fmh20n50e
Abstract: No abstract text available
Text: FMH20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMH20N50E
fmh20n50e
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FMH23N60E
Abstract: No abstract text available
Text: FMH23N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMH23N60E
FMH23N60E
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fmh23n50
Abstract: fmh*23N50E FMH23N50E FMH23N50ES
Text: FMH23N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMH23N50ES
fmh23n50
fmh*23N50E
FMH23N50E
FMH23N50ES
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20N60S1
Abstract: FMH20N60S1 600V 20A N-Channel MOSFET TO-3P
Text: / FMH20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] φ3.2± 0.1 5±0.1 1.5±0.2 4.5±0.2 Drain D 3 ±0.2 1.5 Applications 15.5max 13 ± 0.2 10 ± 0.2
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FMH20N60S1
20N60S1
FMH20N60S1
600V 20A N-Channel MOSFET TO-3P
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fmh20n50e
Abstract: No abstract text available
Text: FMH20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMH20N50ES
fmh20n50e
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FMH28N50ES
Abstract: Schematics 5250 fmh28n50e
Text: FMH28N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMH28N50ES
FMH28N50ES
Schematics 5250
fmh28n50e
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fmh*23N50E
Abstract: FMH23N50E FMH2 FMH23N50 Schematics 5250
Text: FMH23N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMH23N50E
fmh*23N50E
FMH23N50E
FMH2
FMH23N50
Schematics 5250
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FMH28N50E
Abstract: FMH2
Text: FMH28N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMH28N50E
FMH28N50E
FMH2
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FMH21N50ES
Abstract: FMH21N50E
Text: FMH21N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMH21N50ES
FMH21N50ES
FMH21N50E
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FMH23N60E
Abstract: Schematics 5250 fmh23n60es
Text: FMH23N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMH23N60ES
FMH23N60E
Schematics 5250
fmh23n60es
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Untitled
Abstract: No abstract text available
Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E 3 TM (Emulated EEPROM)
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ST92F124/ST92F150/ST92F250
8/16-BIT
J1850
14x14
TQFP64
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W413
Abstract: No abstract text available
Text: ST72561 8-BIT MCU WITH FLASH OR ROM, 10-BIT ADC, 5 TIMERS, SPI, LINSCI , ACTIVE CAN • ■ ■ ■ ■ Memories – 16K to 60K High Density Flash HDFlash or ROM with read-out protection capability. InApplication Programming and In-Circuit Programming for HDFlash devices
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ST72561
10-BIT
64-pin
W413
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: nb 358 d
Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)
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ST92F124/ST92F150/ST92F250
8/16-BIT
J1850
TQFP64
14x14
PQFP100
14x20
TQFP100
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
nb 358 d
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SPC7011F
Abstract: spc7011 FA5695 YG952S6RP YG952S6 FA5591 yg952s6r chopper transformer winding formula SPC-701 600V-25A
Text: FA5695 Fuji Switching Power Supply Control IC Power Factor Correction FA5695 Application Note April-2011 Fuji Electric Co., Ltd. Fuji Electric Co., Ltd. AN-073E Rev.1.1 April-2011 1 / FA5695 WARNING 1. This Data Book contains the product specifications, characteristics, data, materials, and structures as of
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FA5695
April-2011
AN-073E
April-2011
1000p
TH101
2200p
600V25A
SPC7011F
spc7011
FA5695
YG952S6RP
YG952S6
FA5591
yg952s6r
chopper transformer winding formula
SPC-701
600V-25A
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20n50e
Abstract: 20N50ES
Text: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMH20N50ES
MS5F7232
H04-004-05
H04-004-03
20n50e
20N50ES
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28N50ES
Abstract: 28N50 ic MARKING QG FMH28N50ES 28N50E
Text: DATE CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMH28N50ES
MS5F7239
H04-004-05
H04-004-03
28N50ES
28N50
ic MARKING QG
FMH28N50ES
28N50E
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ST72561-Auto
Abstract: LQFP32 LQFP44 LQFP64 ST72561 128X64
Text: ST72561-Auto 8-BIT MCU FOR AUTOMOTIVE WITH FLASH OR ROM, 10-BIT ADC, 5 TIMERS, SPI, LINSCI , ACTIVE CAN • ■ ■ ■ ■ Memories – 16K to 60K High Density Flash HDFlash or ROM with read-out protection capability. InApplication Programming and In-Circuit Programming for HDFlash devices
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ST72561-Auto
10-BIT
64-pn
ST72561-Auto
LQFP32
LQFP44
LQFP64
ST72561
128X64
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TEC201
Abstract: CORE F5A MARKING D55 mcl psc-2 dap 6 Marking R192 DAP 015 ST9 Compiler
Text: ST92124xxx-Auto/ST92150xxxxx-Auto/ ST92250xxxx-Auto 8/16-bit single voltage Flash MCU family with RAM, E³ emulated EEPROM , CAN 2.0B and J1850 BLPD Datasheet − production data Features • Memories – Internal memory: Single Voltage Flash up to 256
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ST92124xxx-Auto/ST92150xxxxx-Auto/
ST92250xxxx-Auto
8/16-bit
J1850
TEC201
CORE F5A
MARKING D55
mcl psc-2
dap 6
Marking R192
DAP 015
ST9 Compiler
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: DAP7 CSTCR4M00G55A-R0 CTSR J1850 LQFP100 LQFP64 PQFP100 ST92F150JDV1 ST92F250CV2
Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)
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ST92F124/ST92F150/ST92F250
8/16-BIT
J1850
14x14
16-bit
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
DAP7
CSTCR4M00G55A-R0
CTSR
LQFP100
LQFP64
PQFP100
ST92F150JDV1
ST92F250CV2
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sm 17 35 tc bosch ac drive
Abstract: sm 17 35 tc bosch bosch sm ac drive bosch sm drive pwm 62d LQFP32 LQFP44 LQFP64 ST72561
Text: ST72561 8-bit MCU with Flash or ROM, 10-bit ADC, 5 timers, SPI, LINSCI , active CAN Features • ■ ■ ■ ■ Memories – 16K to 60K High Density Flash HDFlash or ROM with read-out protection capability. InApplication Programming and In-Circuit Programming for HDFlash devices
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ST72561
10-bit
64-pin
sm 17 35 tc bosch ac drive
sm 17 35 tc bosch
bosch sm ac drive
bosch sm drive
pwm 62d
LQFP32
LQFP44
LQFP64
ST72561
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SSOP016-P-0300-A
Abstract: SSOp016-P-0300 315HZ A1495 CXA1495M CXA1495P alps head SONY cx
Text: SONY C X A 1 4 9 5 P /M ] Recording Equalizer Amplifier for Stereo Cassette Decks_ For the availability of this product, please contact the sales ottice~n Description The CXA1495P/M is a bipolar !C developed for recording equalizer in analog cassette decks, It Is
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CXA1495P/M
CXA1495P/M
CXAM95P/M
CXA1495P
300mil
16P-01
DIP016-P-0300-A
CXA1495M
300mtl
S0P-16P-L01
SSOP016-P-0300-A
SSOp016-P-0300
315HZ
A1495
CXA1495M
alps head
SONY cx
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Untitled
Abstract: No abstract text available
Text: C X A 1 5 7 8 P /M SONY» Recording Equalizer Amplifier for Stereo Cassette Decks Description The CXA1578P/M is a bipolar IC developed for recording equalizer in analog cassette decks, it is suited specifically for double cassette decks. Buitt-in filter circuit greatly reduces the external parts
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CXA1578P/M
CXA1578P
CXA157BM
CXA1578P/M
16pin
CXA1578M
300miI
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Untitled
Abstract: No abstract text available
Text: CXA1579P/M SONY» Recording Equalizer Amplifier for Stereo Cassette Decks Description The CXA1579P/M is a bipolar IC developed for recording equalizer in analog cassette decks. It is suited specifically for double cassette decks. Built-in filter circuit greatly reduces the external parts
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CXA1579P/M
CXA1579P/M
CXA1579P
CXA1579M
300mi
OP-16P-L01
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Untitled
Abstract: No abstract text available
Text: CXA1495P/M1 SONY. Recording Equalizer Amplifier for Stereo Cassette Decks D e s c rip tio n CXA1495P 16 pin DIP Plastic The CXA1495P/M is a bipolar !C developed for recording equalizer in analog cassette decks. It is suited specifically for double cassette decks. Built-in
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CXA1495P/M1
CXA1495P
CXA1495P/M
CXA1495M
D1P-16P-01
S0P-16P-L01
P016-P-0300-A
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