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    GERMANIUM DIODE EQUIVALENT Search Results

    GERMANIUM DIODE EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM82DUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D Visit Toshiba Electronic Devices & Storage Corporation

    GERMANIUM DIODE EQUIVALENT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    back Tunnel diode

    Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
    Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized


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    MIL-PRF-19500 MIL-PRF-35834 back Tunnel diode mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes PDF

    back Tunnel diode

    Abstract: metal detectors circuit "back diode" point contact diode tunnel diode application
    Text: D fU M iu 'H C General Infotmation RF detection is achieved through utilization of the nonlinear, current-voltage characteristics of a semiconducting junction. Two fundamental detector diode types are used; silicon-based, Schottky barrier and germanium-based, tunnel or back diodes.


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    MBD5057

    Abstract: No abstract text available
    Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized


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    MIL-PRF-19500 MIL-PRF-35834 MBD5057 PDF

    back Tunnel diode

    Abstract: Tunnel Diode tunnel diode application
    Text: Detector Overview General Inform ation RF detection is achieved through utilization o f th e nonlinear, current-voltage characteristics o f a semiconducting junction. Two fundamental d ete cto r diode types are used; silicon-based, Schottky barrie r and germanium-based, tunnel o r back diodes.


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    4026 IC

    Abstract: CI 4016 in276 1N276 IR411 ic 4081 ci 4081
    Text: niL SPECS IC | G D D D 1 5 S □□57Bclb 1 | I INCH-PQ1JND~T MIL-S-19500/192B 6 October 1989 superseding-MIL-S-19500/192A 19 April 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N276, JAN, JANTX, ANO JANTXV This specification 1s approved for use by all Departments and


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    GDDG15S MIL-S-19500/192B MIL-S-19500/192A 1N276, MIL-S-19500. MIL-S-19500 4026 IC CI 4016 in276 1N276 IR411 ic 4081 ci 4081 PDF

    Scans-0016000

    Abstract: No abstract text available
    Text: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart­


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    00D0125 MIL-S-19500/226B MIL-S-19500/226A 1N3666U) MIL-S-19500. -55aC HIL-S-19500/226B S961-1161-1) Scans-0016000 PDF

    germanium rectifier diode

    Abstract: Germanium rectifier CV710 germanium diode CV7109 microwave mixer diode CV7108 Germanium Amplifier noise diode Germanium Mixer Diodes
    Text: GERMANIUM MICROWAVE MIXER DIODE GEM3 GEM4 C oaxial point contact germ anium diodes intended fo r u se in pretuned c en tim e tric low n o is e m ix e r c ir c u its u p to l2 G c /s . The sp re a d of adm ittance fig u re s at 12G e/s is v e ry sm a ll. GEM3 and 4 a re the com m ercial


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    12Gc/s CV7108 CV7109 SO-26 spot100 500Mc/s 10Mc/s 9375Mc/s germanium rectifier diode Germanium rectifier CV710 germanium diode microwave mixer diode Germanium Amplifier noise diode Germanium Mixer Diodes PDF

    J16-18A-R01M-HS

    Abstract: J16-8SP-R05M-HS J16-18A-R01M germanium photodiode
    Text: J ^ E G zG JU D SO N Germanium Detector Operating Notes 0.8 to 1.8 jim 'f§jjpilljf!' Biii 'viflnJP General Responsivity Operating Circuit J16 Series detectors are high-quality G erm anium photodiodes designed for the 800 to 1800 nm w avelength range. The equivalent circuit for a G erm a­


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    J16TE 3G30bGS 00D03Sb 3030b05 00GG3E7 J16-18A-R01M-HS J16-8SP-R05M-HS J16-18A-R01M germanium photodiode PDF

    lidar apd model

    Abstract: APD, laser, range, finder photodiode pin alpha particles APD bias gain C30902S geiger apd InGaAs apd photodiode Photodiode apd high sensitivity germanium diode equivalent PerkinElmer Avalanche Photodiode
    Text: !"#$%& Avalanche Photodiodes: A User's Guide Abstract Avalanche photodiode detectors have and will continue to be used in many diverse applications such as laser range finders and photon correlation studies. This paper discusses APD structures, critical performance parameters and the excess noise factor.


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    ED-13, ED-0017/03/8, C30902E/S, C30921 lidar apd model APD, laser, range, finder photodiode pin alpha particles APD bias gain C30902S geiger apd InGaAs apd photodiode Photodiode apd high sensitivity germanium diode equivalent PerkinElmer Avalanche Photodiode PDF

    sx3704

    Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
    Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are


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    ircD376 BD234 VT854, VT855â VT854* iTT44, BZX79-C24, BZX83-C24, BZX88-C24 sx3704 BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram PDF

    tunnel diodes

    Abstract: germanium diode equivalent tunnel diode germanium TUNNEL DIODE germanium diode tunnel junction diode AEY16 AEY13 AEY15 germanium diode junction capacitance
    Text: GERMANIUM T U N N EL DIODES AEYI3 AEYI5 AEYI6 TEN TA TIV E DATA Germanium tunnel diodes for use as low noise microwave am plifiers in S-band. QUICK REFERENCE DATA S-band f Operating frequency AEY13 AEY15 f min. r N s R esisitive cut-off frequency 6.0 8.0 Noise m easure


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    AEY13 AEY15 AEY16 IB88331 AEY13-Page tunnel diodes germanium diode equivalent tunnel diode germanium TUNNEL DIODE germanium diode tunnel junction diode AEY16 germanium diode junction capacitance PDF

    ua78540

    Abstract: MOTOROLA SCR TL494 PWM motor controller TL494 PWM motor tl494 equivalent scr dc motor forward reverse control application SCR scr driving circuit for dc motor MOTOROLA SCR driver EB121
    Text: ORDER THIS DOCUMENT BY EB121/D EB121 SCR IMPROVES DC MOTOR CONTROLLER EFFICIENCY SCRs are commonly associated with ac applications because of their drive simplicity and inherent self turn­ off when the anode current drops below the holding cur­ rent. However, with proper commutating techniques,


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    EB121/D EB121 ua78540 MOTOROLA SCR TL494 PWM motor controller TL494 PWM motor tl494 equivalent scr dc motor forward reverse control application SCR scr driving circuit for dc motor MOTOROLA SCR driver EB121 PDF

    Untitled

    Abstract: No abstract text available
    Text: Resolution and Accuracy of Cryogenic Temperature Measurements D. Scott Holmes and S. Scott Courts Lake Shore Cryotronics, Inc., Westerville, Ohio 43081-2399 A procedure is outlined and typical data provided for calculation of achievable resolutions and accuracies using commercially


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    J16D

    Abstract: J161 germanium diode equivalent GE PHOTODIODE J16-18A-R01M-HS J16-5SP-R03M-HS 103 SRM
    Text: E G I 8c G JUDSON 3TE D • 30BGb05 000DE13 4 *JUD ^ T -V /-V / J IO Series Germanium Detector Operating Notes General Responsivity Operating Circuit J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range.


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    30BGb05 000DE13 J16TE2 11-mission. 3030L 000D21L, J16D J161 germanium diode equivalent GE PHOTODIODE J16-18A-R01M-HS J16-5SP-R03M-HS 103 SRM PDF

    diode code m10

    Abstract: avalanche photodiodes 1650nm APD 10ghz
    Text: Detectors for Fiber Optics: InGaAs Avalanche Photodiodes 80 µm InGaAs APDs PD-LD Inc. offers low noise, high responsivity InGaAs Avalanche Photo Diodes APD’s in convenient fiber coupled packages. These assemblies incorporate front-illuminated 80 micron diameter active area


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    J16-5SP-R02M-SC

    Abstract: J16-8SP-R05M GE PHOTODIODE J16-18A-R01M-SC J16P1R10M J16-5SP-R03M-HS J16-5SP-R03M-SC judson germanium photodiode J16-8SP-R05M-SC J16-18A-R01M
    Text: E G 8c G JUDSON BTE J> J 16 Series 3CI30bD5 D0DDS13 JUD 4 T - H t - H l Germanium Detector Operating Notes General Responsivity Operating Circuit J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range.


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    3CI30bD5 D0DDS13 J16TE2 1550nm. 3G30L 000021L. J16-5SP-R02M-SC J16-8SP-R05M GE PHOTODIODE J16-18A-R01M-SC J16P1R10M J16-5SP-R03M-HS J16-5SP-R03M-SC judson germanium photodiode J16-8SP-R05M-SC J16-18A-R01M PDF

    NKT677

    Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
    Text: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers


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    AC113 AC155 AC156 AC165 AC128 AC154 AC166 AC167 AC177 AD140 NKT677 NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128 PDF

    diode 5082-2800

    Abstract: hp 5082-2800 diode Germanium Schottky diode handling of beam lead diodes 5082-2837
    Text: Whpl mi'tiM H E W LE T T PA C K A R D Beam Lead Schottky Diode Technical Data 5082-2837 Features • Fast Switching • High Breakdown • Beam Lead Equivalent of 5082-2800 • Platinum Tri-Metal System • Wide Temperature Range • SIOa Passivation Description


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    1N3716

    Abstract: diode germanium tu 38 f 1N3717 1N3714 1N3712 IN3712 diode germanium tu 38 e 1n3719 1N3715 1N3713
    Text: Germanium Power Devices Corp. 1N3712-20 1H3713-21 4 Tunnel Diodes Specifications IN3712 through 1N3720 and 1N3713 through 1N3721 are Germanium Tunnel Diodes offering peak currents of 1.0, 2.2, 4.7,10, and 22 ma. These devices, which make use of the quantum mechanical tunneling phenom­


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    1N3712-20 1H3713-21 IN3712 1N3720 1N3713 1N3721 1N37131N3721 1N3721 3S47375 000073S 1N3716 diode germanium tu 38 f 1N3717 1N3714 1N3712 diode germanium tu 38 e 1n3719 1N3715 PDF

    LA4160

    Abstract: Germanium audio Amplifier diagram germanium diode equivalent TR13 TR17 TR22 GERMANIUM DIODE diode germanium catalog 12800T audio preamplifier circuit diagram
    Text: Ordering number:ENN870D Monolithic Linear IC LA4160 Single-Chip Tape Recorder Audio System Features Package Dimensions • A single package contaning preamplifier, ALC circuit, power amplifier. • Preamplifier with high gain, and power amplifier with high gain and output.


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    ENN870D LA4160 005A-DIPtd. LA4160 Germanium audio Amplifier diagram germanium diode equivalent TR13 TR17 TR22 GERMANIUM DIODE diode germanium catalog 12800T audio preamplifier circuit diagram PDF

    back Tunnel diode

    Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
    Text: METELICS 11E CORP D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK TUNNEL DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth


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    MIL-STD-19500 -65to+ 17dBmCW MBD-1050-C19 MBD-1050-A20 MBD-1050-T80 MBD-1050-T54 MBD-1050-H20 MBD-1050-E26 MBD-205s back Tunnel diode "back diode" Germanium power DIODE tunnel MBD back diode PDF

    rca transistor manual

    Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
    Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­


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    Untitled

    Abstract: No abstract text available
    Text: bDE D • flEBSbOS D04b727 DIT « S I E G SIEMENS AKT IENGESELLSCHAF SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, T3Te Reverse Voltage (VR) Power Dissipation (PTO t )


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    D04b727 1100ction A23SbDS 0G4b72Ã PDF

    APY12

    Abstract: APY 12 Siemens photodiode visible light Germanium power K/HOP-1045
    Text: SFH 231 SIEMENS GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom • Usage: Visible Light and Near Infrared Range * High Spectral Sensitivity ■ High Reliability * Very Short Switching Time


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    1300nm, 100nA) APY12 APY 12 Siemens photodiode visible light Germanium power K/HOP-1045 PDF