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    G40N60C3 Search Results

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    G40N60C3 Price and Stock

    Rochester Electronics LLC HGTG40N60C3

    75A, 600V, N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTG40N60C3 Bulk 50
    • 1 -
    • 10 -
    • 100 $6.07
    • 1000 $6.07
    • 10000 $6.07
    Buy Now

    Rochester Electronics LLC HGTG40N60C3R

    75A, 600V N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTG40N60C3R Bulk 45
    • 1 -
    • 10 -
    • 100 $8.38
    • 1000 $8.38
    • 10000 $8.38
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    Fairchild Semiconductor Corporation HGTG40N60C3

    HGTG40N60 - N-Channel IGBT 75A, 600V, UFS SERIES '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTG40N60C3 89 1
    • 1 $5.84
    • 10 $5.84
    • 100 $5.49
    • 1000 $4.96
    • 10000 $4.96
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    Harris Semiconductor HGTG40N60C3

    HGTG40N60 - N-Channel IGBT 75A, 600V, UFS SERIES '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTG40N60C3 40 1
    • 1 $5.84
    • 10 $5.84
    • 100 $5.49
    • 1000 $4.96
    • 10000 $4.96
    Buy Now

    Harris Semiconductor HGTG40N60C3R

    75A, 600V, RUGGED, UFS SERIES N-Channel IGBT '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTG40N60C3R 45 1
    • 1 $8.06
    • 10 $8.06
    • 100 $7.58
    • 1000 $6.85
    • 10000 $6.85
    Buy Now

    G40N60C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G40N60

    Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3
    Text: G40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original
    PDF HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 LD26 RHRP3060 g40n60c3

    G40N60

    Abstract: g40n60c3d HGT1Y40N60C3D HGTG40N60C3 RHRP3060 TA49063 TA49389
    Text: HGT1Y40N60C3D Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original
    PDF HGT1Y40N60C3D HGT1Y40N60C3D 150oC. TA49273. TA49063. 100ns 150oC G40N60 g40n60c3d HGTG40N60C3 RHRP3060 TA49063 TA49389

    G40N60

    Abstract: g40n60c3 HGTG40N60C3 LD26 RHRP3060 g40n
    Text: G40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original
    PDF HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 g40n60c3 LD26 RHRP3060 g40n

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original
    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    G40N60

    Abstract: g40n60c3 HGTG40N60C3 ge 047 TRANSISTOR LD26 RHRP3060 TA49273
    Text: G40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original
    PDF HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 g40n60c3 ge 047 TRANSISTOR LD26 RHRP3060 TA49273