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    FQPF SERIES FQPF10N60C Search Results

    FQPF SERIES FQPF10N60C Result Highlights (5)

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    PQU650M-F-COVER Murata Manufacturing Co Ltd PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical Visit Murata Manufacturing Co Ltd
    11C90DM Rochester Electronics LLC 11C90 - Prescaler, ECL Series Visit Rochester Electronics LLC Buy
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    11C05DM/B Rochester Electronics LLC 11C05 - Prescaler, ECL Series Visit Rochester Electronics LLC Buy
    74LS384N Rochester Electronics LLC 74LS384 - Multiplier, LS Series, 8-Bit Visit Rochester Electronics LLC Buy

    FQPF SERIES FQPF10N60C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    10N60CT

    Abstract: 10N60C FQPF10N60CT FQPF Series fqpf10n60c FQPF10N60C FQPF Series FQPF 10N60 FQP10N60C
    Text: QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP10N60C FQPF10N60C FQPF10N60C FQPF10N60CT 10N60CT 10N60C FQPF Series fqpf10n60c FQPF Series FQPF 10N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features Description • 9A, 600V, RDS on = 0.8Ω @VGS = 10 V • Low gate charge ( typical 44 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		FQP10N60CF FQPF10N60CF FQPF10N60CF PDF

    FQPF Series

    Abstract: FQP10N60C
    Text: QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V • Low gate charge ( typical 44 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		FQP10N60C FQPF10N60C FQPF10N60C FQPF Series PDF

    FQPF10N60CF

    Abstract: FQP10N60C FQP10N60CF FQPF10N60C
    Text: FRFET TM FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features Description • 9A, 600V, RDS on = 0.8Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP10N60CF FQPF10N60CF FQPF10N60CF FQP10N60C FQPF10N60C PDF

    FQP10N60C

    Abstract: FQPF10N60C
    Text: TM FQP10N60C/FQPF10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQP10N60C/FQPF10N60C FQP10N60C FQPF10N60C PDF

    FQPF Series fqpf10n60c

    Abstract: FQPF10N60C FQP10N60C
    Text: QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP10N60C FQPF10N60C FQPF10N60C FQPF Series fqpf10n60c PDF

    FQPF Series fqpf10n60c

    Abstract: FQP10N60C FQPF10N60C
    Text: TM FQP10N60C/FQPF10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQP10N60C/FQPF10N60C FQPF Series fqpf10n60c FQP10N60C FQPF10N60C PDF

    FQPF Series fqpf10n60c

    Abstract: FQPF10N60C FQP10N60C
    Text: QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP10N60C FQPF10N60C FQPF Series fqpf10n60c FQPF10N60C PDF