B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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Untitled
Abstract: No abstract text available
Text: FGB20N60SFD 600 V, 20 A Field Stop IGBT Features Applications • High Current Capability • Solar Inverter, UPS, Welder, PFC • Low Saturation Voltage: VCE sat = 2.2 V @ IC = 20 A General Description • High Input Impedance • Fast Switching : EOFF = 8 uJ/A
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FGB20N60SFD
O-263AB/D2-PAK
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FGAF40N60UFTU
Abstract: No abstract text available
Text: FGAF40N60UF Ultrafast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is
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FGAF40N60UF
FGAF40N60UF
FGAF40N60UFTU
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FGA40N60UFD
Abstract: FGA40N60
Text: FGA40N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is
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FGA40N60UFD
FGA40N60UFD
FGA40N60UFDTU
FGA40N60
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Untitled
Abstract: No abstract text available
Text: FGP10N60UNDF 600 V, 10 A Short Circuit Rated IGBT Features General Description • • • • • Using advanced NPT IGBT technology, Fairchild ’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC,
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FGP10N60UNDF
FGP10N60UNDF
O-220
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0/PDP-2N-1000
Abstract: No abstract text available
Text: FGP90N30 300V, 90A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where low condution loss is essential.
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FGP90N30
O-220
FGP90N30TU
0/PDP-2N-1000
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G2N60
Abstract: G2N6 G2N60UF SGM2N60UF transistors sot-223 06a sGm2N60
Text: SGM2N60UF Ultrafast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is
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SGM2N60UF
OT-223
SGM2N60UF
SGM2N60UFTF
G2N60
G2N6
G2N60UF
transistors sot-223 06a
sGm2N60
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FGD3N60UNDF
Abstract: 600v 3a ultra fast recovery diode GENERAL SEMICONDUCTOR MARKING UJ 3a ultra fast diode UJ DIODE MARKING
Text: 600V, 3A Short Circuit Rated IGBT Applications Features • Small Industrial Inverter • • • • • General Description • Home appliance inverter-driven appplication - Air Conditioner, Refrigerator, Dish Washer, FAN and Pump Short circuit rated 10us
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FGD3N60UNDF
FGD3N60UNDF
O-252
600v 3a ultra fast recovery diode
GENERAL SEMICONDUCTOR MARKING UJ
3a ultra fast diode
UJ DIODE MARKING
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GENERAL SEMICONDUCTOR MARKING UJ
Abstract: No abstract text available
Text: FGAF40N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is
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FGAF40N60UFD
FGAF40N60UFD
FGAF40N60UFDTU
GENERAL SEMICONDUCTOR MARKING UJ
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120N30
Abstract: No abstract text available
Text: FGPF120N30 300V, 120A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PWD series of IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where
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FGPF120N30
FGPF120N30
O-220F
FGPF120N30TU
120N30
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fdpf085n10a
Abstract: No abstract text available
Text: FDPF085N10A N-Channel PowerTrench MOSFET 100 V, 40 A, 8.5 mΩ Features General Description • RDS on = 6.5 mΩ ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
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FDPF085N10A
FDPF085N10A
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fgh30s
Abstract: No abstract text available
Text: FGH30S130P 1300 V, 30 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching
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FGH30S130P
fgh30s
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Untitled
Abstract: No abstract text available
Text: FGA20S140P 1400 V, 20 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching
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FGA20S140P
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Untitled
Abstract: No abstract text available
Text: FGA30S120P 1200 V, 30 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode Trench IGBTs offer superior conduction and switching performances for soft switching
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FGA30S120P
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Untitled
Abstract: No abstract text available
Text: FGA25S125P 1250 V, 25 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching
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FGA25S125P
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Untitled
Abstract: No abstract text available
Text: FGA15S125P 1250 V, 15 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications.
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FGA15S125P
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FGD4536
Abstract: FGD4536TM fgd453
Text: FGD4536 360 V PDP Trench IGBT Features General Description • High Current Capability Using novel trench IGBT technology, Fairchild ’s new series of trench IGBTs offer the optimum performance for consumer appliances and PDP TV applications where low conduction and
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FGD4536
FGD4536
O-252/D-PAK
FGD4536TM
fgd453
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Ss 8210
Abstract: 045 83.2 TI YEAR OF MANUFACTURE toshiba ta 8210
Text: TPC 8210 T O S H IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UjM O S - _ IT - N T S iT \S f t _ T PC8 2 1 0 — Unit: mm Lithium Ion Battery Applications Note Book PC Portable Equipments Applications •Low drain-source ON resistance
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2n2907 TO-92
Abstract: BC337 hie hre hfe bc337 hie c237a C714B BC337 hoe 2N3702 NATIONAL SEMICONDUCTOR C2371 C2379 hie for bc337
Text: Process National Semiconductor 3 S o -(pS 2_ 63 PNP M edium Row ^ 12. ( 2 13 2 1 Uj- D ESC R IPT IO N 3.020 Process 63 is a non-overlay, double-diffused, si I epitaxial device. Complement to Process 19. A PPLIC A T IO N This device was designed for use as general pure
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2N2905
2N2907
2N4403
2N3702
O-237:
TN2905
T0-237
2N3416
T0-92
2N3417
2n2907 TO-92
BC337 hie hre hfe
bc337 hie
c237a
C714B
BC337 hoe
2N3702 NATIONAL SEMICONDUCTOR
C2371
C2379
hie for bc337
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TLP759F
Abstract: IEC68 TLP759 VDE0109 VDE0884 TLP759F O DVE 0884
Text: TOSHIBA TLP759 D4 TOSHIBA PHOTOCOUPLER TLP759(D4) ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION : (D4) Types : TLP759, TLP759F Type designations for ‘Option : (D4)\ which are tested under VDE0884 requirements. Ex. : TLP759 (D4-0) Note : Use Toshiba standard type number for safety standard application.
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TLP759
VDE0884
TLP759,
TLP759F
TLP759
TLP759F
IEC68
VDE0109
TLP759F O
DVE 0884
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2SA1362
Abstract: A1362
Text: 2SA1362 TO SH IBA 2 S A 1 362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • • + 0.5 2.5 —0.3 High DC Current Gain : hpE —120—400 Low Saturation Voltage
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2SA1362
-400m
2SA1362
A1362
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2SA1366
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1366 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1366 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING n r +0-5 2-5 -0.3
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2SA1366
2SA1366
2SC3441.
-600mA
150MHz
SC-59
O-236
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2SC3441
Abstract: 2SA1366
Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3441 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3441 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING 2-5 -0.3 designed with high collector current, high voltage.
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2SC3441
2SC3441
2SA1366.
600mA
150MHz
SC-59
O-236
Taa25
2SA1366
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