MS-012AA
    Text: Data Sheet No.PD60221 revA IRS2011 S & PbF HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational up to +200V Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 10V to 20V


    Original     		PDF PD60221 IRS2011 IRS2011 IRS2011S IRS2011S IRS2011PbF IRS2011SPbF IRFB23N15D IRFB4212 IRFBC20 IRFBC30 IRFBC40 MS-012AA

    IR2117 APPLICATION NOTE

    Abstract: PD65008 hvdc
    Text: Data Sheet No. PD65008 IR2117C/IR2118C SINGLE CHANNEL DRIVER DIE IN WAFER FORM Features • Floating channel designed for bootstrap operation • • • • Fully operational to +600V Tolerant to negative transient voltage - dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD65008 IR2117C/IR2118C IR2117C IR2118C IR2117/IR2118 IR2117 APPLICATION NOTE PD65008 hvdc

    IRS2117

    Abstract: floting gate IRS2118 IRFBC20 IRFBC30
    Text: Data Sheet No. PD60227 IRS2117/IRS2118 S PbF SINGLE CHANNEL DRIVER Features • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20V


    Original     		PDF PD60227 IRS2117/IRS2118 IRS2117) IRS2118) IRS2117PbF IRS2118PbF IRS2117SPbF IRS2118SPbF IRS2117STRPbF IRS2117 floting gate IRS2118 IRFBC20 IRFBC30

    IR2117 APPLICATION NOTE

    Abstract: IR2117 ir2117s igbt driver IR2117 IR2118S IR2118 marking Ax IRFBC20 IRFBC30 d 1497
    Text: Data Sheet No. PD60146 Rev O IR2117 S /IR2118(S) & (PbF) SINGLE CHANNEL DRIVER Features • • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60146 IR2117 /IR2118 IR2117) IR2118) IR2117/IR2118 IR2117 IR2118 IR2118 IR2117 APPLICATION NOTE ir2117s igbt driver IR2117 IR2118S marking Ax IRFBC20 IRFBC30 d 1497

    IR2117 APPLICATION NOTE

    Abstract: IR2117 ir2117s IR2118 igbt driver IR2117 IR2117 datasheet uv 18a IR2118S IRFBC20 IRFBC30
    Text: Data Sheet No. PD60146 Rev N IR2117 S /IR2118(S) & (PbF) SINGLE CHANNEL DRIVER Features • • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60146 IR2117 /IR2118 IR2117) IR2118) IR2117/IR2118 IR2117 IR2118 IR2118 IR2117 APPLICATION NOTE ir2117s igbt driver IR2117 IR2117 datasheet uv 18a IR2118S IRFBC20 IRFBC30

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60146 Rev O IR2117 S /IR2118(S) & (PbF) SINGLE CHANNEL DRIVER Features • • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60146 IR2117 /IR2118 IR2117) IR2118) IR2117/IR2118 IR2117 IR2118 IR2118

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Data Sheet No. PD60227 IRS2117/IRS2118 S PbF SINGLE CHANNEL DRIVER Features • • • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt


    Original     		PDF PD60227 IRS2117/IRS2118 IRS2117) IRS2118) IRS2117PbF IRS2118PbF IRS2117SPbF IRS2118SPbF IRS2117STRPbF

    thomson image intensifier

    Abstract: FLA2 THOMSON-CSF CCD image intensifier quantum efficiency data Thomson-CSF ceramic capacitor TH7895MGRCQ-A TH7895MVRBF TH7895MVRH TH7895MVRHN DIODE T4
    Text: TH 7895M- H FULL FIELD CCD IMAGE SENSOR 512 x 512 PIXELS MULTI-PINNED PHASE MODE (MPP) Optimized for high data rate applications. Image zone : 9.73 × 9.73 mm. Pixel : 19 × 19 µm photomos with 100 % aperture. High dynamic range. FLA1 FR2 FLA4 FPA3 K VSS


    Original     		PDF 7895M- DSTH7895M- T/1197 thomson image intensifier FLA2 THOMSON-CSF CCD image intensifier quantum efficiency data Thomson-CSF ceramic capacitor TH7895MGRCQ-A TH7895MVRBF TH7895MVRH TH7895MVRHN DIODE T4

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60240 IRS20124S PbF DIGITAL AUDIO DRIVER WITH DISCRETE DEAD-TIME AND PROTECTION Features Product Summary • 200V high voltage ratings deliver up to 1000W • • • • • • output power in Class D audio amplifier applications Integrated dead-time generation and bi-directional


    Original     		PDF PD60240 IRS20124S 15/25/35/45ns AN-978 DT98-2a. AN-1070 AN-1071.

    AUDIO 1000W MOSFET POWER AMPLIFIER CIRCUIT

    Abstract: 1000w Mosfet Power Audio Amplifier circuit Diagram
    Text: Data Sheet No. PD60240 revB IRS20124S PbF Digital Audio Driver with Discrete Dead-time and Protection Product Summary Features • 200V high voltage ratings deliver up to 1000W • • • • • • output power in Class D audio amplifier applications Integrated dead-time generation and bi-directional


    Original     		PDF PD60240 IRS20124S 15/25/35/45ns AN-978 DT98-2a. AN-1070 AN-1071. AUDIO 1000W MOSFET POWER AMPLIFIER CIRCUIT 1000w Mosfet Power Audio Amplifier circuit Diagram

    dt98-2a

    Abstract: IRS20124 AN IRS20124S AN-1070 irs20124 IRS20124 AN-1070 IRF MOSFET driver IRS20124S 1841-1-5620 AN-1070 AN-978
    Text: Data Sheet No. PD60240 IRS20124 S PbF Digital Audio Driver with Discrete Deadtime and Protection Product Summary Features • 200 V high voltage ratings deliver up to 1000 W • • • • • • • output power in Class D audio amplifier applications Integrated deadtime generation and bi-directional


    Original     		PDF PD60240 IRS20124 Bi-Directio26 IRS20124S 14-Lead IRS20124SPbF IRS20124STRPbF SO-14 dt98-2a IRS20124 AN IRS20124S AN-1070 IRS20124 AN-1070 IRF MOSFET driver 1841-1-5620 AN-1070 AN-978

    dt98-2a

    Abstract: IRS20124S AN-1070 IRS20124 AN IRS20124 IRS20124 AN-1070 IRS20124S IR20124S DT982a IRS20124STRPbF IRFBC20
    Text: Data Sheet No. PD60240 IRS20124 S PbF Digital Audio Driver with Discrete Deadtime and Protection Product Summary Features • 200 V high voltage ratings deliver up to 1000 W • • • • • • • output power in Class D audio amplifier applications Integrated deadtime generation and bi-directional


    Original     		PDF PD60240 IRS20124 Bi-Directio26 IRS20124S 14-Lead IRS20124SPbF IRS20124STRPbF SO-14 dt98-2a IRS20124S AN-1070 IRS20124 AN IRS20124 AN-1070 IR20124S DT982a IRS20124STRPbF IRFBC20

    24M-bit mask rom

    Abstract: LH5324000D LH5324C00 LH5324C00D 24M-BIT
    Text: INFORMATION L H 5 3 2 4 C 0 0 • 24M-bit Mask-Programmable ROM Pin Connections Description The LH5324C00D User's No. : LH536CXX is a CMOS 24M-bit mask-programmable ROM organized as 1 572 864 X 16 bits. It is fabricated using sillicon-gate CMOS process technology.


    OCR Scan     		PDF 24M-bit LH5324C00 LH5324C00D LH536CXX) 42-pin DIP042-P-0600) A0-A20 24M-bit mask rom LH5324000D LH5324C00 LH5324C00D

    lh5348

    Abstract: lh5s4 lh5348xx sharp mask rom LH534A00T LH5s LH534B00T 40-DIP
    Text: NEW PRODUCT INFORMATION SHARP LH53H4100 • High-speed 4M-bit Mask-Programmable ROM ■ Description Pin Connections The LH53H4100D/N User's No. ! LH5H41XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits. It is fabricated using sillicon-gate CMOS process technology.


    OCR Scan     		PDF LH53H4100 LH53H4100D/N LH5H41XX) LH53H4100D 32-pin DIP032-P-0600) LH53H4100N OP032-P-0525) 4P00N/T lh5348 lh5s4 lh5348xx sharp mask rom LH534A00T LH5s LH534B00T 40-DIP

    lh5348

    Abstract: lh5348xx sharp mask rom lh5s4
    Text: NEW PRODUCT INFORMATION SHARP LH53 H 4100 • High-speed 4M-bit Mask-Programmable ROM ■ Description Pin Connections The LH53H4100D/N User’s No. : LH5H41XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits. It is fabricated using sillicon-gate CMOS process technology.


    OCR Scan     		PDF LH53H4100D/N LH5H41XX) LH53H4100D 32-pin DIP032-P-0600) LH53H4100N OP032-P-0525) A40TSOP 40DIP/44QFJ lh5348 lh5348xx sharp mask rom lh5s4

    lh5s4

    Abstract: lh5348 LH5s lh5s47xx 48-TSOP LH53H4100D LH53H4100N lh534y00d 48TSOP sharp mask rom
    Text: NEW PRODUCT INFORMATION SHARP LH53 H4100 • Description High-speed 4M-bit Mask-Programmable ROM ■ Pin Connections The LH53H4100D/N User's No. ! LH5H41XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits. It is fabricated using sillicon-gate CMOS process technology.


    OCR Scan     		PDF LH53H4100 LH53H4100D/N LH5H41XX) LH53H4100D LH53H4100N 32-pin DIP032-P-0600) OP032-P-0525) A0-A18 lh5s4 lh5348 LH5s lh5s47xx 48-TSOP LH53H4100N lh534y00d 48TSOP sharp mask rom

    LH5324000D

    Abstract: LH5324C00 LH5324C00D LH5365 sharp mask rom 48TSOP LH536
    Text: SHARP NEW PRODUCT INFORMATION LH5324C00 • 24M-bit Mask-Programmable ROM ■ Description Pin Connections The LH5324C00D User’s No. : LH536CXX is a CMOS 24M-bit mask-programmable ROM organized as 1 572 864 X 16 bits. It is fabricated using sillicon-gate CMOS process


    OCR Scan     		PDF LH5324C00 24M-bit LH5324C00D LH536CXX) 42-pin DIP042-P-0600) A0-A20 LH5324000D LH5324C00 LH5324C00D LH5365 sharp mask rom 48TSOP LH536

    82c53-2

    Abstract: No abstract text available
    Text: E200019-27-X2 O K I Sem iconductor M SM 82C54-2RS/GS/JS Previous version: Aug. 1996 CM OS PROGRAM M ABLE INTERVAL TIM ER GENERAL DESCRIPTION The M S M 8 2 C 5 4 -2 R S /G S /JS is a program m able u niversal tim er designed for use in m icrocom puter systems. Based on silicon gate CMOS technology, it requires a standby current


    OCR Scan     		PDF E200019-27-X2 82C54-2RS/GS/JS 82C54-2RS/G 82c53-2

    lt 116d

    Abstract: TK10469M TK10501M TK11701M tk10682m toko 30
    Text: INTEGRATED CIRCUITS 29 TO K O • • • TK 11520-80M • • • • TK11620-90NT • • • • • • • • TK11932-50M TK11900M • • • • TK 10681/2M • • • • TK11701M • • • • TK 11806M / Z TK11821M • • Low saturation local regulator, small surface mounting type,


    OCR Scan     		PDF TK11220-55M TK15210M OT23L-6 36kii, TK15220M 0b7b32 000270b lt 116d TK10469M TK10501M TK11701M tk10682m toko 30