TRANSISTOR SMD MARKING g1
Abstract: CMBT5551 smd transistor g1
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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ISO/TS16949
OT-23
CMBT5551
C-120
TRANSISTOR SMD MARKING g1
CMBT5551
smd transistor g1
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
CMBT5551
C-120
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TRANSISTOR SMD MARKING g1
Abstract: SMD TRANSISTOR G1 g1 smd transistor smd transistor t A1 sot-23 npn ts 4141 TRANSISTOR smd cmbt5551 MARKING SMD TRANSISTOR P smd transistor 304 smd transistor marking g1 TRANSISTOR SMD g1
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT5551
C-120
TRANSISTOR SMD MARKING g1
SMD TRANSISTOR G1
g1 smd transistor
smd transistor t A1 sot-23 npn
ts 4141 TRANSISTOR smd
cmbt5551
MARKING SMD TRANSISTOR P
smd transistor 304
smd transistor marking g1
TRANSISTOR SMD g1
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT5551
C-120
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PDF
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BSK313P
Abstract: No abstract text available
Text: BSK313P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -30 V RDS on 80 mΩ ID • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1 2 7
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BSK313P
SIS00070
Q67042-S4062
BSK313P
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diode smd code 57A
Abstract: smd diode 57A BSO207P
Text: BSO207P OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -20 V RDS on 45 mΩ ID • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1
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BSO207P
SIS00070
Q67042-S4068
diode smd code 57A
smd diode 57A
BSO207P
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PDF
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BSO211P
Abstract: No abstract text available
Text: BSO211P OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -20 V RDS on 67 mΩ ID • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1
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BSO211P
SIS00070
Q67042-S4064
BSO211P
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PDF
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BSO303P
Abstract: No abstract text available
Text: BSO303P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -30 V RDS on 21 mΩ ID • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1 2 7
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BSO303P
SIS00070
Q67042-S4010
BSO303P
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PDF
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Q67042-S4010
Abstract: smd diode 77a
Text: BSO303P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -30 V RDS on 22 mΩ ID • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1 2 7
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BSO303P
SIS00070
Q67042-S4010
Q67042-S4010
smd diode 77a
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PDF
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66a smd
Abstract: smd diode S2 64a A E 82A BSO203P
Text: BSO203P OptiMOS-P Small-Signal-Transistor Product Summary Feature • P-Channel • Enhancement mode VDS -20 V RDS on 21 mΩ ID • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1 2 7 D1
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BSO203P
SIS00070
Q67042-S4072
66a smd
smd diode S2 64a
A E 82A
BSO203P
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PDF
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BSO303P
Abstract: Q67042-S4010
Text: BSO303P OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -30 V RDS on 21 mΩ ID • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2
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BSO303P
SIS00070
Q67042-S4010
20angerous
BSO303P
Q67042-S4010
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PDF
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BSO211P
Abstract: No abstract text available
Text: BSO211P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO211P P-SO 8 V RDS on 67 mΩ -4.7 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View
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BSO211P
SIS00070
BSO211P
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PDF
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BSO207P
Abstract: No abstract text available
Text: BSO207P TM OptiMOS -P Power-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO207P P-SO 8 V RDS on 45 mΩ -5.7 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View
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BSO207P
SIS00070
BSO207P
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PDF
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BSO303P
Abstract: No abstract text available
Text: BSO303P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO303P P-SO 8 V RDS on 21 mΩ -8.2 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View
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BSO303P
SIS00070
BSO303P
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PDF
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BSO207P
Abstract: No abstract text available
Text: BSO207P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO207P P-SO 8 V RDS on 45 mΩ -5.7 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View
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BSO207P
SIS00070
BSO207P
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smd transistor g1
Abstract: g1 smd transistor smd transistor S1 mosfet vgs 5v smd diode S2 g1 smd diode MOSFET TSSOP-8 dual n-channel smd transistor 7a G1 C smd MOSFET TSSOP-8
Text: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor KO8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)
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KO8822
00A/s
smd transistor g1
g1 smd transistor
smd transistor S1
mosfet vgs 5v
smd diode S2
g1 smd diode
MOSFET TSSOP-8 dual n-channel
smd transistor 7a
G1 C smd
MOSFET TSSOP-8
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TRANSISTOR SMD MARKING g1
Abstract: smd transistor g1 ff 0401 transistor g1 smd TRANSISTOR marking G1 sot-23 G1 SOT-23 G1 TRANSISTOR ff 0401 smd transistor marking g1 BFS20
Text: Transistors SMD Type NPN Medium Frequency Transistor KFS20 BFS20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 25 mA) 0.4 3 Features 1 Very low feedback capacitance (typ. 350 fF). 0.55 Low voltage (max. 20 V) 2 +0.1
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KFS20
BFS20)
OT-23
TRANSISTOR SMD MARKING g1
smd transistor g1
ff 0401 transistor
g1 smd TRANSISTOR
marking G1 sot-23
G1 SOT-23
G1 TRANSISTOR
ff 0401
smd transistor marking g1
BFS20
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Untitled
Abstract: No abstract text available
Text: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor SI8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)
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SI8822
30VGS
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ME3587-G
Abstract: No abstract text available
Text: SMD Type MOSFET Field Effect Transistor KE3587-G ME3587-G ( SOT-23-6 ) • Features Unit: mm ● RDS(ON) ＜0.045Ω @VGS=4.5V ● RDS(ON) ＜0.068Ω @VGS=2.5V ● RDS(ON) ＜0.12Ω @VGS=1.8V D1 ０．３ｍｉｎ ● N-channel:VDS=20V ID=4A D2 S1 ● P-channel:VDS=-20V ID=-2A
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KE3587-G
ME3587-G)
OT-23-6
-250uA
250uA
-250uA
ME3587-G
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smd transistor marking g1
Abstract: TRANSISTOR SMD MARKING g1 smd transistor g1
Text: Transistors Transistor T SMD Type Product specification KMBT5551 MMBT5551 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Pb-Free Packages are Available 1 0.55 High Voltage Transistors +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base
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KMBT5551
MMBT5551)
OT-23
100MHz
smd transistor marking g1
TRANSISTOR SMD MARKING g1
smd transistor g1
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diode BB102
Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003G
diode BB102
RF TRANSISTOR 10GHZ low noise
Tv tuner Diagram LG RF
VCO 9GHZ 10GHZ
Transistor GaAs FET Low Noise NF 1.6dB
2SC4784F
ultra high frequency FETs or transistors
A08 smd transistor
lg tv electronic diagram
SMD TRANSISTOR fet
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PDF
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3SK238
Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003E
3SK238
g1 smd transistor
small signal audio FET
BB303
smd transistor g1
SMD Transistor 070 R
hitachi all fet audio application
hitachi DISCRETE DUAL fet
dual transistor 6 pin SMD 327
Hitachi 2SJ
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PDF
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HITACHI SMD TRANSISTORS
Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,
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ADE-A08-003E
HITACHI SMD TRANSISTORS
small signal audio FET
hitachi small signal
Tv tuner Diagram LG RF
nf transistor array
g1 smd TRANSISTOR
BB304
3SK238
BB405 equivalent
smd 015
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002PV 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 5 August 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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2N7002PV
OT666
AEC-Q101
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