FOR TRANSISTOR TT 2222 Search Results

FOR TRANSISTOR TT 2222 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

FOR TRANSISTOR TT 2222 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
timer 555 dil8 Abstract: ZSCT1555 astable Multivibrator 74 Text: PRECISION SINGLE CELL TIMER ZSCT1555 ISSUE 3 - JULY 2006 DEVICE DESCRIPTION These devices are precision timing circuits for generation of accurate time delays or oscillation. Advanced circuit design means that these devices can operate from a single battery	Original	ZSCT1555 timer 555 dil8 ZSCT1555 astable Multivibrator 74	PDF
APPLICATIONS OF astable multivibrator Abstract: No abstract text available Text: OBSOLETE No Recommended Replacements PRECISION SINGLE CELL TIMER ZSCT1555 ISSUE 3 - JULY 2006 DEVICE DESCRIPTION These devices are precision timing circuits for generation of accurate time delays or oscillation. Advanced circuit design means that these devices can operate from a single battery	Original		PDF
Untitled Abstract: No abstract text available Text: PRECISION SINGLE CELL TIMER ZSCT1555 ISSUE 3 - JULY 2006 DEVICE DESCRIPTION These devices are precision timing circuits for generation of accurate time delays or oscillation. Advanced circuit design means that these devices can operate from a single battery	Original	ZSCT1555	PDF
smd code HF transistor Abstract: TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN Text: Philips Semiconductors 7 1 1 DflE?b O D b ^ T ? 743 • P H I N Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability.	OCR Scan	71IDflgb BLU86 OT223 OT223 smd code HF transistor TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
transistor tt 2222 Abstract: 9 BJE 53 mj 1504 transistor BFQ42 mj 1504 BLW29 tt 2222 transistor l5 Text: • bbSBTBl OOSTSflM ÔG7 H A P X N AtlER PHILIPS/DISCRETE BLW29 b*ÎE T> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. Because o f the high gain and excellent power	OCR Scan	BLW29 BFQ42 bb531Bl 7Z77586 7Z77587 transistor tt 2222 9 BJE 53 mj 1504 transistor mj 1504 BLW29 tt 2222 transistor l5	PDF
Untitled Abstract: No abstract text available Text: Product specification Ph ilip * S em iconductors BLU86 UHF power transistor F EA T U R ES • SM D encapsulation Q U ICK R E F E R E N C E DATA R F performance at Ts S 60 “C in a common emitter dass-B test circuit see note 1 . • Emitter-ballasting resistors for	OCR Scan	BLU86 OT223 bbS333 003SlbT	PDF
transistor tt 2222 Abstract: smd 809 x transistor transistor SMD S33 Text: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures	OCR Scan	0DSfl737 BLT50 OT223 bbS3R31 0DS87M3 transistor tt 2222 smd 809 x transistor transistor SMD S33	PDF
transistor tt 2222 Abstract: transistor tt 2222 vertical TT 2222 Philips 2222 capacitor for transistor tt 2222 philips Trimmer 60 pf SOT123 Package 2322 151 51005 sot123 trimmer PT 10 Text: Philips S em iconductors m b b S B 'Ì B l Q 0 S CJ,Ì D C1 4 T 2 BBA PX Product specification VHF power MOS transistor — BLF225 • N AfIER PHILIPS/DISCRETE FEATURES b'ìE D PIN CONFIGURATION • Easy power control • Good thermal stability • Withstands full load mismatch.	OCR Scan	BLF225 OT123 MGA053 wcb17 transistor tt 2222 transistor tt 2222 vertical TT 2222 Philips 2222 capacitor for transistor tt 2222 philips Trimmer 60 pf SOT123 Package 2322 151 51005 sot123 trimmer PT 10	PDF
transistor tt 2222 Abstract: transistor tt 2222 vertical BLF241 b551a Philips 2222-581 UBB777 MBB072 2222 341 Text: Philips Semiconductors 1^53^31 4G5 IAPX HF/VHF power MOS transistor Product specification BLF241 N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Withstands full load mismatch • Gold metallization ensures	OCR Scan	bbS3T31 BLF241 MBB072' MSB009-1 7Z21747 transistor tt 2222 transistor tt 2222 vertical BLF241 b551a Philips 2222-581 UBB777 MBB072 2222 341	PDF
BLW40 Abstract: MCD205 TLO 721 Text: Philips Sem iconductors I 7 1 1 DS2 b 0 0 t>3232 3 bS ^BPHIN PHILIPS INTERNATIONAL VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. Product specification	OCR Scan	711065b 00b3535 BLW40 OT120 PINNING-SOT120 BLW40 MCD205 TLO 721	PDF
sot172 Abstract: No abstract text available Text: Philips Semiconductors 711065b 0 0 b 3D^3 'ìQ l B B P H IN product specification UHF power transistor PHILIPS BLV99/SL bSE ]> INTERNATIONAL FEATURES PIN CONFIGURATION • Emitler-baflasting resistors for an optimum temperature profile • Gold metallization ensures	OCR Scan	BLV99/SL OT172 -SOT172D MDB012 7Z94685 sot172	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bTE ]> b b s a ^ l □□2883'! 3bl I IAPX BLU45/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features	OCR Scan	BLU45/12 OT-119 BLU45/12	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b 'lE b b S B 'm » DD2flfl7b E3^ BLU97 ; v U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 470 MHz band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.	OCR Scan	BLU97 OT122A) bb53T31	PDF

BJE 42 Abstract: 9 BJE 42 Text: Philips S em iconductors bbS3R31 003010b H R Ap y Product spec if ication UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES bRE T> PIN CONFIGURATION • High power gain < • Easy power control • Gold metallization '" " “v o • Good thermal stability	OCR Scan	bbS3R31 003010b BLF542 MBA931 MRA732 MRA971 BJE 42 9 BJE 42	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bTE D • ^53*131 DDETlfl^ 40fl BLV99 APX N-P-N silicon planar epitaxial transistor primarily intended for use as a driver-stage in base stations in the 900 MHz communications band. Features: • emitter-ballasting resistors for an optimum temperature profile	OCR Scan	BLV99 OT172A1) OT172A1. bbS3T31 7Z94683 7Z94684 7Z94685 960MHz;	PDF
transistor IR 840 Abstract: TRANSISTOR RF -PT 4555 BLV193 Philips CT6 power transistor UHF POWER TRANSISTOR MRA553 MRA554 Text: Philips Semiconductors 711005b 0Qb312? 014 IPHIN Product specification BLV193 UHF power transistor PHILIPS INTERN ATI ON AL FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. DESCRIPTION	OCR Scan	711005b 0Qb312? BLV193 OT171 PINNING-SOT171 VBA451 transistor IR 840 TRANSISTOR RF -PT 4555 BLV193 Philips CT6 power transistor UHF POWER TRANSISTOR MRA553 MRA554	PDF
BFG135 power amplifier for 900Mhz Abstract: BFG135 amplifier BFG135 A amplifier bfg135 BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated	OCR Scan	BFG135 OT223 711Qfl2ti 7110fl2b BFG135 BFG135 power amplifier for 900Mhz BFG135 amplifier BFG135 A amplifier BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz	PDF
Untitled Abstract: No abstract text available Text: Philips S em iconductors D03004b M MB A P X Product specification VHF power MOS transistor BLF346 N AMER PHILIPS/DISCRETE FEATURES b^E D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures	OCR Scan	D03004b BLF346 MB8072-S MSB006 OT119 003DDS4 MBA379	PDF
transistor pr 606 j Abstract: fah1 13B1 LR38585 LZ2316AR Text: SHARP LZ2316AR BACK LZ2316AR Dual-power-supply 5 V/12 V Operation 1/3-type B/W CCD Area Sensor with 270 k Pixels DESCRIPTION The LZ2316AR is a 1/3-type (6.0 mm) solid-state image sensor that consists of PN photo-diodes and CCDs (charge-coupled devices) driven by dualpower-supply. With approximately 270 000 pixels	OCR Scan	LZ2316AR LZ2316AR transistor pr 606 j fah1 13B1 LR38585	PDF
BLF544B Abstract: 74649 Text: Product specification Philips Sem iconductors bb£3^31i 0030137 0^2 M A P X UHF push-pull power MOS transistor N AMER PHILIPS/DISCRETE BLF544B b*îE D- PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures	OCR Scan	BLF544B OT268 OT268 MCAS05 BLF544B 74649	PDF
transistor tt 2222 Abstract: ic TT 2222 BLW 89 blw89 transistor Text: PHILIPS INTERNATIONAL bSE D m 7110fl5b GübBB?'! EÔ4 PHIN BLW 89 J \ _ U.H.F. PO W ER T R A N SIS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and	OCR Scan	7110fl5b GDb33 BLW89 711002b 00b33 transistor tt 2222 ic TT 2222 BLW 89 blw89 transistor	PDF
TT 2222 Abstract: No abstract text available Text: N AMER PHIL IPS/D ISCR ETE btiS3T31 DDSTOMS STb I IAPX B LV 45/12 b'lE D V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optimum temperature profile	OCR Scan	btiS3T31 OT-119) BLV45/12 TT 2222	PDF
Untitled Abstract: No abstract text available Text: G E SOLID STATE 01 D E l 3675081 0014b43 T r r - S _ IB _ m 3 " 2 Arrays CA3127 High-Frequency N-P-N Transistor Array For Low-Power Applications at Frequencies up to 500 MHz Features:	OCR Scan	0014b43 CA3127 CA-CA3127* CA3127 100-MHz	PDF

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FOR TRANSISTOR TT 2222 Search Results

FOR TRANSISTOR TT 2222 Result Highlights (5)

FOR TRANSISTOR TT 2222 Datasheets Context Search

timer 555 dil8

APPLICATIONS OF astable multivibrator

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smd code HF transistor

2sb504

transistor tt 2222

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transistor tt 2222

transistor tt 2222

transistor tt 2222

BLW40

sot172

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BJE 42

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transistor IR 840

BFG135 power amplifier for 900Mhz

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transistor pr 606 j

BLF544B

transistor tt 2222

TT 2222

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