Untitled
Abstract: No abstract text available
Text: MBD3057T54 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 400u Peak Curr. Tol. Total Cap. (F)600f Ip/Iv Min2.5 Vp Vv Fwd Volt @Ipeak110m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)12 Neg Resist. Semiconductor MaterialGermanium
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MBD3057T54
Ipeak110m
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back Tunnel diode
Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized
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MIL-PRF-19500
MIL-PRF-35834
back Tunnel diode
mbd1057
DATASHEET TUNNEL DIODE
MBD2057-C18
MBD3057
"tunnel diode" chip assembly
Tunnel diode
MBD1057-E28
tunnel diode application
tunnel diodes
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MSPD2018
Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800
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foc17091
MSPD2018
MZBD-9161
ZENER 15B1
msd700 package inductance
MSPD2018-H50
B20 zener diode glass
MPN7320
MZBD9161
MLP7121
15B1 zener diode
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MBD5057
Abstract: No abstract text available
Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized
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MIL-PRF-19500
MIL-PRF-35834
MBD5057
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TUNNEL DIODE
Abstract: mbd1057 MBD3057 MBD2057 MBD-1057 Characteristics curve of diode TUNNEL DIODE spice model "tunnel diode" diode tunnel tunnel
Text: 1 Spice Model for Metelics Tunnel Diode Spice does not contain a model for the Tunnel Diode. To correct this omission, use the macromodel shown below. Anode 1 C1 G1 Cathode (2) G1 models the reverse and forward bias IV curve. The model does not accurately represent the negative
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MBD1057
MBD1057
3E-12
7203328E-5
MBD2057
MBD3057
MBD4057
MBD5057
TUNNEL DIODE
MBD-1057
Characteristics curve of diode
TUNNEL DIODE spice model
"tunnel diode"
diode tunnel
tunnel
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Tunnel diode
Abstract: MBD1057 DATASHEET TUNNEL DIODE "tunnel diode" MBD3057 TUNNEL DIODE spice model Characteristics curve of diode MBD2057 switch diode tunnel MBD-1057
Text: Spice Model for Metelics Tunnel Diode 1 Spice does not contain a model for the Tunnel Diode. To correct this omission, use the macromodel shown below. E1, R1, D2 and G1 model the reverse bias curve and the forward bias curve through the valley. D1 models the forward bias curve beyond the valley. The model does not accurately represent the negative differential
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MBD1057
MBD1057
3E-12
263E-6
3533E-3
688E-3
Tunnel diode
DATASHEET TUNNEL DIODE
"tunnel diode"
MBD3057
TUNNEL DIODE spice model
Characteristics curve of diode
MBD2057
switch diode tunnel
MBD-1057
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MSPD2018
Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
Text: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for
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A17084
MSPD2018
m21 sot23 transistor
MSPD1012-H50
MSPD1000-E50/E50SM
mpn7620-et47
MSPD1012-E50
mpn7610
mbd1057
MMD0840
MPN7345
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MBD3057-C18
Abstract: MBD2057-C18 MBD-1057-C18 mbd1057-c18 MBD-2057-C18 back Tunnel diode mbd 1057 MBD-3057-C18 MBD-3057-H20 "back diode"
Text: ISPMAR BACK TUNNEL DIODES Iflgl i Frequency Detector Series (To 18 GHz) metelics ID CORPORATION FEATURES • • • • • R u g g e d G e rm a n iu m P lanar Construction Excellent T e m p e ra tu re Stability N o D C Bias R eq uired W id e V id e o B andw idth
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OCR Scan
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MBD3057-C18
Abstract: MBD5057-C18 back Tunnel diode MBD-3057-C18 MIL-STD-195 MBD5057 MBD2057-C18 MBD-1057-C18 MBD1057
Text: PLANAR BACK TUNNEL DIODES m T ^ High Frequency D e te c to r Series (To 18 GHz) IB = oti^ rationS FEATURES • Rugged Germanium Planar Construction • Excellent Temperature Stability • No DC Bias Required • Wide Video Bandwidth • MIL-STD-195 00 & 883 Capability
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OCR Scan
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MIL-STD-195
MBD-1057-C18
MBD-1057-T80
MBD-1057-T54
MBD-1057-H20
MBD-1057-E26
MBD-2057-C18
MBD-2057-T80
MBD-2057-T54temperature,
MBD3057-C18
MBD5057-C18
back Tunnel diode
MBD-3057-C18
MBD5057
MBD2057-C18
MBD1057
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MBD2057-C18
Abstract: No abstract text available
Text: FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M A X IM U M RATINGS Storage Tem perature. -6 5 to +125°C Operating T e m p e ra tu re . -6 5 to +110°C
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OCR Scan
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MIL-STD-19500
MBD2057-C18
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MBD3057-C18
Abstract: MBD2057-C18 DIODE e26 back Tunnel diode MBD1057
Text: JMAR BACK TUNNEL DIODES m «|h Frequency Detector Series (To 18 GHz) U L = FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M AXIM UM RATINGS
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OCR Scan
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PDF
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MIL-STD-19500
MBD-1057-C18
MBD-1057-T80
MBD-1057-T54
MBD-1057-H20
MBD-1057-E26
MBD-2057-C18
MBD-2057-T80
MBD-2057-T54
MBD-2057-H20
MBD3057-C18
MBD2057-C18
DIODE e26
back Tunnel diode
MBD1057
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MBD3057-C18
Abstract: back Tunnel diode
Text: PLANAR BACK TUNNEL DIODES IM ” High Frequency D e te cto r Series (To 18 GHz) [ P — o f I" cc?r to iw i ? n * FEATURES • • • • • R u g g e d G e rm a n iu m P la n a r C o n s tru c tio n E x c e lle n t T e m p e ra tu re S ta b ility N o D C Bias R e q u ire d
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OCR Scan
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