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    GB8206 Search Results

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    GB8206 Price and Stock

    Rochester Electronics LLC SGB8206ANSL3G

    IGBT 390V 20A D2PAK
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    DigiKey SGB8206ANSL3G Tube 48,731 296
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    Rochester Electronics LLC SGB8206ANTF4G

    IGBT 390V 20A D2PAK
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    DigiKey SGB8206ANTF4G Bulk 41,601 296
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    Rochester Electronics LLC NGB8206ANT4G

    IGBT 390V 20A D2PAK
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    DigiKey NGB8206ANT4G Bulk 32,020 417
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    Rochester Electronics LLC SGB8206NSL3G

    IGBT D2PAK 350V 20A
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    DigiKey SGB8206NSL3G Bulk 19,200 683
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    Rochester Electronics LLC NGB8206NTF4G

    IGBT 390V 20A D2PAK
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    DigiKey NGB8206NTF4G Bulk 12,600 254
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    GB8206 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    418B-04

    Abstract: GB8206
    Text: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		NGB8206N, NGB8206AN NGB8206N/D 418B-04 GB8206 PDF

    Untitled

    Abstract: No abstract text available
    Text: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		NGB8206N, NGB8206AN NGB8206N/D PDF

    GB8206

    Abstract: NGB8206A NGB8206NG
    Text: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		NGB8206N, NGB8206AN NGB8206N/D GB8206 NGB8206A NGB8206NG PDF

    GB8206

    Abstract: No abstract text available
    Text: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		NGB8206N, NGB8206AN NGB8206N/D GB8206 PDF

    8206NG

    Abstract: GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G
    Text: GB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		NGB8206N NGB8206N/D 8206NG GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G PDF