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onsemi HGTG18N120BN IGBT 1200V 54A 390W TO247
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onsemi HGTG18N120BND IGBT 1200V 54A 390W TO247
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Harris Semiconductor HGTG18N120BND
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Fairchild Semiconductor Corporation HGTG18N120BN Electronic Component
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ComSIT USA	HGTG18N120BN		60			1 - 10 - 100 - 1000 - 10000 -	Get Quote
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G18N120BN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
G18N120BN Abstract: HGTG18N120BN HGTG18N120BND LD26 Text: G18N120BN Data Sheet December 2001 54A, 1200V, NPT Series N-Channel IGBT Features The G18N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device	Original	HGTG18N120BN HGTG18N120BN 140ns 150oC G18N120BN HGTG18N120BND LD26	PDF
HGTG18N120BN Abstract: HGTG18N120BND LD26 IGBT Transistor 1200V, 25A Text: G18N120BN Data Sheet January 2000 54A, 1200V, NPT Series N-Channel IGBT Features The G18N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device	Original	HGTG18N120BN HGTG18N120BN 140ns 150oC HGTG18N120BND LD26 IGBT Transistor 1200V, 25A	PDF
HGTG18N120BN Abstract: HGTG18N120BND LD26 Text: G18N120BN Data Sheet December 2001 54A, 1200V, NPT Series N-Channel IGBT Features The G18N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device	Original	HGTG18N120BN HGTG18N120BN 140ns 150oC HGTG18N120BND LD26	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
G18N120BN Abstract: HGTG18N120BN HGTG18N120BND LD26 transistors equivalent Text: G18N120BN Data Sheet January 2000 54A, 1200V, NPT Series N-Channel IGBT Features The G18N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device	Original	HGTG18N120BN HGTG18N120BN 140ns 150oC G18N120BN HGTG18N120BND LD26 transistors equivalent	PDF
TG18N120BN Abstract: No abstract text available Text: G18N120BN S em iconductor Data Sheet November 1998 54A, 1200V, NPT Series N-Channel IGBT Features The G18N120BN is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device	OCR Scan	HGTG18N120BN HGTG18N120BN TA49288. 1-800-4-HARR TG18N120BN	PDF