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    G20N6 Search Results

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    G20N6 Price and Stock

    onsemi NGTG20N60L2TF1G

    IGBT 600V 40A 64W TO-3PF
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    DigiKey NGTG20N60L2TF1G Tube 107 1
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    Rochester Electronics NGTG20N60L2TF1G 17,909 1
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    Flip Electronics NGTG20N60L2TF1G 30
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    Wuhan P&S NGTG20N60L2TF1G 30 1
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    Rochester Electronics LLC HGTG20N60B3

    N-CHANNEL IGBT
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    DigiKey HGTG20N60B3 Tube 84
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    onsemi HGTG20N60B3

    IGBT 600V 40A 165W TO247
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    Avnet Americas HGTG20N60B3 Tube 0 Weeks, 2 Days 233
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    Rochester Electronics HGTG20N60B3 11,700 1
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    Avnet Silica HGTG20N60B3 53 Weeks 30
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    Flip Electronics HGTG20N60B3 2,700
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    Flip Electronics HGTG20N60B3

    IGBT 600V 40A TO247-3
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    DigiKey HGTG20N60B3 Tube 200
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    onsemi HGTG20N60A4

    IGBT 600V 70A TO247-3
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    G20N6 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    G20N60B3D Fairchild Semiconductor 40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    G20N60C3 Fairchild Semiconductor 45A, 600V, UFS Series N-Channel IGBT Original PDF

    G20N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20N60 equivalent

    Abstract: 20n60c* equivalent 20n60 c equivalent 20n60 intersil 20n60c3 20N60C3R hg*20n60
    Text: [ /Title HGT G20N6 0C3R, HGTP 20N60 C3R, HGT1 S20N6 0C3RS /Subject (40A, 600V, Rugged UFS Series NChannel IGBTs ) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche G20N60C3R, HGTP20N60C3R, HGT1S20N60C3RS T UCT ROD RODUC P E P T E


    Original     		PDF HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3RS G20N6 20N60 S20N6 20N60 equivalent 20n60c* equivalent 20n60 c equivalent 20n60 intersil 20n60c3 20N60C3R hg*20n60

    20N60C3DR

    Abstract: g20n60c3d 20n60c3
    Text: [ /Title HGT G20N6 0C3D R /Subject (40A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche CT ODU ODUCT R P PR TE OLE UTE OBS UBSTIT 0C3D ES N6 SIBL HGTG20 S O


    Original     		PDF HGTG20 HGTG20N60C3DR G20N6 20N60C3DR g20n60c3d 20n60c3

    IXGH20N60AU1

    Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
    Text: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient


    Original     		PDF N60U1 N60AU1 O-247 IXGH20N60U1 IXGH20N60AU1 IXGH20N60AU1 IXGH20N60U1 20N60AU1 *GH20N60AU1

    Untitled

    Abstract: No abstract text available
    Text: SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB20N60 P-TO-263-3-2 O-263AB) G20N60

    g20n60hs

    Abstract: G20N60 RY 227 Tf 227 10A SGP20N60HS 160W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGW20N60HS
    Text: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP20N60HS SGW20N60HS PG-TO-220-3-1 PG-TO-247-3 G20N60HS g20n60hs G20N60 RY 227 Tf 227 10A SGP20N60HS 160W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGW20N60HS

    g20n60

    Abstract: HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a
    Text: G20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S 150oC. 108ns 150oC g20n60 HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a

    G20N60

    Abstract: G20N60 IGBT
    Text: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP20N60 SGW20N60 PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW20N60 G20N60 G20N60 IGBT

    g20n60

    Abstract: G20N60 IGBT
    Text: SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB20N60 SGB20N60 g20n60 G20N60 IGBT

    G20N60B3D

    Abstract: G20N60B hg*20n60 Hgtg20n60
    Text: G20N60B3D S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and


    Original     		PDF HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. G20N60B3D G20N60B3D G20N60B hg*20n60 Hgtg20n60

    G20N60

    Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
    Text: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48


    Original     		PDF 24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1S IXGH24N60AU1 G20N60 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247

    g20n60

    Abstract: igbt 400V 20A PG-TO-263-3-2 SGB20N60
    Text: SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB20N60 PG-TO-263-3-2 O-263AB) G20N60 g20n60 igbt 400V 20A PG-TO-263-3-2 SGB20N60

    HG20N60B3

    Abstract: hG20N60 G20N60B3 hg20n60b3 equivalent HG20N60B
    Text: HGTP20N60B3, G20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 40A, 600V at TC = 25oC The HGTP20N60B3 and the G20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a


    Original     		PDF HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 150oC. TA49050. 1-800-4-HARRIS HG20N60B3 hG20N60 G20N60B3 hg20n60b3 equivalent HG20N60B

    G20N60B3

    Abstract: G20N60 HGTG20N60B3 G20N60B HGTP20N60B3 LD26 RHRP3060 hg*20n60
    Text: HGTP20N60B3, G20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT February 1996 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = +25oC Square Switching SOA Capability Typical Fall Time - 140ns at +150oC


    Original     		PDF HGTP20N60B3, HGTG20N60B3 O-220AB 140ns 150oC O-247 HGTP20N60B3 HGTG20N60B3 1-800-4-HARRIS G20N60B3 G20N60 G20N60B LD26 RHRP3060 hg*20n60

    G20N60B3D

    Abstract: BVces HGTG20N60B3D LD26 RHRP3060 igbt 600V 45UH
    Text: S E M I C O N D U C T O R G20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package • 40A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150oC E C • Short Circuit Rated


    Original     		PDF HGTG20N60B3D O-247 140ns 150oC HGTG20N60B3D 150oC. RHRP3060 1-800-4-HARRIS G20N60B3D BVces LD26 igbt 600V 45UH

    G20N60B3

    Abstract: MOSFET 40A 600V HGTG20N60B3 HGTP20N60B3 LD26 RHRP3060 TA49050
    Text: HGTP20N60B3, G20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBTs January 1997 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . . . . . 140ns at 150oC


    Original     		PDF HGTP20N60B3, HGTG20N60B3 O-220AB 140ns 150oC O-247 HGTP20N60B3 HGTG20N60B3 1-800-4-HARRIS G20N60B3 MOSFET 40A 600V LD26 RHRP3060 TA49050

    g20n60

    Abstract: G20N60 IGBT
    Text: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP20N60 SGW20N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW20N60 g20n60 G20N60 IGBT

    G20N60

    Abstract: G20N60 IGBT
    Text: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP20N60 SGW20N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW20N60 G20N60 G20N60 IGBT

    Untitled

    Abstract: No abstract text available
    Text: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP20N60HS SGW20N60HS PG-TO-220-3-1 PG-TO-247-3-21 G20N60HS PG-TO-220-3-1

    G20N60

    Abstract: No abstract text available
    Text: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP20N60 SGW20N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW20N60 G20N60

    g20n60

    Abstract: G20N60 IGBT
    Text: SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB20N60 P-TO-263-3-2 O-263AB) SGB20N60 g20n60 G20N60 IGBT

    931 diode smd

    Abstract: g20n60
    Text: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient


    OCR Scan     		PDF 24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1 IXGH24N60AU1S 4bflb22t. 931 diode smd g20n60

    HG20N60B3

    Abstract: hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d HGTG20N60B3 G20N60B
    Text: interrii HGT1S20N60B3S, HGTP20N60B3, G20N60B3 J a n u a ry . m Data Sheet 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the G20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs


    OCR Scan     		PDF HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 HG20N60B3 hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d G20N60B

    relay 12v 1c/o

    Abstract: 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178 HGTG20N60C3
    Text: G20N60C3, HGTP20N60C3, HGT1S20N60C3S in t e r r ii J a n u a ry . m Data Sheet 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    OCR Scan     		PDF TA49178. HGTG20N60C3 O-247 G20N60C3 relay 12v 1c/o 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178

    G20N60B3D

    Abstract: TA49016 G20N60B3 transistor C110 C110 HGTG20N60B3D LD26 RHRP3060 hgtg20n
    Text: G20N60B3D interrii J a n u a ry . m D ata S h eet 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G20N60B3D is a MOS gated high voltage switching device com bining the best features of MOSFETs and bipolar transistors. The device has the high input


    OCR Scan     		PDF HGTG20N60B3D HGTG20N60B3D RHRP3060. TA49016. G20N60B3D TA49016 G20N60B3 transistor C110 C110 LD26 RHRP3060 hgtg20n