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    Kyocera AVX Components 100A7R5JP150XC100

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    Kyocera AVX Components 100A7R5JP150XT

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    TTI 100A7R5JP150XT Reel 500
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    Kyocera AVX Components 100A7R5JP150XTV1K

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    Kyocera AVX Components 100A7R5JP150XT1K

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    American Technical Ceramics Corp ATC100A7R5JP150XB

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 150V, 5% +TOL, 5% -TOL, 90+/-20PPM/CEL TC, 0.0000075UF, SURFACE MOUNT, 0606 (Also Known As: 100A7R5JP150XB)
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    100A7R5JP150X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005N MRFG35005NT1 MRFG35005ANT1. MRFG35005NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35005MT1 MRFG35005NT1.

    marking 0619

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005MT1 MRFG35005MT1 marking 0619

    8772 P

    Abstract: motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies


    Original     		PDF MRFG35003MT1/D MRFG35003MT1 8772 P motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor

    RF FET TRANSISTOR 3 GHZ

    Abstract: A113 MRFG35003NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N MRFG35003NT1 RF FET TRANSISTOR 3 GHZ A113 MRFG35003NT1

    Marking Z7 Gate Driver

    Abstract: MRFG35005MT1 A113 MRFG35005NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35005MT1 MRFG35005NT1. Marking Z7 Gate Driver MRFG35005MT1 A113 MRFG35005NT1

    A113

    Abstract: MRFG35005MT1 MRFG35005NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 2, 5/2005 Gallium Arsenide PHEMT MRFG35005NT1 MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005MT1 MRFG35005NT1 MRFG35005NT1 A113 MRFG35005MT1

    ATC 1184

    Abstract: A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814
    Text: MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005MT1/D MRFG35005MT1 ATC 1184 A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814

    ma 8630

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003MT1 Rev. 2, 6/2005 Gallium Arsenide PHEMT MRFG35003NT1 MRFG35003MT1 RF Power Field Effect Transistors Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class


    Original     		PDF MRFG35003MT1 MRFG35003NT1 MRFG35003MT1 ma 8630

    A113

    Abstract: MRFG35005ANT1 MRFG35005NT1 MM 5058
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005N MRFG35005NT1 A113 MRFG35005ANT1 MRFG35005NT1 MM 5058

    Marking Z7 Gate Driver

    Abstract: A113 MRFG35003ANT1 MRFG35003NT1 transistor 8772 TC 8644
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 5, 1/2008 MRFG35003NT1 replaced by MRFG35003ANT1. MRFG35003NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N MRFG35003NT1 MRFG35003ANT1. MRFG35003NT1 Marking Z7 Gate Driver A113 MRFG35003ANT1 transistor 8772 TC 8644

    ATC 1184

    Abstract: A113 MRFG35005MT1 tc 106-10
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies


    Original     		PDF MRFG35005MT1/D MRFG35005MT1 ATC 1184 A113 MRFG35005MT1 tc 106-10

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003MT1 Rev. 3, 1/2006 Replaced by MRFG35003NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35003MT1 MRFG35003NT1.

    A1943

    Abstract: A1943 transistor
    Text: Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005MT1 A1943 A1943 transistor

    Marking Z7 Gate Driver

    Abstract: A113 MRFG35003MT1 MRFG35003NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003MT1 Rev. 3, 1/2006 Replaced by MRFG35003NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35003MT1 MRFG35003NT1. Marking Z7 Gate Driver A113 MRFG35003MT1 MRFG35003NT1

    6821 Freescale

    Abstract: transistor 17556 7682 ADC
    Text: Freescale Semiconductor Technical Data MRFG35003MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003MT1 MRFG35003MT1 6821 Freescale transistor 17556 7682 ADC

    tc 106-10

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005N MRFG35005NT1 MRFG35005N tc 106-10

    100B101

    Abstract: ma 8630
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 5, 1/2008 MRFG35003NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003NT1 MRFG35003ANT1. MRFG35003N MRFG35003NT1 MRFG35003N 100B101 ma 8630

    capacitor 609

    Abstract: Marking Z7 Gate Driver A113 MRFG35005ANT1 MRFG35005NT1 motorola marking pld-1.5 package
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005N MRFG35005NT1 MRFG35005ANT1. MRFG35005NT1 capacitor 609 Marking Z7 Gate Driver A113 MRFG35005ANT1 motorola marking pld-1.5 package

    motorola 8822

    Abstract: IRL 1630 transistor 17556 17556 transistor transistor 115 h 8772 p motorola 7913 motorola 10116 100A7R5JP150X 6821 motorola MRFG35003MT1
    Text: MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003MT1/D MRFG35003MT1 motorola 8822 IRL 1630 transistor 17556 17556 transistor transistor 115 h 8772 p motorola 7913 motorola 10116 100A7R5JP150X 6821 motorola MRFG35003MT1