thickness of microstripline
Abstract: microstripline 650-001884 stripline hybrid to8 12 pins
Text: Installing TO-8 Oscillators Application Note—M022 All TO-8 thin-film oscillators are designed to operate with unconditional stability and performance equal to or better than their guaranteed specifications when installed in a properly designed 50-ohm microstripline
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Note--M022
50-ohm
thickness of microstripline
microstripline
650-001884
stripline hybrid
to8 12 pins
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ATF-36077
Abstract: ATF36077 low noise high frequency HEMT from agilent Schematics 5250 5050 led ATF pHEMT microstripline phemt biasing ATF-36077 36077 ATF 36077
Text: Low Noise Amplifier for 5.7 GHz using the ATF-36077 Low Noise PHEMT Application Note 1133 Introduction This application bulletin describes the use of the ATF36077 in a 5.7 GHz application. The ATF-36077 amplifier uses microstripline matching circuitry to obtain a low
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ATF-36077
ATF36077
5966-1277E
low noise high frequency HEMT from agilent
Schematics 5250
5050 led
ATF pHEMT
microstripline
phemt biasing ATF-36077
36077
ATF 36077
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ATF-36077
Abstract: microstripline ATF 136 low noise high frequency HEMT from agilent ATF36077 schematic 5250 schematic diagram DC amplifier 36077
Text: Low Noise Amplifier for 5.7 GHz using the ATF-36077 Low Noise PHEMT Application Note 1133 Introduction This application bulletin describes the use of the ATF-36077 in a 5.7 GHz application. The ATF-36077 amplifier uses microstripline matching circuitry to obtain a low
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ATF-36077
ATF-36077
5966-1277E
microstripline
ATF 136
low noise high frequency HEMT from agilent
ATF36077
schematic 5250
schematic diagram DC amplifier
36077
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650-001884
Abstract: No abstract text available
Text: Installing TO-8 Oscillators Application Note—M022 All TO-8 thin-film oscillators are designed to operate with unconditional stability and performance equal to or better than their guaranteed specifications when installed in a properly designed 50-ohm microstripline
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Note--M022
50-ohm
5963-3224E
650-001884
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ATF-36077
Abstract: ATF 136 Application Note 1027 hp atf36077 5.7 GHz power amplifier
Text: Low Noise Amplifier for 5.7 GHz using the ATF-36077 Low Noise PHEMT Application Note 1133 Introduction This application bulletin describes the use of the ATF-36077 in a 5.7 GHz application. The ATF-36077 amplifier uses microstripline matching circuitry to obtain a low
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ATF-36077
5966-1277E
ATF 136
Application Note 1027 hp
atf36077
5.7 GHz power amplifier
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msi 7267 MOTHERBOARD SERVICE MANUAL
Abstract: ttl cookbook msi ms 7267 MOTHERBOARD CIRCUIT diagram "0.4mm" bga "ball collapse" height PCF 799 crystal oscillator 8MHz 4 pins smd diode MARKING F5 44C smd TRANSISTOR code marking A7 terminals diagram of smd transistor bo2 cookbook for ic 555
Text: GTL/GTLP Logic High-Performance Backplane Drivers Data Book Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information
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GDFP1-F48
-146AA
GDFP1-F56
-146AB
msi 7267 MOTHERBOARD SERVICE MANUAL
ttl cookbook
msi ms 7267 MOTHERBOARD CIRCUIT diagram
"0.4mm" bga "ball collapse" height
PCF 799
crystal oscillator 8MHz 4 pins
smd diode MARKING F5 44C
smd TRANSISTOR code marking A7
terminals diagram of smd transistor bo2
cookbook for ic 555
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SOT 23 AJW
Abstract: transistor TT 3034 Resistors 2306 181 AT-32032 AT-41532 AT-41532-BLK S21E 41532 mount chip transistor 332
Text: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA
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AT-41532
OT-323
SC-70)
5965-6167E
SOT 23 AJW
transistor TT 3034
Resistors 2306 181
AT-32032
AT-41532
AT-41532-BLK
S21E
41532
mount chip transistor 332
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CGY62
Abstract: Q68000-A8787 HL 941
Text: CGY 62 GaAs MMIC Datasheet * Two-stage microwave broadband amplifier IC * 50 Ω input / output * Operating voltage range: 2.7 to 5 V * High gain and output power
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Q68000-A8787
CGY62
CGY62
Q68000-A8787
HL 941
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MGA81563
Abstract: MGA-81563 MGA-81563-BLK MGA-81563-TR1 NF50
Text: 0.1 – 6 GHz 3 V, 14 dBm Amplifier Technical Data MGA-81563 Features • +14.8 dBm P1dB at 2.0 GHz Surface Mount Package SOT-363 SC-70 +17 dBm Psat at 2.0 GHz • Single +3V Supply • 2.8 dB Noise Figure at 2.0 GHz • 12.4 dB Gain at 2.0 GHz • Ultra-miniature Package
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MGA-81563
OT-363
SC-70)
MGA-81563
5965-1328E
5965-9684E
MGA81563
MGA-81563-BLK
MGA-81563-TR1
NF50
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uPD70F3564
Abstract: V850E2/FL4-H
Text: dfgdfg Cover Data Sheet 32 V850E2/FL4-H 32-bit Single-Chip Microcontroller µPD70F3564 Renesas Electronics www.renesas.com R01DS0144ED0100 2013-05-24 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change
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V850E2/FL4-H
32-bit
PD70F3564
R01DS0144ED0100
EASE-DS-0032-1
uPD70F3564
V850E2/FL4-H
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5967-5769E
Abstract: class D power amplifier 6.78 MHz a006 INA-32063 INA-32063-BLK NF50 marking 320 SOT-363
Text: 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm P1 dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications Pin Connections and Package Marking
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INA-32063
OT-363
SC-70)
INA-32063
5965-8921E
5967-5769E
5967-5769E
class D power amplifier 6.78 MHz
a006
INA-32063-BLK
NF50
marking 320 SOT-363
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A31 SOT143
Abstract: MSA-2035 MSA2011 MSA-2011 MSA-2011-TR1 MSA2035 MSA2085 MSA-2085 MSA-2086 MSA-20XX
Text: Silicon Bipolar RFIC Amplifiers Technical Data MSA-20XX Series Features Description MSA-2011 The MSA-20XX series are high performance silicon bipolar RFIC amplifiers designed to be cascadable in 50 Ω systems. The stability factor of K > 1 contributes to easy cascading in numerous
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MSA-20XX
MSA-2011
OT-143
MSA-2035
MSA-2085
A31 SOT143
MSA-2035
MSA2011
MSA-2011
MSA-2011-TR1
MSA2035
MSA2085
MSA-2085
MSA-2086
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FERRITE TOROID
Abstract: motorola 2n2222 2N2222 TIP41 TIP41 amplifier 10 35L C5 2N2222 motorola
Text: MOTOROLA Order this document by MRA1000–3.5L/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA1000-3.5L Designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers
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MRA1000
MRA1000-3
FERRITE TOROID
motorola 2n2222
2N2222
TIP41
TIP41 amplifier
10 35L C5
2N2222 motorola
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microstripline FR4
Abstract: rogers 4403 rogers* 4403 microstripline MK322 rogers Agilent 322 transmitter agilent oc 192 frequency of FR4 5GHz of FR4
Text: Crosstalk: A Challenge Overcome in Multi-Channel Long Reach 10Gb/s+ Serial Backplanes Bodhi Das, Xilinx [email protected] Roland Moedinger, ERNI ([email protected]) 2 Outline • Crosstalk • ERNI ERmet zeroXT connector • Xilinx Virtex-II Pro X FPGA
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10Gb/s+
6100A
81134ACl
71612C
10Gb/s
microstripline FR4
rogers 4403
rogers* 4403
microstripline
MK322
rogers
Agilent 322
transmitter agilent oc 192
frequency of FR4
5GHz of FR4
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE SSE D BFQ33C is recommended for new design bbS3T31 0017633 0 • BFQ33 T '-3 /-| S ' N-P-N MICROWAVE TRANSISTOR The B FQ is an N-P-N transistor in a miniature hermetically sealed microstripline encapsulation, featuring an extremely high transition frequency of 12 GHz and very low noise.
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BFQ33C
bbS3T31
BFQ33
bbS3T31
T-37-15
7Z89164
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BFQ33
Abstract: SOT-100 BFQ33C IEC134 transistor bbs
Text: AMER PHILIPS/DISCRETE 5SE D • 0017333 G ■ B F Q 3 3 C is recommended for new design BFQ33 ^ T - S l - i g N-P-N MICROWAVE TRANSISTOR The B F Q is an N-P-N transistor in a miniature hermetically sealed microstripline encapsulation featuring an extremely high transition frequency of 12 G H z and very low noise.
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BFQ33C
BFQ33
BFQ33
SOT-100
IEC134
transistor bbs
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BFP91A
Abstract: BFP91A NPN PHILIPS BFQ23C SOT173
Text: PhilipsSemiconductors^^ gg bbSBTBl DQ31477 00^ M APX Product specification NPN 6 GHz wideband transistor BFP91A N AUER PHILIPS/DISCRETE DESCRIPTION bRE PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT173X microstripline envelopes. It features
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bbS3T31
BFP91A
OT173
OT173X
BFQ23C.
OT173.
BFP91A
BFP91A NPN PHILIPS
BFQ23C
SOT173
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MMIC SOT 143 marking CODE 77
Abstract: MARKING SOT-143 C5
Text: SIEMENS CGY 50 GaAs MMIC Datasheet * Single-stage monolithic microwave IC MMICamplifier * Cascadable 50 i2 gain block * Application range: 100 MHz to 3 GHz * IP3 30 dBm typ. @ 1.8 GHz * Gain 8.5 dB typ. @ 1.8 GHz * Low noise figure: 3.0 dB typ @ 1.8 GHz
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YPS05178
Q68000-A8370
OT-143
MMIC SOT 143 marking CODE 77
MARKING SOT-143 C5
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Untitled
Abstract: No abstract text available
Text: OèSPT SIGNAL PROCESSING TECHNOLOGIES HCMP96850 SINGLE ULTRAFAST VOLTAGE COMPARATOR FEATURES APPLICATIONS Propagation Delay of 2.4 ns typ Propagation Delay Skew <300 ps Low Offset ±3 mV Latch Control High Speed Instrumentation, ATE High Speed Timing Window Comparators
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HCMP96850
HCMP96850
AD9685
AM6685.
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HCMP96870A
Abstract: HCMP96870
Text: S P T SIGNAL PROCESSING TECHNOLOGIES H C M P 9 6 8 7 A DUAL ULTRA FAST VOLTAGE COMPARATOR FEATURES APPLICATIONS • • • • • • • • • • • • Propagation Delay <2.3 ns Propagation Delay Skew <300 ps 300 MHz Minimum Tracking Bandwidth Low Offset ±3 mV
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HCMP96870A
AM6687
AD9687.
HCMP96870
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SPT9689AIC
Abstract: FRO 021 LEA-4 SPT9687 SPT9689 SPT9689A SPT9689AIJ SPT9689AIP SPT9689B SPT9689BIC
Text: 6fi SPT SIGNAL PROCESSING TECHNOLOGIES SPT9689 DUAL ULTRAFAST VOLTAGE COMPARATOR FEATURES APPLICATIONS • • • • • • • • • • • • • • 650 ps Propagation Delay 100 ps Propagation Delay Variation 70 dB CMRR Low Feedthrough and Crosstalk
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SPT9689
SPT9689
SPT9689AIC
FRO 021
LEA-4
SPT9687
SPT9689A
SPT9689AIJ
SPT9689AIP
SPT9689B
SPT9689BIC
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DDD3040
Abstract: HCMP96870 SPT9689 SPT9689A SPT9689B
Text: SPT9689 spt DUAL ULTRA-FAST VOLTAGE COMPARATOR SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS • • • • • • • • • • • • • • • 650 ps Propagation Delay 100 ps Propagation Delay Variation 900 MHz Tracking Bandwidth 70 dB CMRR
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SPT9689
SPT9689
D3G42
DDD3040
HCMP96870
SPT9689A
SPT9689B
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY50 GaAs MMIC • • • • • • • • • • Single-stage, monolithic microwave 1C MMIC amplifier Cascadable 50 Q gain block Application range: 100 MHz to 3 GHz Third order intercept point 30 dBm typical at 1.8 GHz Gain: 8.5 dB typical at 1.8 GHz
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CGY50
EHT08131
EHT08130
|
transistor 45 f 122
Abstract: BFQ32C SOT173 GHz PNP transistor BFP96
Text: Product specification Philips Semiconductors 'P3/'23 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D BFQ32C 7 1 1 0 0 2 b 0 0 4 5 4 2 4 03b • P H I N PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT 173X
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BFQ32C
OT173
OT173X
BFP96.
711002b
OT173.
D0M542fl
transistor 45 f 122
BFQ32C
SOT173
GHz PNP transistor
BFP96
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