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Text: MA4C725H Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 20m Peak Curr. Tol.2.0m Total Cap. (F)740f Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq40G Series Induct. (H)100p R(series) (Ohms)7.0 Neg Resist. Semiconductor MaterialGaAs
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MA4C725H
Freq40G
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Text: BAT30A Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandKa Test Freq40G Frequency Min. (Hz)8.0G Frequency Max. (Hz)40G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)
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BAT30A
Freq40G
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Text: MJD45H11 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V) I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MJD45H11
Freq40M
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Text: 1726-0805 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80ö V(BR)CBO (V)90 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq40M
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Text: D45H1 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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D45H1
Freq40M
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Text: 2SA1476 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)200m Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC) Maximum Operating Temp (øC)140 I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)
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2SA1476
Freq400M
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Text: SDT3424 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)9.0 Maximum Operating Temp (øC) I(CBO) Max. (A).01m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SDT3424
Freq40M
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Text: 2N6104 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)65 I(C) Max. (A)4.5 Absolute Max. Power Diss. (W)36# Minimum Operating Temp (øC)-65õ Maximum Operating Temp (øC)150þ I(CBO) Max. (A)10m¥x @V(CBO) (V) (Test Condition)30
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2N6104
Freq400M
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Text: DTL3427 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)9 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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DTL3427
Freq40M
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Text: MSP50 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500ã V(BR)CBO (V)500 I(C) Max. (A)350m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MSP50
Freq40M
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Text: 1714-0405 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40ö V(BR)CBO (V)50 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq40M
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Text: 1714-0602 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60ö V(BR)CBO (V)70 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq40M
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Text: SCA14065 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)250 I(C) Max. (A)20 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SCA14065
Freq40M
time600n
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Text: 41013 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)125 V(BR)CBO (V)160 I(C) Max. (A)20 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq40M
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Text: 1713-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)115 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1718-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180 V(BR)CBO (V)180 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq40M
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Text: 1718-0605 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60ö V(BR)CBO (V)60 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq40M
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Text: 1718-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq40M
req40M
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Text: SML3422 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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SML3422
Freq40M
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Text: 1717-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)190 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq40M
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Text: 1768-1025 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: GFT31/60 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)125m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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GFT31/60
Freq400k
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Text: 3746 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)34 I(C) Max. (A)20m Absolute Max. Power Diss. (W)80m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.65 h(FE) Max. Current gain.
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Freq40
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Text: 1711-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)190 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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