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    GAAS FET 6 GHZ DW Search Results

    GAAS FET 6 GHZ DW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    F2977NEGK Renesas Electronics Corporation High Linearity Broadband SP2T 30MHz to 6GHz RF Switch Visit Renesas Electronics Corporation
    ISL71934MRTZ Renesas Electronics Corporation Radiation Tolerant 6GHz SPDT RF Switch Visit Renesas Electronics Corporation
    F2977NEGK8 Renesas Electronics Corporation High Linearity Broadband SP2T 30MHz to 6GHz RF Switch Visit Renesas Electronics Corporation
    ISL71934MRTZ-T Renesas Electronics Corporation Radiation Tolerant 6GHz SPDT RF Switch Visit Renesas Electronics Corporation
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation

    GAAS FET 6 GHZ DW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PE4304

    Abstract: PE4302 SPDT FETs Micron 15 theory on Isolation Amplifier
    Text: FEATURED APPLICATION| CMOS-Based Digital Step Attenuator Designs DSAs are an elegant, natural interface between an A/D converter and the outside world. |By Ray Baker D SAs control RF levels through a processor-friendly interface. They find homes in many RF products such as wide dynamic


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    Low Noise Amplifiers

    Abstract: MAAM22010 MAAM12022 MIL-STD-3015 03 MMIC MIL-STD-2015 MMIC code D AM50-0001 AM50-0002 M540
    Text: Application Note M540 GaAs MMIC Low Noise Amplifier SOIC-8 Platform Rev. V3 Introduction Early in 1994, M/A-COM began offering a family of plastic packaged GaAs MMIC low noise amplifiers LNAs featuring single positive supply voltage, low noise figure, high dynamic range, and low power consumption


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    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


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    PDF D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download

    Mil-Std-883 Wire Bond Pull Method 2011

    Abstract: MIL-STD-883 Method 2010 pHEMT transistor RF MESFET S parameters MESFET 0.15 phemt p-hemt TGA8310 MIL-STD-883 method 2011 GaAs 0.15 pHEMT
    Text: GaAs MMIC Space Qualification GaAs MMIC Testing TriQuint Semiconductor has advanced Lot Acceptance Testing LAT for High Reliability Applications of GaAs MMICs. A flowchart depicting the entire MMIC processing flow, including the Quality Conformance Inspection


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    laser diode spice modeling

    Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
    Text: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these


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    PDF 42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136

    heds 5310 encoder

    Abstract: heds 5310 Quadrature Encoder 333 cpr COLOR tv tube charger circuit diagrams heds 5300 encoder encoder heds 6310 schematic diagram igbt inverter welding machine HP HEDS 5300 AFBR-5715 ACPL-C87
    Text: Product Catalog 2014 Selection Guide Your Imagination, Our Innovation Sense • Illuminate • Connect What’s Inside 4 Fiber Optic Solutions for Networking 14 Optical Components for Broadband Networking and Communication Applications 8 1 Industrial Fiber Optic Components,


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    PDF AV00-0265EN heds 5310 encoder heds 5310 Quadrature Encoder 333 cpr COLOR tv tube charger circuit diagrams heds 5300 encoder encoder heds 6310 schematic diagram igbt inverter welding machine HP HEDS 5300 AFBR-5715 ACPL-C87

    DVD CD 5888

    Abstract: dvd D 5888 s 1550nm Laser Diode with butterfly pin package NX8346 PS9553 PS9317 PS9301 MAN light EDFA dwdm tosa TOSA ROsa
    Text: Opto-Electronics Devices Opto-Electronics Devices Home Page http://www.necel.com/opto/ Opto-Electronics Devices, Supporting the Global Information Network Since the dawn of time man has been fascinated by the nature of light. Only recently has he discovered light’s ability to transmit vast quantities of information.


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    PDF G0706 PX10160EJ11V0PF DVD CD 5888 dvd D 5888 s 1550nm Laser Diode with butterfly pin package NX8346 PS9553 PS9317 PS9301 MAN light EDFA dwdm tosa TOSA ROsa

    motorola 8822

    Abstract: IRL 1630 transistor 17556 17556 transistor transistor 115 h 8772 p motorola 7913 motorola 10116 100A7R5JP150X 6821 motorola MRFG35003MT1
    Text: MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


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    PDF MRFG35003MT1/D MRFG35003MT1 motorola 8822 IRL 1630 transistor 17556 17556 transistor transistor 115 h 8772 p motorola 7913 motorola 10116 100A7R5JP150X 6821 motorola MRFG35003MT1

    ATC 1184

    Abstract: A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814
    Text: MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


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    PDF MRFG35005MT1/D MRFG35005MT1 ATC 1184 A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814

    Untitled

    Abstract: No abstract text available
    Text: AMMP-5024 30kHz – 40 GHz Traveling Wave Amplifier Data Sheet Description Features Avago Technologies’ AMMP-5024 is a broadband PHEMT GaAs MMIC TWA designed for medium output power and high gain over the full 30 KHz to 40 GHz frequency range. The design employs a 9-stage, cascade-connected


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    PDF AMMP-5024 30kHz AMMP-5024 40GHz 22GHz AV02-0465EN

    8772 P

    Abstract: motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies


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    PDF MRFG35003MT1/D MRFG35003MT1 8772 P motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor

    ATC 1184

    Abstract: A113 MRFG35005MT1 tc 106-10
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies


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    PDF MRFG35005MT1/D MRFG35005MT1 ATC 1184 A113 MRFG35005MT1 tc 106-10

    DVD CD 5888

    Abstract: DVD D 5888 S optical drive pdic dvd PS9313 NX8346 1550nm Laser Diode butterfly 1550 nm CW Lasers OTDR for FTTH ps7214 DVD laser assembly
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF G0706 PX10160EJ11V0PF DVD CD 5888 DVD D 5888 S optical drive pdic dvd PS9313 NX8346 1550nm Laser Diode butterfly 1550 nm CW Lasers OTDR for FTTH ps7214 DVD laser assembly

    SHF-0289

    Abstract: SHF-0289Z amplifier shf jesd22-a104b SHF-0189 SHF-0189Z JESD22-A113C GaAS fet sot89 JESD22-A114 reliability testing report
    Text: Reliability Qualification Report SHF-xx89 - SnPb Plated SHF-xx89Z - Matte Sn, RoHS Compliant Products Qualified SHF-0189 SHF-0289 SHF-0189Z SHF-0289Z The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for


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    PDF SHF-xx89 SHF-xx89Z SHF-0189 SHF-0289 SHF-0189Z SHF-0289Z RQR-105193 SHF-xx89/SHF-xx89Z JESD22-A108B SHF-0289 SHF-0289Z amplifier shf jesd22-a104b JESD22-A113C GaAS fet sot89 JESD22-A114 reliability testing report

    bfy 40

    Abstract: STM-16 STM-64 10 gb laser diode NR8501BP NEC SEMICONDUCTOR CATALOG microwave product catalog
    Text: OPTICAL SEMICONDUCTOR DEVICES FOR FIBEROPTIC COMMUNICATIONS SELECTION GUIDE May 2001 SAFETY INFORMATION ON THIS PRODUCT NEC Corporation DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT


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    PDF P12480EJNV0SG00 bfy 40 STM-16 STM-64 10 gb laser diode NR8501BP NEC SEMICONDUCTOR CATALOG microwave product catalog

    2SK2396A

    Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The


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    PDF P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor

    gaas FET 6 GHZ Dw

    Abstract: No abstract text available
    Text: GaAs MMIC SPST FET Switch Low Loss Reflective DC-6 GHz 0 A lpha AS006L1-01, AS006L1-10, AS004L1-08, AS004L1-11 Features • Broadband D G -6 G H z ■ Available in Gull Wing 7 and 8 Lead Surface Mount Packages ■ Reflective ■ Low Loss ■ 3 ns Rise/Fall Time


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    PDF AS006L1-01, AS006L1-10, AS004L1-08, AS004L1-11 AS004L1-- 006L1-10 AS004L1-11 gaas FET 6 GHZ Dw

    K 1358 fet transistor

    Abstract: DIE CHIP 51 FET
    Text: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y j 50->| 3? • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH CHOICE OF CHIP AND ONE


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    MIL-STD-2015

    Abstract: MAAM12022 MIL-STD-3015 MAAM22010 AM 12021 AM50-0002 m540 MMIC code D AM50-0001 DCS-1800
    Text: A s fe m *A Application Note m an A M P com pany GaAs MMIC Low Noise Amplifiers SOIC-8 Platform M540 V 2.00 Introduction Early in 1994, M/A-COM began offering a family of plastic packaged GaAs MMIC low noise amplifiers LNAs featuring single positive supply voltage, low


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    PDF 1500-MHz 1900-MHz 900-MHz MIL-STD-2015 MAAM12022 MIL-STD-3015 MAAM22010 AM 12021 AM50-0002 m540 MMIC code D AM50-0001 DCS-1800

    SPF 455

    Abstract: SPF-1576 SPF 455 H 5 SPF-1676
    Text: SPF-1576, -1676 2-26 GHz Low Noise PHEMT GaAs FET Preliminary Data Features - Pseudomorphic HEMT Technology - Low Noise Figure: 0.55dB Typical at 12 GHz - High Associated Gain: 10dB Typical at 12 GHz • Low Cost Ceramic Package - Tape and Reel Packaging Available


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    PDF SPF-1576, SPF-1576 SPF 455 SPF 455 H 5 SPF-1676

    AP062

    Abstract: AM0201
    Text: ss m i PACIFIC MONOLITHICS DA TASH EET G aAs MMIC AMPLIFIERS FEATURES o o o SMALL SIZE HIGH GAIN LOW CURRENT SINGLE SUPPLY VOLTAGE o CASCADABLE o LOW NOISE AND MEDIUM POWER OPTIONS o 10 TO 30 dB GAIN BLOCKS Pacific Monolithics offers a variety of GaAs FET MMIC amplifiers in surface-mount packages for microstrip


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    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


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    PDF E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61

    AWP 06-7240-T

    Abstract: TWT RF amp mtbf
    Text: What mlWM HEWLETT PACKARD TWT Retrofit: High Power Common Carrier Features Power Amplifier Single Unit • High Reliability • Energy Efficient • FCC Type Accepted • High Channel Loading Capacity • Easy to Install • No Maintenance Required • Office Battery Powered


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    Avantek amplifier

    Abstract: Avantek amt AVANTEK transistor nomograph Avantek diode limiter AMT 4052 AWS01 Avantek apg AVANTEK solid state 290K1
    Text: AVANTEK APPLICATION NOTES A Snbddiary at HewUtt-Packard AM PLIFIERS If excessive power is applied to a transistor amplifier, the first measureable affect is almost always an increase in noise figure. A somewhat higher power will further degrade noise figure and decrease the gain of the amplifier. If the input power


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    PDF 1-800-AVANTEK Avantek amplifier Avantek amt AVANTEK transistor nomograph Avantek diode limiter AMT 4052 AWS01 Avantek apg AVANTEK solid state 290K1