HALF ADDER 74
Abstract: half adder ttl 8 bit half adder 74 mb53030 ECL NAND IMPLEMENTATION HALF ADDER Unbuffered LFP4 LDR3
Text: * * c P September 1990 Edition 2.0 FUJITSU DATA SH EET MB53xxx FURY uSeries GaAs Gate Arrays The Fujitsu FURY gate array series incorporates Fujitsu’s 0.8-micron GaAs self-aligned gate process to produce a family of devices ideally suited to the highest performance applications. Incorporating very
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MB53xxx
D-6000
OVO-094F2
HALF ADDER 74
half adder ttl
8 bit half adder 74
mb53030
ECL NAND IMPLEMENTATION
HALF ADDER
Unbuffered
LFP4
LDR3
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FMC141401-02
Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking
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Untitled
Abstract: No abstract text available
Text: FLR026FH FUJITSU K-Band Power GaAs FETs FEATURES • High Output Power: P-|<jB = 23.0dBm Typ. • High Gain: G-j^B = 8.0dB(Typ.) • High PAE: riadd = 29%(Typ.) • Proven Reliability DESCRIPTION The FLR026FH chip is a power GaAs FET that is designed for
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FLR026FH
FLR026FH
ffxc-11
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FLR016FH
Abstract: No abstract text available
Text: FLR016FH FUJITSU K-Band Power GaAs FETs FEATURES • High Output Power: P-|<jB = 20.0dBm Typ. • High Gain: G-j^B = 8.5dB(Typ.) • High PAE: r iadd = 26%(Typ.) • Proven Reliability DESCRIPTION The FLR016FH chip is a power GaAs FET that is designed for
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FLR016FH
FLR016FH
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Fujitsu GaAs FET application note
Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
Text: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was
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fcs64
magS22
angS22
Fujitsu GaAs FET application note
atc100a
FLL810
Hp 2564
FLL810IQ-3C
IMT-2000
S03A2750N1
RFP 1026 resistor
fujitsu x band amplifiers
"15 GHz" power amplifier 41dBm
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Untitled
Abstract: No abstract text available
Text: FLC161WF FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 31.8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC161WF is a power GaAs FET that is designed for general
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FLC161WF
FLC161WF
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FLC053
Abstract: FLC053WG
Text: FLC053WG FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ b = 9.0dB(Typ.) High PAE: r iadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC053WG is a power GaAs FET that is designed for general
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FLC053WG
FLC053WG
FLC053
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Untitled
Abstract: No abstract text available
Text: FLC091WF FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 28.8dBm Typ. High Gain: G ^ b = 8.5dB(Typ.) High PAE: riadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC091WF is a power GaAs FET that is designed for general
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FLC091WF
FLC091WF
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Untitled
Abstract: No abstract text available
Text: F LC103 WG FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: r iadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC103WG is a power GaAs FET that is designed for general
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LC103
FLC103WG
FLC103WG
UJ11i
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Untitled
Abstract: No abstract text available
Text: FLC311MG-4 FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 34.8dBm Typ. High Gain: G ^ b = 9.5dB(Typ.) High PAE: r iadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC311MG-4 is a power GaAs FET that is designed for
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FLC311MG-4
FLC311MG-4
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Untitled
Abstract: No abstract text available
Text: FLK022WG FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK022WG is a power GaAs FET that is designed for general
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FLK022WG
FLK022WG
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Fujitsu GaAs FET application note
Abstract: 0-180-degree FLL1500IU-2C Fujitsu GaAs FET Amplifier uhf microwave fet symposium amplifier advantages and disadvantages FLL15
Text: APPLICATION NOTE NUMBER 014 THE POSSIBILITIES ARE INFINITE Reprint of Technical Paper Presented at Wireless Symposium 2001 High Power GaAs FET Amplifiers: Push-Pull versus Balanced Configurations Presented by Jon Shumaker FUJITSU COMPOUND SEMICONDUCTOR, INC.
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FLL1500IU-2C
Fujitsu GaAs FET application note
0-180-degree
Fujitsu GaAs FET Amplifier
uhf microwave fet
symposium
amplifier advantages and disadvantages
FLL15
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Untitled
Abstract: No abstract text available
Text: F L K l 02MH-14 FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 6.5dB(Typ.) High PAE: r iadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general
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02MH-14
FLK102MH-14
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Untitled
Abstract: No abstract text available
Text: FLK202MH-14 FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G ^ b = 6.0dB(Typ.) High PAE: r iadd = 27% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION The FLK202M H-14 is a pow er GaAs FET that is designed for general
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FLK202MH-14
FLK202M
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Untitled
Abstract: No abstract text available
Text: FLM1414-2 co FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 33.5dBm Typ. • High Gain: G ^ b = 5.0dB (Typ.) • High PAE: riadd = 24% (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed
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FLM1414-2
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FLM5359-8C
Abstract: flm5
Text: FLM5359-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM5359-8C
39dBm
FLM5359-8C
flm5
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FLM0910-4C
Abstract: No abstract text available
Text: FLM0910-4C FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 36dBm Typ. • High Gain: G ^ b = 7.5dB (Typ.) • High PAE: riadd = 30% (Typ.) • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed
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FLM0910-4C
36dBm
0910-4C
FLM0910-4C
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FLM09I0-2
Abstract: No abstract text available
Text: FLM0910-2 FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 33.5dBm Typ. • High Gain: G ^ b = 7.5dB (Typ.) • High PAE: riadd = 31% (Typ.) • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed
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FLM0910-2
FLM09I0-2
FLM09I0-2
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FLM1414-8C
Abstract: No abstract text available
Text: FLM1414-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 38.5dBm Typ. • High Gain: G ^ b = 5.0dB (Typ.) • High PAE: riadd = 19% (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed
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FLM1414-8C
FLM1414-8C
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FLM7177-8C
Abstract: No abstract text available
Text: FLM7177-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM7177-8C
39dBm
7177-8C
FLM7177-8C
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FLM4450-8C
Abstract: FLM4450-4C
Text: FLM4450-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 10dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM4450-8C
39dBm
FLM4450-4C
FLM4450-8C
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Untitled
Abstract: No abstract text available
Text: FLM0910-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed
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FLM0910-8C
FLM0910-8C
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FUJITSU MICROWAVE TRANSISTOR
Abstract: FLL1500IU-2C Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B IMT-2000 push pull class AB RF linear L band stub tuner matching
Text: FUJITSU APPLICATION NOTE - No 009 150-W, 2.11- 2.17 GHz Push-Pull Compact Amplifier For IMT-2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and
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IMT-2000
FLL1500IU-2C
440mA
FUJITSU MICROWAVE TRANSISTOR
Fujitsu GaAs FET application note
push pull class AB RF linear 1.3 GHz
FLL1500
class A push pull power amplifier 150w
4433B
push pull class AB RF linear L band
stub tuner matching
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Untitled
Abstract: No abstract text available
Text: FLM7785-4C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM7785-4C
36dBm
FLM7785-4C
FLM7177-18DA
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