FUJITSU XBAND
Abstract: No abstract text available
Text: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability 95 Drain Drain Drain 40 (Unit: µm) Drain 40 • • • • 56 DESCRIPTION The FLX257XV chip is a power GaAs FET that is
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FLX257XV
FLX257XV
FCSI0598M200
FUJITSU XBAND
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GaAs FET HEMT Chips
Abstract: FLX257XV
Text: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability 95 Drain Drain Drain 40 (Unit: µm) Drain 40 • • • • 56 DESCRIPTION Gate The FLX257XV chip is a power GaAs FET that is
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FLX257XV
FLX257XV
Symb4888
GaAs FET HEMT Chips
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GaAs FET chip
Abstract: FLX257XV Eudyna Devices
Text: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability 95 Drain Drain Drain 40 (Unit: µm) Drain 40 • • • • 56 DESCRIPTION Gate The FLX257XV chip is a power GaAs FET that is
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Original
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FLX257XV
FLX257XV
Symb4888
GaAs FET chip
Eudyna Devices
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PDF
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fujitsu gaas fet
Abstract: FLX257XV
Text: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability 95 40 (Unit: µm) Drain Drain Drain Drain 40 • • • • 56 DESCRIPTION Gate The FLX257XV chip is a power GaAs FET that is
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Original
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FLX257XV
FLX257XV
FCSI0598M200
fujitsu gaas fet
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PDF
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Untitled
Abstract: No abstract text available
Text: FLX257XV GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 33.5dBm Typ. High Gain: G -j^B = 7.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability &Bp|B|^Bp|B|^B P|B|^|b P|b P|B DESCRIPTION The FLX257XV chip is a pow er GaAs FET that is
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OCR Scan
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FLX257XV
FLX257XV
FCSI0598M200
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PDF
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