G12N60D Search Results

G12N60D Price and Stock

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Rochester Electronics LLC HGTG12N60D1D UFS SERIES N-CHANNEL IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG12N60D1D	Bulk			44	1 - 10 - 100 $6.85 1000 $6.85 10000 $6.85	Buy Now
Rochester Electronics LLC HGTG12N60DID 24A, 600V, RUGGED, UFS SERIES N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG12N60DID	Bulk			88	1 - 10 - 100 $3.41 1000 $3.41 10000 $3.41	Buy Now
Harris Semiconductor HGTG12N60D1D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	HGTG12N60D1D		300			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	HGTG12N60D1D		606		1	1 $6.59 10 $6.59 100 $6.19 1000 $5.6 10000 $5.6	Buy Now
Harris Semiconductor HGTG12N60DID 24A, 600V, RUGGED, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL ULTRAFAST DIODE '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGTG12N60DID		15,378		1	1 $3.28 10 $3.28 100 $3.08 1000 $2.79 10000 $2.79	Buy Now

G12N60D Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
G12N60D1D Abstract: G12N60D1 HGTG12N60D1 AN7254 AN7260 HGTG12N60D1D Text: G12N60D1D S E M I C O N D U C T O R 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 12A, 600V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns • Low Conduction Loss	Original	PDF	HGTG12N60D1D O-247 500ns 150oC. G12N60D1D G12N60D1 HGTG12N60D1 AN7254 AN7260 HGTG12N60D1D
g12n60d1 Abstract: AN7254 AN7260 HGTP12N60D1 Text: HGTP12N60D1 S E M I C O N D U C T O R 12A, 600V N-Channel IGBT April 1995 Features Package • 12A, 600V JEDEC TO-220AB • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR FLANGE • Low Conduction Loss	Original	PDF	HGTP12N60D1 O-220AB 500ns 150oC. g12n60d1 AN7254 AN7260 HGTP12N60D1
G12N60D1 Abstract: G12N60D1D AN7254 AN7260 HGTG12N60D1D G12N60 Text: G12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 12A, 600V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns • Low Conduction Loss GATE COLLECTOR BOTTOM SIDE	Original	PDF	HGTG12N60D1D O-247 500ns 150oC. G12N60D1 G12N60D1D AN7254 AN7260 HGTG12N60D1D G12N60
g12n60d1 Abstract: AN7254 AN7260 HGTP12N60D1 G12N60D Text: HGTP12N60D1 12A, 600V N-Channel IGBT April 1995 Features Package • 12A, 600V JEDEC TO-220AB • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR FLANGE • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device	Original	PDF	HGTP12N60D1 O-220AB 500ns 150oC. g12n60d1 AN7254 AN7260 HGTP12N60D1 G12N60D
G12N60D1 Abstract: 12n60d1 28-303 A 933 S transistors Text: HGTP12N60D1 cE W s 12A, 600V N-Channel IGBT April 1995 Features Package • 12A,600V JEDEC TO-220AB • Latch Free Operation EMfTTER CO LLECTO R • Typical Fall Time <500ns GATE • High Input Impedance CO LLECTO R FLA NG E • L o w C o n d u c tio n Loss	OCR Scan	PDF	HGTP12N60D1 O-220AB 500ns G12N60D1 12n60d1 28-303 A 933 S transistors