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    FOR IR IGBT DIE Search Results

    FOR IR IGBT DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    FOR IR IGBT DIE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    for IR IGBT die

    Abstract: IRG7CH30K10B IRG7PH30K10 IRG7CH
    Text: PD - 97135A IRG7CH30K10B IRG7CH30K10B IGBT Die in Wafer Form Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 S short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Co-Efficient


    Original     		PDF 7135A IRG7CH30K10B IRG7CH30K10B 150mm O-247 AN-1086 for IR IGBT die IRG7PH30K10 IRG7CH

    Untitled

    Abstract: No abstract text available
    Text: PD - 97060 IRGC4065B PDP TRENCH IGBT TRENCH IGBT Die in Wafer Form 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuit in PDP Application l Low VCE on and Energy per Pulse (EPULSETM) for


    Original     		PDF O-220 IRGC4065B

    IRGC4055B

    Abstract: No abstract text available
    Text: PD - 97045A IRGC4055B PDP TRENCH IGBT TRENCH IGBT Die in Wafer Form 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuit in PDP Application l Low VCE on and Energy per Pulse (EPULSETM) for


    Original     		PDF 7045A O-220 IRGC4055B IRGC4055B

    168802

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1688-02 11 05 5SLY 12J1700 Fast-Diode Die VRRM = 1700 V IF = 150 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage


    Original     		PDF 12J1700 170lated CH-5600 168802

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1689-02 11 05 5SLY 12G1700 Fast-Diode Die VRRM = 1700 V IF = 100 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage


    Original     		PDF 12G1700 170lated CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1690-02 11 05 5SLY 12F1700 Fast-Diode Die VRRM = 1700 V IF = 75 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage


    Original     		PDF 12F1700 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1689-03 04 14 5SLY 12G1700 Fast-Diode Die VRRM = 1700 V IF = 100 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage


    Original     		PDF 12G1700 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1690-03 04 14 5SLY 12F1700 Fast-Diode Die VRRM = 1700 V IF = 75 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage


    Original     		PDF 12F1700 CH-5600

    5Sya

    Abstract: 12E17
    Text: Data Sheet, Doc. No. 5SYA 1691-02 11 05 5SLY 12E1700 Fast-Diode Die VRRM = 1700 V IF = 50 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage


    Original     		PDF 12E1700 CH-5600 12E1700 5Sya 12E17

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1688-03 04 14 5SLY 12J1700 Fast-Diode Die VRRM = 1700 V IF = 150 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage


    Original     		PDF 12J1700 CH-5600

    1691-03

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1691-03 04 14 5SLY 12E1700 Fast-Diode Die VRRM = 1700 V IF = 50 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage


    Original     		PDF 12E1700 CH-5600 1691-03

    Untitled

    Abstract: No abstract text available
    Text: VRRM = IF = 1200 V 150 A Diode-Die 5SLY 12J1200 Die size: 10 x 10 mm Doc. No. 5SYA 1684-01 Dez 12 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1


    Original     		PDF 12J1200 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRRM = IF = 1200 V 75 A Diode-Die 5SLY 12F1200 Die size: 7.4 x 7.4 mm Doc. No. 5SYA 1682-01 Dez 12 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1


    Original     		PDF 12F1200 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-01 Dez 12 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1


    Original     		PDF 12E1200 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRRM = IF = 1200 V 75 A Diode-Die 5SLY 12F1200 Die size: 7.4 x 7.4 mm Doc. No. 5SYA 1682-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1


    Original     		PDF 12F1200 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1


    Original     		PDF 12E1200 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRRM = IF = 1200 V 150 A Diode-Die 5SLY 12J1200 Die size: 10 x 10 mm Doc. No. 5SYA 1684-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter


    Original     		PDF 12J1200 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRRM = IF = 1200 V 100 A Diode-Die 5SLY 12G1200 Die size: 8.4 x 8.4 mm Doc. No. 5SYA 1683-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1


    Original     		PDF 12G1200 CH-5600

    MJ10050

    Abstract: No abstract text available
    Text: VRRM = IF = 1200 V 100 A Diode-Die 5SLY 12G1200 Die size: 8.4 x 8.4 mm Doc. No. 5SYA 1683-00 Nov 09 • • • • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1


    Original     		PDF 12G1200 CH-5600 MJ10050

    12E1200

    Abstract: No abstract text available
    Text: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-00 Nov 09 • • • • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1


    Original     		PDF 12E1200 CH-5600 12E1200

    Untitled

    Abstract: No abstract text available
    Text: VRRM = IF = 1200 V 150 A Diode-Die 5SLY 12J1200 Die size: 10 x 10 mm Doc. No. 5SYA 1684-00 Nov 09 • • • • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1


    Original     		PDF 12J1200 CH-5600

    12F1200

    Abstract: No abstract text available
    Text: VRRM = IF = 1200 V 75 A Diode-Die 5SLY 12F1200 Die size: 7.4 x 7.4 mm Doc. No. 5SYA 1682-00 Nov 09 • • • • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1


    Original     		PDF 12F1200 CH-5600 12F1200

    IGBT power loss

    Abstract: three phase air-conditioner motor inverter diode EGP 30 IR igbt gate driver ic chips diode EGP IGBT DRIVER Analog Devices IR module Split System Air Conditioner 3 phase inverter 120 conduction mode waveform COMPRESSOR PLUG
    Text: A New Low-Cost Flexible IGBT Inverter Power Module for Appliance Applications Mario Battello, Neeraj Keskar, Peter Wood, Mor Hezi, Alberto Guerra International Rectifier Appliance & Consumer Group, El Segundo CA as presented at PCIM China, March 2003 Abstract- Power modules for inverterized motor drive


    Original     		PDF AN1044 IGBT power loss three phase air-conditioner motor inverter diode EGP 30 IR igbt gate driver ic chips diode EGP IGBT DRIVER Analog Devices IR module Split System Air Conditioner 3 phase inverter 120 conduction mode waveform COMPRESSOR PLUG

    600V igbt dc to dc boost converter

    Abstract: IR mosfets IR power mosfet switching power supply welding rectifier circuit board MOSFET FOR 100khz SWITCHING APPLICATIONS IRFP450 igbts IGBT gate drive for a boost converter 3 watt smps circuit comparison of IGBT and MOSFET
    Text: INTERNATIONAL RECTIFIER CORPORATION 100 North Sepulveda Boulevard, 8th Floor, El Segundo, California 90245 Phone: 310-726-8622 Fax: 310-252-7167 WARP SpeedTM IGBTs - Fast Enough To Replace Power MOSFETs in Switching Power Supplies at over 100 kHz Chris Ambarian - Director of Switch Strategic Marketing Chesley Chao - Strategic Marketing


    Original     		PDF O-220 O-247 IRG4PC30W IRFP450) 600V igbt dc to dc boost converter IR mosfets IR power mosfet switching power supply welding rectifier circuit board MOSFET FOR 100khz SWITCHING APPLICATIONS IRFP450 igbts IGBT gate drive for a boost converter 3 watt smps circuit comparison of IGBT and MOSFET